CFY19-27 [INFINEON]

Transistor;
CFY19-27
型号: CFY19-27
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Transistor

文件: 总1页 (文件大小:77K)
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CFY25

GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

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16 INFINEON

CFY25

HiRel X-Band GaAs Low Noise / General Purpose MESFET

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75 INFINEON

CFY25-17

GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

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15 INFINEON

CFY25-20

GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

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20 INFINEON

CFY25-20

HiRel X-Band GaAs Low Noise / General Purpose MESFET

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20 INFINEON

CFY25-20H

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON

CFY25-20P

HiRel X-Band GaAs Low Noise / General Purpose MESFET

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16 INFINEON

CFY25-20P(SAM)

暂无描述

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0 INFINEON

CFY25-20PES

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON

CFY25-20PES

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON

CFY25-20S

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON

CFY25-23

GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

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14 INFINEON

CFY25-23

HiRel X-Band GaAs Low Noise / General Purpose MESFET

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20 INFINEON

CFY25-23ES

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON

CFY25-23H

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MICRO-X-4

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0 INFINEON