CFY67-08PH [INFINEON]
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4;型号: | CFY67-08PH |
厂家: | Infineon |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4 |
文件: | 总9页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CFY67
HiRel K-Band GaAs Super Low Noise HEMT
• HiRel Discrete and Microwave
4
1
3
2
Semiconductor
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
•
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
Package
1
2
3
4
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
-
see below
G
S
D
S
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
ES: ESA Space Quality,
Q62702F1699
(see order instructions for ordering example)
Semiconductor Group
1 of 9
Draft D, Jul. 98
CFY67
Maximum Ratings
Parameter
Symbol
VDS
VDG
VGS
ID
Values
3.5
Unit
V
Drain-source voltage
Drain-gate voltage
4.5
V
Gate-source voltage (reverse / forward)
Drain current
- 3... + 0.5
60
V
mA
mA
dBm
°C
Gate forward current
IG
2
1)
PRF,in
TJ
+ 10
150
RF Input Power, C- and X-Band
Junction temperature
Storage temperature range
Tstg
Ptot
Tsol
- 65... + 150
200
°C
2)
mW
°C
Total power dissipation
3)
230
Soldering temperature
Thermal Resistance
Junction-soldering point
Rth JS
K/W
≤ 515 (tbc.)
Notes.:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have
elapsed.
Semiconductor Group
2 of 9
Draft D, Jul. 98
CFY67
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
15
0.2
-
30
60
2.0
-
mA
V
Gate threshold voltage
VDS = 2 V, ID = 1 mA
-VGth
0.7
< 50
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
IDp
µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
-IGp
-
< 50
65
200
µA
Transconductance
gm15
-IG15
Rth JS
50
-
-
mS
µA
VDS = 2 V, ID = 15 mA
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
< 0.5
450
2
-
Thermal resistance
-
K/W
junction to soldering point
Semiconductor Group
3 of 9
Draft D, Jul. 98
CFY67
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
1)
NF
dB
Noise figure
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
-
-
-
0.5
0.7
0.9
0.6
0.8
1.0
CFY67-08, -08P
CFY67-10, 10P
1)
Ga
dB
Associated gain.
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
11.5
11.0
10.5
12.5
11.5
11.0
-
-
-
CFY67-08, -08P
CFY67-10, 10P
2)
P1dB
dBm
Output power at 1 dB gain compression
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY67-06, -08, -10
CFY67-08P, -10P
Notes.:
-
11.0
11.0
-
-
10.0
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 9
Draft D, Jul. 98
CFY67
Typical Common Source S-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG
f
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]
[dB]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
0,963
0,938
0,913
0,889
0,865
0,844
0,823
0,800
0,779
0,761 -100 4,183
0,743 -109 4,043
0,725 -117 3,906
0,708 -125 3,769
0,690 -132 3,640
0,673 -139 3,529
0,656 -146 3,427
0,640 -153 3,344
0,625 -160 3,271
0,611 -168 3,202
-15
-23
-33
-42
-52
-62
-72
-81
-91
5,315 165 0,0111 74
5,182 159 0,0225 68
5,060 150 0,0317 62
4,940 142 0,0411 57
4,824 133 0,0509 53
4,715 124 0,0585 46
4,591 115 0,0650 41
4,450 107 0,0714 36
0,655
0,639
0,625
0,611
0,596
0,582
0,567
0,552
0,534
0,520
0,500
0,490
0,477
0,467
0,455
0,442
0,430 -101
0,417 -104
0,406 -108
0,393 -113
0,381 -118
0,370 -123
0,358 -129
0,351 -134
0,343 -140
0,336 -146
0,330 -151
0,325 -156
0,320 -161
0,315 -167
0,311 -172
0,305 -177
0,301 177
0,297 172
0,294 168
0,290 165
-14
-18
-23
-28
-35
-41
-47
-53
-60
-66
-72
-77
-83
-88
-93
-97
0,40
0,39
0,42
0,43
0,43
0,45
0,47
0,50
0,52
0,54
0,58
0,60
0,63
0,67
0,71
0,76
0,79
0,84
0,87
0,91
0,94
0,96
0,98
1,01
1,03
1,06
1,09
1,11
1,13
1,14
1,16
1,18
1,19
1,19
1,18
1,17
26,8
23,6
22,0
20,8
19,8
19,1
18,5
17,9
17,5
17,1
16,8
16,4
16,1
15,9
15,6
15,4
15,3
15,1
14,9
14,8
14,7
14,6
14,5
14,4
14,3
14,3
14,2
14,1
14,1
14,0
14,0
14,0
14,0
13,9
14,0
14,0
4,319
99 0,0768 31
91 0,0811 25
83 0,0850 20
75 0,0885 15
68 0,0917 11
61 0,0942
54 0,0962
48 0,0978
41 0,0998
34 0,1010
7
3
-1
-5
-9
28 0,1027 -12
21 0,1033 -16
15 0,1044 -20
10,0 0,597 -175 3,143
10,5 0,586 177 3,089
11,0 0,576 169 3,041
11,5 0,564 161 3,002
12,0 0,554 154 2,960
12,5 0,547 146 2,923
13,0 0,536 139 2,886
13,5 0,529 131 2,848
14,0 0,522 124 2,815
14,5 0,517 116 2,787
15,0 0,510 108 2,765
15,5 0,505
16,0 0,502
16,5 0,499
17,0 0,498
17,5 0,498
18,0 0,498
8
1
-5
0,1056 -24
0,1068 -28
0,1070 -32
13,8
13,3
12,7
12,4
12,1
11,9
11,7
11,6
11,4
11,3
11,3
11,4
11,5
-12 0,1076 -36
-19 0,1076 -41
-26 0,1081 -45
-33 0,1087 -50
-40 0,1087 -55
-46 0,1093 -60
-54 0,1090 -65
-61 0,1090 -71
-68 0,1091 -77
-75 0,1097 -82
-80 0,1103 -87
-84 0,1107 -90
99
91
82
74
68
62
2,751
2,735
2,719
2,722
2,741
2,760
Semiconductor Group
5 of 9
Draft D, Jul. 98
CFY67
Typical Common Source S-Parameters (continued)
CFY67-06: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
f
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG
[GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB]
[dB]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
0,962
0,937
0,913
0,889
0,860
0,834
0,810
0,784
0,761
0,740
0,720 -107 4,586
0,701 -116 4,420
0,682 -124 4,260
0,663 -131 4,107
0,644 -139 3,974
0,627 -148 3,852
0,611 -157 3,747
0,595 -165 3,659
0,581 -173 3,571
-13
-22
-33
-41
-51
-61
-71
-80
-90
-99
6,112 166 0,0111 76
5,956 159 0,0211 69
5,810 150 0,0302 64
5,690 142 0,0394 58
5,522 133 0,0484 53
5,386 124 0,0567 48
5,236 116 0,0637 43
5,067 107 0,0702 38
0,539
0,525
0,511
0,498
0,484
0,469
0,456
0,440
0,423
0,410
0,397
0,385
0,373
0,362
0,351
0,343
0,333 -102
0,323 -107
0,313 -112
0,303 -116
0,293 -121
0,284 -127
0,274 -131
0,265 -135
0,255 -139
0,246 -143
0,235 -146
0,225 -150
0,215 -155
0,207 -159
0,200 -163
0,193 -167
0,187 -171
0,182 -175
0,177 -178
0,174 179
-15
-19
-24
-30
-36
-43
-49
-55
-61
-67
-73
-79
-84
-89
-93
-98
0,42
0,42
0,44
0,46
0,48
0,50
0,52
0,55
0,58
0,60
0,63
0,66
0,69
0,73
0,77
0,80
0,83
0,86
0,90
0,92
0,95
0,98
1,00
1,02
1,05
1,07
1,10
1,12
1,14
1,15
1,16
1,17
1,17
1,17
1,16
1,14
27,4
24,5
22,8
21,6
20,6
19,8
19,1
18,6
18,1
17,7
17,3
17,0
16,7
16,4
16,2
15,9
15,8
15,6
15,4
15,3
15,1
15,0
14,9
14,8
14,6
14,5
14,4
14,3
14,2
14,1
14,1
14,0
13,9
13,9
13,9
13,8
4,911
4,752
99 0,0760 33
91 0,0809 28
84 0,0851 24
76 0,0889 19
69 0,0918 15
62 0,0941 11
55 0,0962
49 0,0980
42 0,0995
35 0,1008
29 0,1022
7
3
-1
-5
-9
10,0 0,567 178 3,497
10,5 0,556 170 3,430
11,0 0,546 163 3,368
11,5 0,537 155 3,317
12,0 0,528 149 3,265
12,5 0,520 142 3,216
13,0 0,513 135 3,169
13,5 0,506 128 3,120
14,0 0,498 121 3,080
14,5 0,492 113 3,044
15,0 0,489 106 3,014
15,5 0,484
16,0 0,485
16,5 0,485
17,0 0,485
17,5 0,487
18,0 0,490
22 0,1039 -13
16 0,1049 -17
9
3
-4
0,1064 -21
0,1078 -26
0,1093 -30
13,8
13,3
12,9
12,5
12,2
12,0
11,8
11,6
11,5
11,4
11,4
11,5
11,6
-10 0,1105 -35
-17 0,1116 -39
-24 0,1126 -44
-30 0,1137 -49
-37 0,1151 -54
-44 0,1160 -59
-51 0,1171 -65
-58 0,1185 -71
-65 0,1197 -77
-71 0,1206 -82
-77 0,1215 -87
-81 0,1230 -90
98
91
83
75
69
64
2,990
2,967
2,945
2,947
2,961
2,979
Semiconductor Group
6 of 9
Draft D, Jul. 98
CFY67
Typical Common Source Noise-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
f
NFmin
Rn
|Γopt|
<Γopt
[GHz]
1
[dB]
0,29
0,30
0,34
0,38
0,41
0,46
0,50
0,55
0,60
0,64
0,69
0,73
0,78
0,84
0,88
0,93
0,99
1,05
[magn] [angle]
[Ω]
15,60
14,65
13,56
12,10
10,53
8,86
7,16
5,62
4,29
3,23
2,53
2,22
2,37
2,96
4,01
5,47
7,26
9,61
0,756
0,690
0,643
0,606
0,578
0,553
0,534
0,518
0,505
0,495
0,486
0,476
0,467
0,455
0,443
0,428
0,412
0,394
14
28
43
58
73
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
87
102
116
131
145
159
173
-173
-160
-146
-132
-118
-103
Semiconductor Group
7 of 9
Draft D, Jul. 98
CFY67
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl)
Noise Figure/Gain and/or Power Level
Quality Level
(ql):
Ordering Example:
Ordering Code: Q62702F1698
CFY67-08P ES
For CFY67, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 11.0 dB, P1dB > 10 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
- HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
++89 6362 4480
Fax.:
++89 6362 5568
e-mail:
Address:
martin.wimmers@siemens-scg.com
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
Semiconductor Group
8 of 9
Draft D, Jul. 98
CFY67
Micro-X Package
Published by Siemens Semiconductors, High Frequency
Products Marketing, P.O.Box 801709, D-81617 Munich.
Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per se,
not for applications, processes and circuits implemented
within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Siemens Companies and Representatives woldwide
(see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
Semiconductor Group
9 of 9
Draft D, Jul. 98
相关型号:
CFY67-08PP
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON
CFY67-10ES
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
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CFY67-10H
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
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CFY67-10PES
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
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CFY67-10PH
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
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CFY67-10PP
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
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CFY67-10PS
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON
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