CLY5 [INFINEON]
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz); 砷化镓场效应管（功率放大器为移动电话的频率从400 MHz到2.5 GHz的）
| 型号： | CLY5 |
| 厂家： | 
Infineon |
| 描述： | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
| 文件： | 总8页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs FET
CLY 5
________________________________________________________________________________________________________
D a t a s h e e t
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
* High efficiency better 55 %
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Pin Configuration
Package 1)
1
2
3
4
CLY 5
CLY 5
Q62702-L90
G
S
D
S
SOT 223
Maximum ratings
Symbol
Values
Unit
V
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
V
9
DS
DG
GS
V
V
12
V
-6
V
I
1.2
A
D
Channel temperature
Storage temperature
Pulse peak power
T
T
150
°C
°C
W
W
Ch
stg
-55...+150
P
9
2
Pulse
Total power dissipation (T < 80 °C)
s
P
tot
T : Temperature at soldering point
s
Thermal Resistance
Channel-soldering point
R
K/W
≤35
thChS
1) Dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
pg. 1/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Electrical characteristics (T = 25°C , unless otherwise specified)
A
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
I
600
800
1200
mA
DSS
V
= 3 V
V
= 0 V
DS
GS
Drain-source pinch-off current
I
-
10
5
100
20
-1.8
-
µA
µA
V
D
V
= 3 V
V
= -3.8 V
DS
GS
Gate pinch-off current
I
-
G
V
= 3 V
V
= -3.8 V
DS
GS
Pinch-off Voltage
V
-3.8
10.5
-2.8
11.0
GS(p)
V
= 3 V
I =100µA
DS
D
Small Signal Gain*)
G
dB
V
= 3 V
I
= 350 mA f = 1.8 GHz
DS
= 0 dBm
D
P
in
Small Signal Gain*)
G
11.5
9.0
12.0
9.5
27
-
-
-
-
dB
dB
V
= 5 V
I
= 350 mA f = 1.8 GHz
DS
= 0 dBm
D
P
in
Small Signal Gain **)
G
p
o
o
V
= 3 V
I
= 350 mA f = 1.8 GHz
= 350 mA f = 1.8 GHz
= 350 mA f = 1.8 GHz
DS
= 0 dBm
D
P
in
Output Power
P
P
26.5
29.5
dBm
dBm
V
= 3 V
I
DS
= 19 dBm
D
P
in
Output Power
30
V
= 5 V
I
DS
= 21 dBm
D
P
in
1dB-Compression Point
P
-
-
26.5
30
-
-
-
dBm
dBm
%
1dB
V
= 3 V
I
= 350 mA f = 1.8 GHz
DS
D
1dB-Compression Point
P
1dB
V
= 5 V
I
= 350 mA f = 1.8GHz
DS
D
Power Added Efficiency
PAE
40
55
V
= 5 V
I = 350 mA f = 1.8 GHz
DS
= 21 dBm
D
P
in
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match: Γms : MAG 0.58; ANG -143°; Load Match: Γml : MAG 0.76; ANG -116°
Siemens Aktiengesellschaft
pg. 2/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS=0.5IDSS
ηD
P1dB
Gain
P1dB
40
[dBm]
80
[%]
16
[dB]
2.0
[W]
35
30
25
70
60
50
14
12
10
1.75
1.5
1.25
20
40
8
1.0
15
10
30
20
6
4
0.75
0.5
5
0
10
0
2
0
0.25
0
[V]
7
[V]
7 8
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
Drain-Source Voltage
Drain-Source Voltage
Output Characteristics
PtotDC
0,9
0,7
VGS = 0V
VGS = -0.5V
VGS = -1V
0,5
0,3
VGS = -1.5V
VGS = -2V
0,1
0
0
1
2
3
4
5
6
Drain-Source Voltage [V]
Siemens Aktiengesellschaft
pg. 3/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
typ. Common Source S-Parameters
V
= 3 V
I = 350 mA
D
Z = 50 Ω
o
DS
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0,1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.5
1.6
1.8
2
2.2
2.4
2.5
3
3.5
4
4.5
5
5.5
6
0,98
0.96
0.93
0.9
0.87
0.81
0.77
0.73
0.71
0.7
0.69
0.68
0.69
0.7
0.71
0.72
0.74
0.76
0.78
0.8
-26,6
-39.4
-51.5
-63.1
-73.8
-93.3
-110.3
-125.3
-138.5
-150.4
-161.1
-170.8
172.1
157.3
150.5
144.1
132.2
121.4
111.5
102.5
98
11.52
11.15
10.6
10.06
9.49
8.34
7.33
6.47
5.75
5.14
4.64
4.2
3.51
2.98
2.76
2.56
2.22
1.94
1.7
1.49
1.39
1.01
0.75
0.59
0.48
0.41
0.35
0.31
160.7 0.01024
79
74.3
69.9
66.1
62.3
57
52.8
49.7
47.3
45.2
43.3
41.6
38
0.3
-171.8
-169.3
-169.2
-169.4
-169.4
-172.7
-175.6
-179.4
177.5
174.2
170.8
168.1
161.8
155.6
152.9
149.4
143.2
137
130.9
124.7
121.1
105.6
91.4
78.2
65.6
53.1
40.3
151.4
0.015
0.31
0.33
0.36
0.38
0.4
0.43
0.45
0.47
0.49
0.5
0.51
0.54
0.57
0.58
0.59
0.62
0.65
0.68
0.7
142.8 0.01942
134.9 0.02323
127.4 0.02665
114.1 0.03245
102.5 0.03711
92.4
83.5
75.2
67.6
60.5
47.2
35.1
29.2
23.6
12.6
2.1
0.04138
0.04528
0.0489
0.05271
0.05646
0.06393
0.07181
0.07569
0.07941
0.08684
0.09377
0.0998
34
32
29.7
24.8
19.7
14.6
9.4
-7.9
-17.4 0.10532
-21.9 0.1076
-42.1 0.11638
-58.1 0.12148 -17.2
-70.6 0.12571 -27.3
-82.2 0.12914 -37.2
-93.1 0.13429
-103.4 0.13892
-112.4 0.14142 -66.8
0.81
0.85
0.87
0.89
0.9
0.92
0.92
0.92
6.7
-6
0.71
0.76
0.8
0.84
0.86
0.88
0.9
79.2
64
51.4
39.8
29
18.4
8.3
-47
-57
0.91
27
Siemens Aktiengesellschaft
pg. 4/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
typ. Common Source S-Parameters
V
= 5 V
I = 350 mA
D
Z = 50 Ω
o
DS
f
S11
S21
S12
S22
GHz
MAG
ANG
-26.3
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.98
13.02
160.1 0.00906
150.7 0.01326
141.9 0.01702
133.7 0.02026
126.1 0.02304
112.4 0.02771
100.6 0.03151
90.2 0.0348
80.9 0.03798
72.4 0.04099
64.5 0.04435
57 0.04784
43 0.05543
30.1 0.06413
24 0.06865
17.9 0.07318
6.2 0.08237
79.1
73.7
69.3
65.6
61.8
57
0.15 -153.9
0.17 -148.4
0.2 -148.5
0.23 -149.9
0.26 -150.6
0.29 -155.5
0.33 -159.4
0.35 -164.1
0.37 -167.6
0.4 -171.3
0.41 -174.9
0.44 -177.8
0.47
0.51
0.54
0.55
0.6
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.5
1.6
1.8
2
2.2
2.4
2.5
3
3.5
4
4.5
5
5.5
6
0.95
0.92
0.89
0.86
0.8
0.76 -108.3
0.72 -122.9
0.7 -135.9
0.69 -147.6
0.68 -158.1
0.68 -167.7
-38.8
-50.8
-62.1
-72.6
-91.7
12.58
11.98
11.34
10.68
9.39
8.24
7.27
6.45
5.77
5.2
53.4
51.2
49.7
48.8
47.9
47.1
45.2
42.2
40.6
38.5
33.7
28.3
22.5
16.7
13.6
-0.8
4.7
0.68
0.7
175.3
160.4
153.6
147.1
135
123.9
113.7
104.3
99.7
80.1
64.4
51.5
39.6
28.8
18.1
8
3.92
3.31
3.06
2.83
2.43
2.1
1.82
1.58
1.47
1.02
0.74
0.56
0.45
0.37
175.4
168.7
165.5
161.7
154.6
147.5
140.4
133.3
129.1
111.6
95.8
0.71
0.72
0.75
0.77
0.8
0.82
0.83
0.87
0.89
0.91
0.92
0.93
0.93
0.93
-5 0.09121
0.64
0.67
0.7
-15.6 0.09917
-25.7 0.10617
-30.4 0.10916
-51.4 0.12055
-67.4 0.12631
-79.4 0.13053
-90.2 0.13384
-100 0.13894
0.72
0.78
0.83
0.86
0.88
0.91
0.92
0.92
-13.4
-24.5
-35
-45.2
-55.5
-65.6
81.3
67.9
54.9
41.7
0.31 -109.2 0.1434
0.27 -117.1 0.14538
28
Additional S-Parameter available on CD
Siemens Aktiengesellschaft
pg. 5/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Total Power Dissipation
P
tot
= f(T )
s
Ptot
3.2
[W]
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
50
100 OC
Ts
150
Permissible Pulse Load
P
/P
= f(t )
totmax totDC
p
Siemens Aktiengesellschaft
pg. 6/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
CLY5 Power GaAs-FET Matching Conditions
Definition:
Γ
Γ
Measured Data:
Typ
f
V
[V]
I
P-
1dB
[dBm]
Gain
[dB]
Γ
MAG
Γ
ANG
Γ
MAG
Γ
ml
ANG
DS
D
ms
ms
ml
[GHz]
[mA]
0.9
1.5
1.8
2.4
3
5
6
3
5
6
3
5
6
3
5
6
350
350
350
350
350
350
350
350
350
350
350
350
25.8
29.2
29.8
26.5
30.0
30.6
26.5
30.0
30.5
25.0
29.1
30.5
15.6
16.3
17.2
11.0
11.5
12.6
9.5
10.0
10.0
8.4
0.50
0.52
0.58
0.63
0.59
0.64
0.58
0.56
0.58
0.62
0.60
0.65
133
144
143
0.70
0.61
0.54
0.74
0.69
0.55
0.76
0.71
0.69
0.68
0.66
0.68
-154
-156
-168
-126
-126
-132
-116
-118
-119
-105
-105
-106
CLY5
-167
-164
-165
-143
-140
-133
-108
-109
-112
8.7
8.9
Note: Gain is small signal gain @ Γ
and Γ
ms
ml
Siemens Aktiengesellschaft
pg. 7/8
17.12.96
HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Increased Power Handling Capability Pulsed Applications
GSM/PCN TDMA-Frame:
tp
T
0.577ms
4.615ms
D =
=
= 0.125
4,615ms
577µs
P
P
tot max
totmax
Take value
from diagram permissible pulse load -->
≈ 1.4
P
P
totDC
totDC
Ptot = 2W × 1.4 = 2.8W
DECT TDMA-Frame:
10ms
tp
T
10ms
D =
=
= 0.0417
4.615ms
417µs
P
P
tot max
totmax
Take value
from diagram permissible pulse load -->
≈ 1.5
P
P
tot DC
totDC
Ptot = 2W × 1.5 = 3W
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pg. 8/8
17.12.96
HL EH PD21
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