CPU165MU [INFINEON]
IGBT SIP MODULE Ultra-Fast IGBT; IGBT模块SIP超高速IGBT
| 型号： | CPU165MU |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE Ultra-Fast IGBT |
| 文件： | 总8页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 5.029
CPU165MU
IGBT SIP MODULE
Ultra-Fast IGBT
Features
1,2
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Q1
Q2
D1
D2
4
5
6,7
9
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-1
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
33
IC @ TC = 100°C
17
ICM
100
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
100
IF @ TC = 100°C
15
IFM
100
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
2500
83
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
33
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink,flat,greased surface
1.5
2.0
—
θJC (DIODE)
θCS (MODULE)
—
°C/W
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 1
C-733
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CPU165MU
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.0
—
16
—
—
—
—
—
—
—
—
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.60
V/°C VGE = 0V, IC = 1.0mA
IC = 17A
VCE(on)
Collector-to-Emitter Saturation Voltage
1.8 2.3
VGE = 15V
2.2
1.6
—
—
—
V
IC = 33A
See Fig. 2, 5
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
24
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
—
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
6500
µA
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.3 1.7
1.2 1.5
V
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±500 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
108 140
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 27A
Qge
Qgc
td(on)
tr
17
52
23
28
21
70
—
—
nC
VCC = 400V
See Fig. 8
TJ = 25°C
ns
IC = 27A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
100 200
VGE = 15V, RG = 5.0Ω
45
140
—
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.76
0.26
—
mJ
ns
1.0 2.0
td(on)
tr
td(off)
tf
24
27
—
—
—
—
—
—
—
—
75
TJ = 150°C,
See Fig. 9, 10, 11, 18
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
Turn-Off Delay Time
Fall Time
180
130
3.7
2900
330
41
Ets
Total Switching Loss
Input Capacitance
mJ
pF
ns
A
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
50
TJ = 25°C See Fig.
105 160
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 25A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
4.5
8.0
10
15
V R = 200V
Qrr
112 375
420 1200
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
250
160
—
—
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-734
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CPU165MU
24
16
8
7.4
5.0
S
2.5
TC= 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
0
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
100
10
1000
T
= 25°C
J
100
10
1
T = 150°C
J
T
= 150°C
J
TJ = 25°C
VCC = 100V
5µs PULSE WIDTH
V
= 15V
G E
20µs P ULSE W IDTH
1
5
10
15
20
0.1
1
10
V
, Gate-to-Emitter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-735
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CPU165MU
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
V
= 15V
G E
V
= 15V
G E
80µs P ULSE W IDTH
I
I
= 54A
C
= 27A
= 14A
C
I
C
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature (°C)
TC , Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-736
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CPU165MU
7000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 480V
= 27A
CE
C
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
6000
5000
4000
3000
2000
1000
0
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
1
10
100
0
30
60
90
120
VC E , Collector-to-Emitter Voltage (V)
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
2.50
2.25
2.00
1.75
1.50
10
Ω
= 2.0
= 15V
= 480V
V
= 480V
= 15V
= 25°C
= 27A
R
V
V
CC
G E
C
G
GE
CC
V
T
I
I
I
= 54A
= 27A
C
C
C
1
I
= 14A
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20
40
60
80 100 120 140 16 0
T , Case Temperature (°C)
R G , Gate Resistance (
Ω)
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-737
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CPU165MU
6.0
1000
100
10
R
T
V
V
= 2.0 Ω
G
V
T
= 20V
= 125°C
G E
= 150°C
= 480V
= 15V
C
J
CC
G E
5.0
4.0
3.0
2.0
1.0
0.0
SAFE OPE RA TING A RE A
1
0
10
20
30
40
50
60
1
10
100
1000
I
, Collector-to-Em itter C urrent (A )
V
, C olle ctor-to-E m itter V oltage (V )
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-738
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CPU165MU
100
10
1
140
120
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 50A
F
I
= 25A
F
I
= 50A
= 25A
80
60
40
20
F
I
F
I
= 10A
F
I
= 10A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
1500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
1200
900
I
= 10A
F
I
= 50A
F
1000
600
300
0
I
= 25A
F
I
= 25A
F
I
= 50A
I
= 10A
F
F
100
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-739
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CPU165MU
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
430µF
80%
5% Ic
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig.18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 4 - IMS-1 Package (10 pins)
Section D - page D-13
C-740
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