CPV364MU [INFINEON]
IGBT SIP MODULE Ultra-Fast IGBT; IGBT模块SIP超高速IGBT
| 型号： | CPV364MU |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE Ultra-Fast IGBT |
| 文件： | 总8页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 5.025A
CPV364MU
IGBT SIP MODULE
Ultra-Fast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
D1
D2
D3
D4
D5
D6
Q1
Q2
Q3
Q4
Q5
3
6
9
4
15
10
16
Q6
12
18
Product Summary
7
13
19
Output Current in a Typical 20 kHz Motor Drive
5.4 ARMS per phase (1.7 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
20
IC @ TC = 100°C
10
60
ICM
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
60
IF @ TC = 100°C
9.3
IFM
60
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
2500
63
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
25
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink,flat,greased surface
2.0
3.0
—
θJC (DIODE)
θCS (MODULE)
—
°C/W
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 1
C-757
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CPV364MU
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.0
—
11
—
—
—
—
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.63
V/°C VGE = 0V, IC = 1.0mA
IC = 10A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.0 2.6
VGE = 15V
2.3
1.7
—
—
—
V
IC = 20A
See Fig. 2, 5
IC = 10A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-13
18
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
—
S
VCE = 100V, IC = 20A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
3500
µA
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.3 1.7
1.2 1.6
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±500 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
8.8
19
25
21
67
11
33
—
—
IC = 20A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 20A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
96 190
43 120
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.32
0.13
—
—
mJ
ns
0.45 0.8
td(on)
tr
td(off)
tf
25
23
—
—
—
—
—
—
—
—
60
TJ = 150°C,
See Fig. 9, 10, 11, 18
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
Turn-Off Delay Time
Fall Time
175
140
1.6
1500
190
17
Ets
Total Switching Loss
Input Capacitance
mJ
pF
ns
A
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
42
TJ = 25°C See Fig.
74 120
4.0 6.0
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.5
10
V R = 200V
Qrr
80 180
220 600
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-758
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CPV364MU
16
12
8
5.0
3.7
S
2.5
TC= 90°C
TJ = 125°C
1.2
4
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
0
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
100
10
1000
100
T
= 150°C
J
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
10
1
V
= 15V
V
= 100V
G E
20µs PULSE W IDTH
C C
5µs PULSE W IDTH
1
0.1
1
10
5
10
15 20
V
, G ate-to-E m itter Voltage (V)
VC E , Collector-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-759
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CPV364MU
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
VGE = 15V
V
= 15V
G E
80µs P ULSE W IDTH
I
= 40A
C
I
= 20A
= 10A
C
C
I
A
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 1 20 140 160
T , Case Temperature (°C)
TC , Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-760
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CPV364MU
20
16
12
8
3000
V
I
= 400V
= 20A
V
C
C
C
= 0V,
f = 1MHz
C E
C
GE
ies
= C + C
,
C
ce
SHORTED
ge
gc
= C
res
oes
gc
2500
2000
1500
1000
500
= C + C
ce
gc
C
C
ies
oes
C
res
4
0
0
0
10
20
30
40
50
60
1
10
100
VCE , Collector-to-Emitter Voltage (V)
Q , Total G ate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.9
1.8
1.7
1.6
1.5
1.4
10
V
V
T
I
= 480V
= 15V
= 25°C
= 20A
R
V
V
= 10 Ω
= 15V
= 480V
CC
G E
C
G
GE
CC
I
= 40A
= 20A
C
C
C
I
I
= 10A
C
1
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
, G ate R esistance (
Ω
)
T
, Case Temperature (°C)
G
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-761
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CPV364MU
6.0
1000
100
10
Ω
= 10
R
T
V
V
G
V
T
= 20V
= 125°C
G E
= 150°C
= 480V
= 15V
C
J
C C
G E
5.0
4.0
3.0
2.0
1.0
0.0
SAFE OP ERATING AREA
1
0
10
20
30
40
50
1
10
100
1000
V
, C olle ctor-to-E m itter V oltage (V )
I
, C ollecto r-to-E m itter C urrent (A )
C
C E
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-762
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CPV364MU
100
100
10
1
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
40
20
I
= 15A
F
I
= 5.0A
F
I
= 5.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
I
= 15A
F
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-763
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CPV364MU
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
430µF
80%
Ic
of Vce
D.U.T.
5% Ic
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig.18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 5 - IMS-2 Package (13 pins)
Section D - page D-14
C-764
To Order
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