DD1200S33K2CB3S2NDSA1 [INFINEON]
Rectifier Diode,;型号: | DD1200S33K2CB3S2NDSA1 |
厂家: | Infineon |
描述: | Rectifier Diode, 二极管 |
文件: | 总6页 (文件大小:474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Repetitiveꢀpeakꢀreverseꢀvoltage
Tvj = 25°C
Tvj = -25°C
3300
3300
VRRM
IF
IFRM
I²t
PRQM
ton min
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
1200
2400
500
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
ꢀ kA²s
ꢀ kW
ꢀ µs
最大损耗功率
Maximumꢀpowerꢀdissipation
Tvj = 125°C
2400
10,0
最小开通时间
Minimumꢀturn-onꢀtime
ꢀ
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 1200 A, VGE = 0 V
IF = 1200 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
2,80 3,50
2,80 3,50
V
V
VF
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 1200 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
1700
2000
A
A
VR = 1800 V
VGE = -15 V
Tvj = 125°C
IRM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 1200 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
710
1300
µC
µC
VR = 1800 V
VGE = -15 V
Tvj = 125°C
Qr
反向恢复损耗(每脉冲)
Reverseꢀrecoveryꢀenergy
IF = 1200 A, - diF/dt = 6800 A/µs (Tvj=125°C) Tvj = 25°C
735
1550
mJ
mJ
VR = 1800 V
VGE = -15 V
Tvj = 125°C
Erec
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
12,0
ꢀ
17,0 K/kW
K/kW
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
125
°C
preparedꢀby:ꢀSB
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
approvedꢀby:ꢀDTS
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
6,0
2,6
ꢀ kV
ꢀ kV
局部放电停止电压
Partialꢀdischargeꢀextinctionꢀvoltage
RMS, f = 50 Hz, QPD ≥ 10 pC (acc. to IEC 1287)
VISOL
DCꢀ稳定性
DCꢀstability
Tvj = 25°C, 100 fit
VCE D
1800
AlSiC
AlN
ꢀ
ꢀ
ꢀ
V
ꢀ
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
32,2
32,2
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
19,1
19,1
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 400
ꢀ
ꢀ
min. typ. max.
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个模块ꢀ/ꢀperꢀmodule
RthCH
LsCE
RCC'+EE'
Tstg
ꢀ
ꢀ
6,00
K/kW
nH
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
25
ꢀ
ꢀ
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
ꢀ
0,32
mΩ
°C
储存温度
Storageꢀtemperature
ꢀ
-40
4,25
ꢀ
125
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
-
5,75 Nm
2,1 Nm
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM4ꢀ根据相应的应用手册进行安装
ScrewꢀM4ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
螺丝ꢀM8ꢀ根据相应的应用手册进行安装
1,8
8,0
-
-
M
G
10
Nm
g
ScrewꢀM8ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
重量
Weight
ꢀ
ꢀ
1000
ꢀ
Dauergleichstrom: chipbezogener Wert; Terminalwert pro Zweig: <1000A
DC forward current: chip related value; terminal value per arm: <1000A
Dynamische Daten gelten in Verbindung mit FZ1200R33KF2C Modul.
Dynamic data valid in conjunction with FZ1200R33KF2C module.
preparedꢀby:ꢀSB
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
approvedꢀby:ꢀDTS
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
正向偏压特性ꢀ二极管,逆变器ꢀ(典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
RGonꢀ=ꢀꢀΩ,ꢀVCEꢀ=ꢀ1800ꢀV
2400
2500
Tvj = 25°C
Erec, Tvj = 125°C
Tvj = 125°C
2000
1600
1200
800
400
0
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
VF [V]
2,5
3,0
3,5
4,0
0
300 600 900 1200 1500 1800 2100 2400
IF [A]
开关损耗ꢀ二极管,逆变器ꢀ(典型)
瞬态热阻抗ꢀ二极管,逆变器ꢀ
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
ZthJCꢀ=ꢀfꢀ(t)
IFꢀ=ꢀ1200ꢀA,ꢀVCEꢀ=ꢀ1800ꢀV
2500
100
Erec, Tvj = 125°C
ZthJC : Diode
2000
1500
1000
500
0
10
1
i:
1
2
3
4
ri[K/kW]: 7,65 4,25 1,02 4,08
τi[s]:
0,03 0,1 0,3
1
0,1
0,001
0
1
2
3
4
5
6
7
8
9
10 11 12
0,01
0,1
t [s]
1
10
RG [Ω]
preparedꢀby:ꢀSB
approvedꢀby:ꢀDTS
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
安全工作区ꢀ二极管,逆变器ꢀ(SOA)
safeꢀoperationꢀareaꢀDiode,ꢀInverterꢀ(SOA)
IRꢀ=ꢀf(VR)
Tvjꢀ=ꢀ125°C
3000
IR, Modul
2400
1800
1200
600
0
0
500
1000 1500 2000 2500 3000 3500
VR [V]
preparedꢀby:ꢀSB
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
approvedꢀby:ꢀDTS
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
preparedꢀby:ꢀSB
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
approvedꢀby:ꢀDTS
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
DD1200S33K2C
使用条件和条款
ꢀ
使用条件和条款
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preparedꢀby:ꢀSB
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ3.1
approvedꢀby:ꢀDTS
6
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