DD122S10K-K
更新时间:2024-09-19 01:16:02
品牌:INFINEON
描述:Rectifier Diode, 1 Phase, 2 Element, 127A, 1000V V(RRM), Silicon,
DD122S10K-K 概述
Rectifier Diode, 1 Phase, 2 Element, 127A, 1000V V(RRM), Silicon,
DD122S10K-K 数据手册
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PDF下载European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD 122 S
screwing depth
max. 12
for fillister head screw
M6x15 Z4-1
14
15
25
25
80
94
AK
K
A
March 1998
DD 122 S
Elektrische Eigenschaften
Höchstzulässige Werte
Electrical properties
Maximum rated values
repetitive peak reverse voltage
tvj = -40°C...t
tvj = +25°C...t
VRRM DD 122 S:
Periodische Spitzensperrspannung
400 600 800 1000
V
vj max
vj max
VRSM = V RRM
IFRMSM
Stoßspitzenspannung
non-repetitive peak reverse voltage
RMS forward current
+ 50
200
V
A
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
tc = 100°C
tc = 97°C
£
IFAVM
average forward current
121
A
127
A
IFSM
tvj 25°C, t p = 10 ms
tvj = tvj max, tp = 10 ms
Stoßstrom-Grenzwert
Grenzlastintegral
surge current
2500
2000
31200
20000
A
A
A2s
A2s
ò 2
ò 2
I t
£
tvj 25°C, t p = 10 ms
I
t-value
tvj = tvj max, tp = 10 ms
tvj = tvj max, iF = 350 A
tvj = tvj max, vR = VRRM
Charakteristische Werte
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Sperrstrom
Characteristic values
forward voltage
threshold voltage
slope resistance
reverse current
lag charge
vF
max. 1,65
0,95
V
V
V(TO)
rT
W
1,7
m
iR
max. 40
max. 45
max. 25
3
mA
µAs
µAs
kV
tvj = tvj max, iFM = 100 A, DD 121 S: QS
-diF/dt = 100 A/µs, DD 122 S:
Nachlaufladung
VISOL
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Thermische Eigenschaften
Thermal properties
thermal resistance, junction
to case
Q
RthJC
Innerer Wärmewiderstand
max. 0,14 °C/W
max. 0,28 °C/W
max. 0,135 °C/W
max. 0,27 °C/W
max. 0,03 °C/W
max. 0,06 °C/W
=180°el. sin: pro Modul/per module
pro Zweig/per arm
DC: pro Modul/per module
pro Zweig/per arm
RthCK
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul/per module
pro Zweig/per arm
tvj max
tc op
tstg
Höchstzul.Sperrschichttemperatur
Betriebstemperatur
max. junction temperature
operating temperature
storage temperature
150
-40...+150
-40...+150
°C
°C
°C
Lagertemperatur
Mechanische Eigenschaften
Si-Elemente mit Druckkontakt
Innere Isolation
Mechanical properties
Si-pellets with pressure contact
internal insulation
tightening torques
mounting torque
AIN
Anzugsdrehmomente
mechanische Befestigung
elektrische Anschlüsse
Gewicht
Toleranz/tolerance +/- 15%
Toleranz/tolerance +5%/-10%
M1
M2
G
6
Nm
Nm
g
terminal connection torque
weight
6
typ. 430
14
Kriechstrecke
creepage distance
vibration resistance
outline
mm
m/s²
6
×
Schwingfestigkeit
f = 50 Hz
5
9,81
Maßbild
DD 122 S kann auch mit gemeinsamer Anode oder gemeinsamer Kathode geliefert werden.
DD 122 S can also be supplied with common anode or common cathode.
DD 122 S
400
300
I
= 2560 A
FM
300
1280 A
I
= 2560 A
FM
I
A
1280 A
RM
[ ]
Q
[
r
640 A
320 A
640 A
]
µAs
320 A
200
100
160 A
80 A
40 A
20 A
200
160 A
80 A
100
40 A
20 A
100
50
150
100
50
150
0
200
250
200
[
0
250
[
]
]
-di /dt A/µs
DD 122 S/1
DD 122 S/2
-di /dt A/µs
F
F
Bild / Fig. 1
Bild / Fig. 2
Sperrverzögerungsladung Q = f(-di/dt), t = t
, v £ 0,5 V
,
Rückstromspitze I = f(-di/dt), t = t
, v £ 0,5 V
, v = 0,8 V
RRM RM RRM
r
vj
vj (max)
R
RRM
RM
vj
vj (max)
R
v
= 0,8 V
/
Peak reverse recovery current I
= f(-di/dt), t = t
, v £ 0,5 V
,
RM
RRM
RM
vj
vj (max)
R
RRM
Recovered charge Q = f(-di/dt), t = t
, v £ 0,5 V
RRM
,
v = 0,8 V
r
vj
vj (max)
R
RM RRM
v
= 0,8 V
RRM
Parameter: Durchlaßstrom / On-state current I
TM
RM
Parameter: Durchlaßstrom / On-state current I
FM
0.450
0.400
Analytische Elemente des transienten Wärmewiderstandes Z
pro Zweig für DC
thJC
per arm for DC
Analytical elements of transient thermal impedance Z
thJC
0.350
thJC
[°C/W]
Pos. n
[°C/W]
1
2
3
4
5
6
7
Z
R
0,0102 0,0329 0,0805 0,0741
0,00112 0,0175 0,322 1,21
0,072
7,5
thn
t
[s]
n
0.250
Analytische Funktion / Analytical function:
0.200
0.150
n
max
t
-
t n
)
60°
Z
=
R
(1-e
thn
thJC
S
0.100
0.050
0
n=1
120°
180°
DC
180°
2
3 4 6
2
3 4
6
2
3 4
6
2
3 4
t [s]
6
2
3 4
6
10
-3
-2
-1
10
0
10
1
2
10
10
10
DD 121 S/3
Bild / Fig. 3
Transienter innerer Wärmewiderstand Z
für einen Zweig
thJC
bei sinus- und trapezförmigem Stromverlauf
Transient thermal impedance Z , junction to case per arm
thJC
at sinussoidal and trapezoidal waveform.
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
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