DF14MR12W1M1HF_B67 [INFINEON]
PressFIT;
| 型号： | DF14MR12W1M1HF_B67 |
| 厂家： | 
Infineon |
| 描述： | PressFIT |
| 文件： | 总20页 (文件大小：856K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF14MR12W1M1HF_B67
™
EasyPACK module
Preliminary datasheet
EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
™
™
Features
• Electrical features
- VDSS = 1200 V
- IDN = 30 A / IDRM = 60 A
- Low inductive design
- High current density
• Mechanical features
- Integrated NTC temperature sensor
- PressFIT contact technology
- Rugged mounting due to integrated mounting clamps
Potential applications
• Solar applications
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bypass-diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Inverse-polarity protection diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
1
2
3
4
5
6
7
8
9
10
11
Datasheet
2
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.0
Unit
Isolation test voltage
Internal isolation
VISOL
RMS, f = 50 Hz, t = 60 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
> 200
Comparative tracking
index
CTI
RTI
Relative thermal index
(electrical)
housing
140
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
10
Unit
Min.
Max.
Stray inductance module
LsCE
nH
Module lead resistance,
terminals - chip
RAA'+CC' TH = 25 °C, per switch
3
mΩ
Module lead resistance,
terminals - chip
RCC'+EE' TH = 25 °C, per switch
2
mΩ
Storage temperature
Mounting force per clamp
Weight
Tstg
F
-40
20
125
50
°C
N
g
G
24
Note:
The current under continuous operation is limited to 25 A rms per connector pin.
2
MOSFET
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
30
Unit
Drain-source voltage
VDSS
IDDC
Tvj = 25 °C
TH = 90 °C
V
A
Continuous DC drain
current
Tvj = 175 °C, VGS = 18 V
Repetitive peak drain
current
IDRM
VGS
VGS
verified by design, tp limited by Tvjmax
60
A
V
V
Gate-source voltage, max.
transient voltage
D < 0.01
-10/23
-7/20
Gate-source voltage, max.
static voltage
Datasheet
3
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
2 MOSFET
Table 4
Recommended values
Parameter
Symbol Note or test condition
Values
15...18
-5...0
Unit
On-state gate voltage
Off-state gate voltage
VGS(on)
VGS(off)
V
V
Table 5
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
Unit
Min.
Max.
Drain-source on-resistance RDS(on) ID = 30 A
VGS = 18 V,
Tvj = 25 °C
26.4
mΩ
VGS = 18 V,
Tvj = 125 °C
42.8
56.8
31.8
4.3
VGS = 18 V,
Tvj = 175 °C
VGS = 15 V,
Tvj = 25 °C
Gate threshold voltage
VGS(th) ID = 12 mA, VDS = VGS, Tvj = 25 °C, (tested afeꢀ 3.45
5.15
V
1ms pulse at VGS = +20 V)
Total gate charge
Internal gate resistor
Input capacitance
QG
RGint
CISS
VDD = 800 V, VGS = -3/18 V
Tvj = 25 °C
0.09
3.8
µC
Ω
f = 0 kHz, VAC = N/A,
VDS = 800 V, VGS = 0 V
Tvj = 25 °C
Tvj = 25 °C
Tvj = 25 °C
2.7
nF
Output capacitance
COSS
Crss
f = 0 kHz, VAC = N/A,
VDS = 800 V, VGS = 0 V
0.128
0.009
nF
nF
Reverse transfer
capacitance
f = 0 kHz, VAC = N/A,
VDS = 800 V, VGS = 0 V
COSS stored energy
EOSS
IDSS
VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C
52.4
0.02
µJ
µA
Drain-source leakage
current
VDS = 1200 V, VGS = -3 V
Tvj = 25 °C
210
400
Gate-source leakage
current
IGSS
VDS = 0 V, Tvj = 25 °C
VGS = 20 V
nA
ns
Turn-on delay time
(inductive load)
td on
ID = 30 A, RGon = 1.8 Ω,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
23.6
23.6
23.6
17
VDD = 600 V, VGS = -3/18 V
Rise time (inductive load)
tr
ID = 30 A, RGon = 1.8 Ω,
VDD = 600 V, VGS = -3/18 V
ns
17
17
(table continues...)
Datasheet
4
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
3 Body diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
51.6
51.6
51.6
11
Unit
Min.
Max.
Tuꢀn-off delay time
td off
ID = 30 A, RGoff = 2.7 Ω,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
ns
(inductive load)
VDD = 600 V, VGS = -3/18 V
Fall time (inductive load)
tf
ID = 30 A, RGoff = 2.7 Ω,
VDD = 600 V, VGS = -3/18 V
ns
11
11
Turn-on energy loss per
pulse
Eon
ID = 30 A, VDD = 600 V,
0.266
0.266
0.266
0.058
0.058
0.058
1.25
mJ
mJ
L = 35 nH, VGS = -3/18 V,
σ
RGon = 1.8 Ω, di/dt = 3.42
kA/µs (Tvj = 175 °C)
Tuꢀn-off energy loss per
pulse
Eoff
ID = 30 A, VDD = 600 V,
L = 35 nH, VGS = -3/18 V,
σ
RGoff = 2.7 Ω, dv/dt = 43.6
kV/µs (Tvj = 175 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per MOSFET
K/W
°C
Temperature under
switching conditions
-40
175
Note:
The selection of positive and negative gate-source voltages impacts losses and the long-term behavior
of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN
2021-13 must be considered to ensure sound operation of the device over the planned lifetime.
Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed
specifications, please refer to AN 2021-13.
3
Body diode
Table 6
Maximum rated values
Parameter
Symbol Note or test condition
ISD Tvj = 175 °C, VGS = -3 V
Values
Unit
DC body diode forward
current
TH = 90 °C
16
A
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
4.2
Unit
Min.
Max.
Forward voltage
VSD
ISD = 30 A, VGS = -3 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
5.35
V
3.9
3.8
Datasheet
5
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
4 Diode, Boost
4
Diode, Boost
Table 8
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
1200
V
Continuous DC forward
current
IF
IFRM
I2t
40
80
A
A
Repetitive peak forward
current
I2t - value
tP = 1 ms
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 150 °C
320
295
A²s
Table 9
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.40
Unit
Min.
Max.
Forward voltage
VF
IRM
Qr
IF = 40 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
1.85
V
1.70
1.85
Peak reverse recovery
current
VCC = 600 V, IF = 40 A,
-diF/dt = 4000 A/µs
(Tvj = 150 °C)
41.4
A
41.4
41.4
Recovered charge
VCC = 600 V, IF = 40 A,
-diF/dt = 4000 A/µs
(Tvj = 150 °C)
4.58
µC
mJ
4.58
4.58
Reverse recovery energy
Erec
VCC = 600 V, IF = 40 A,
-diF/dt = 4000 A/µs
(Tvj = 150 °C)
0.048
0.048
0.048
1.11
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per diode
K/W
°C
Temperature under
switching conditions
-40
150
5
Bypass-diode
Table 10
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
1200
V
(table continues...)
Datasheet
6
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
6 Inverse-polarity protection diode
Table 10
(continued) Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Maximum RMS forward
current per chip
IFRMSM TH = 80 °C
50
A
Maximum RMS current at
rectifier output
IRMSM TH = 80 °C
50
A
A
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
450
360
I2t - value
1010
648
A²s
Table 11
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
0.95
0.1
Unit
Min.
Max.
Forward voltage
Reverse current
VF
Ir
IF = 30 A
Tvj = 150 °C
V
Tvj = 150 °C, VR = 1200 V
per diode
mA
K/W
Thermal resistance,
junction to heat sink
RthJH
1.29
Temperature under
switching conditions
Tvj, op
-40
150
°C
6
Inverse-polarity protection diode
Table 12
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Maximum RMS forward
current per chip
IFRMSM TH = 80 °C
IRMSM TH = 80 °C
50
50
A
A
A
Maximum RMS current at
rectifier output
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
450
360
I2t - value
1010
648
A²s
Datasheet
7
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
7 NTC-Thermistor
Table 13
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
0.95
0.1
Unit
Min.
Max.
Forward voltage
Reverse current
VF
Ir
IF = 30 A
Tvj = 150 °C
V
Tvj = 150 °C, VR = 1200 V
per diode
mA
K/W
Thermal resistance,
junction to heat sink
RthJH
1.16
Temperature under
switching conditions
Tvj, op
-40
150
°C
7
NTC-Thermistor
Table 14
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
8
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
8
Characteristics diagrams
Output characteristic (typical), MOSFET
ID = f(VDS
Output characteristic (typical), MOSFET
ID = f(VDS
)
)
VGS = 18 V
VGS = 15 V
60
60
55
50
45
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain source on-resistance (typical), MOSFET
Drain source on-resistance (typical), MOSFET
RDS(on) = f(ID)
RDS(on) = f(Tvj)
VGS = 18 V
ID = 30 A
65
60
55
50
45
40
35
30
25
20
60
55
50
45
40
35
30
25
20
-50 -25
0
25
50
75 100 125 150 175
0
5
10 15 20 25 30 35 40 45 50 55 60
Datasheet
9
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Output characteristic field (typical), MOSFET
Transfer characteristic (typical), MOSFET
ID = f(VGS
ID = f(VDS
)
)
Tvj = 175 °C
VDS = 20 V
60
60
55
50
45
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4
5
6
7
8
9
10
11
Gate-source threshold voltage (typical), MOSFET
VGS(th) = f(Tvj)
Gate charge characteristic (typical), MOSFET
VGS = f(QG)
VGS = VDS
ID = 30 A, Tvj = 25 °C
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
18
15
12
9
6
3
0
-3
-50 -25
0
25
50
75 100 125 150 175
0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09
Datasheet
10
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Capacity characteristic (typical), MOSFET
Forward characteristic body diode (typical), MOSFET
ISD = f(VSD
C = f(VDS
)
)
f = 100 kHz, Tvj = 25 °C, VGS = 0 V
Tvj = 25 °C
10
60
55
50
45
40
35
30
25
20
15
10
5
1
0.1
0.01
0.001
0
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward voltage of body diode (typical), MOSFET
VSD = f(Tvj)
Switching losses (typical), MOSFET
E = f(ID)
ISD = 30 A
RGoff = 2.7 Ω, RGon = 1.8 Ω, VDD = 600 V, VGS = -3/18 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40 45 50 55 60
Datasheet
11
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Switching losses (typical), MOSFET
E = f(RG)
Switching times (typical), MOSFET
t = f(ID)
VDD = 600 V, ID = 30 A, VGS = -3/18 V
RGoff = 2.7 Ω, RGon = 1.8 Ω, VDD = 600 V, Tvj = 175 °C, VGS
-3/18 V
=
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.1
0.01
0.001
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50 55 60
Switching times (typical), MOSFET
t = f(RG)
Current slope (typical), MOSFET
di/dt = f(RG)
VDD = 600 V, ID = 30 A, Tvj = 175 °C, VGS = -3/18 V
VDD = 600 V, ID = 30 A, VGS = -3/18 V
1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
0.01
0.001
0
5
10
15
20
25
30
0
4
8
12
16
20
Datasheet
12
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Voltage slope (typical), MOSFET
dv/dt = f(RG)
Reverse bias safe operating area (RBSOA), MOSFET
ID = f(VDS
)
VDD = 600 V, ID = 30 A, VGS = -3/18 V
RGoff = 2.7 Ω, Tvj = 175 °C, VGS = -3/18 V
45
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
0
0
5
10
15
20
25
30
0
200
400
600
800
1000 1200 1400
Transient thermal impedance , MOSFET
Forward characteristic (typical), Diode, Boost
Zth = f(t)
IF = f(VF)
10
80
70
60
50
40
30
20
10
0
1
0.1
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.001
0.01
0.1
1
10
Datasheet
13
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Switching losses (typical), Diode, Boost
Erec = f(IF)
Switching losses (typical), Diode, Boost
Erec = f(RG)
RGon = 1.8 Ω, VCC = 600 V
IF = 40 A, VCC = 600 V
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
10
20
30
40
50
60
70
80
0
4
8
12
16
20
Transient thermal impedance, Diode, Boost
Forward characteristic (typical), Bypass-diode
Zth = f(t)
IF = f(VF)
10
60
55
50
45
40
35
30
25
20
15
10
5
1
0.1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
Datasheet
14
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
8 Characteristics diagrams
Transient thermal impedance, Bypass-diode
Zth = f(t)
Forward characteristic (typical), Inverse-polarity
protection diode
IF = f(VF)
10
60
55
50
45
40
35
30
25
20
15
10
5
1
0.1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
Transient thermal impedance, Inverse-polarity
protection diode
Zth = f(t)
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
10
100000
10000
1000
100
1
0.1
10
0.01
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
Datasheet
15
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
9 Circuit diagram
9
Circuit diagram
J
J
Figure 1
Datasheet
16
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
10 Package outlines
10
Package outlines
Infineon
Figure 2
Datasheet
17
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
11 Module label code
11
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
18
Revision 0.10
2022-11-24
DF14MR12W1M1HF_B67
™
EasyPACK module
Revision history
Revision history
Document version
Date of release Description of changes
0.10
2022-11-24
Initial version
Datasheet
19
Revision 0.10
2022-11-24
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-11-24
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgaꢀantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
a written document signed by
©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-ABF579-001
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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