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元器件品牌
DF300R07PE4_B6
[INFINEON]
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20;
元器件型号：
DF300R07PE4_B6
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20
局域网 栅 功率控制 晶体管
PDF文件：
总10页 (文件大小：1090K)
下载文档：
下载PDF数据表文档文件
型号参数：DF300R07PE4_B6参数
查看货源
DF300R07PE4B6BOSA1
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0
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DF300R12KE3HOSA1
Insulated Gate Bipolar Transistor, 480A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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TOKEN
DF30AA120
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DF30AA160
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DF30BA40
DIODE(THREE PHASES BRIDGE TYPE)
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68
SANREX
DF30BA60
Bridge Rectifier Diode, 30A, 600V V(RRM),
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156
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1
SANREX
DF30BA80
DIODE(THREE PHASES BRIDGE TYPE)
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156
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68
SANREX
DF30CA120
DIODE(THREE PHASES BRIDGE TYPE)
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156
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20
SANREX
DF30CA120
DIODE(THREE PHASES BRIDGE TYPE)
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156
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20
SANREX
DF30CA160
DIODE(THREE PHASES BRIDGE TYPE)
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156
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32
SANREX
DF30CA160
DIODE(THREE PHASES BRIDGE TYPE)
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156
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54
SANREX
DF30CA80
DIODE(THREE PHASES BRIDGE TYPE)
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156
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53
SANREX
DF30CA80
DIODE(THREE PHASES BRIDGE TYPE)
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156
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7
SANREX
DF30CJ-20DP-0.4V(82)
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0
HRS
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