DF4-19MR20W3M1HF_B11 [INFINEON]
PressFIT;型号: | DF4-19MR20W3M1HF_B11 |
厂家: | Infineon |
描述: | PressFIT |
文件: | 总14页 (文件大小:608K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DF4-19MR20W3M1HF_B11
™
EasyPACK module
™
™
EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
Features
• Electrical features
- VDSS = 2000 V
- IDN = 60 A / IDRM = 120 A
- High current density
- Low inductive design
• Mechanical features
- Rugged mounting due to integrated mounting clamps
- PressFIT contact technology
- Integrated NTC temperature sensor
Potential applications
• Solar applications
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
1
2
3
4
5
6
7
8
9
Datasheet
2
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.2
Unit
Isolation test voltage
Internal isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 1 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
10.4
10.2
10.1
9.4
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
Clearance
Comparative tracking
index
> 400
Relative thermal index
(electrical)
RTI
housing
140
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
14
Unit
Min.
Max.
Stray inductance module
Storage temperature
LsCE
nH
°C
Tstg
M
-40
1.3
125
1.5
Mounting torque for
module mounting
- Mounting according to M5, Screw
valid application note
Nm
Weight
G
78
g
Note:
The current under continuous operation is limited to 25 A rms per connector pin.
2
MOSFET
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
2000
60
Unit
Drain-source voltage
VDSS
IDN
Tvj = 25 °C
TH = 65 °C
V
A
A
Implemented drain current
Continuous DC drain
current
IDDC
Tvj = 175 °C, VGS = 18 V
50
Repetitive peak drain
current
IDRM
VGS
VGS
verified by design, tp limited by Tvjmax
120
A
V
V
Gate-source voltage, max.
transient voltage
D < 0.01
-10/23
-7/20
Gate-source voltage, max.
static voltage
Datasheet
3
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
2 MOSFET
Table 4
Recommended values
Parameter
Symbol Note or test condition
Values
18
Unit
On-state gate voltage
Off-state gate voltage
VGS(on)
VGS(off)
V
V
-3
Table 5
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
Unit
Min.
Max.
Drain-source on-resistance RDS(on) ID = 60 A
VGS = 18 V,
Tvj = 25 °C
17.2
26.5
mΩ
VGS = 18 V,
Tvj = 125 °C
36.6
51.7
4.3
VGS = 18 V,
Tvj = 175 °C
Gate threshold voltage
VGS(th) ID = 34 mA, VDS = VGS, Tvj = 25 °C, (tested afeꢀ 3.45
5.15
V
1ms pulse at VGS = +20 V)
Total gate charge
Internal gate resistor
Input capacitance
QG
RGint
CISS
VDD = 1200 V, VGS = -3/18 V
Tvj = 25 °C
0.234
3.8
µC
Ω
f = 100 kHz, VDS = 1200 V, Tvj = 25 °C
VGS = 0 V
7.24
nF
Output capacitance
COSS
Crss
f = 100 kHz, VDS = 1200 V, Tvj = 25 °C
VGS = 0 V
0.169
0.012
nF
nF
Reverse transfer
capacitance
f = 100 kHz, VDS = 1200 V, Tvj = 25 °C
VGS = 0 V
COSS stored energy
EOSS
IDSS
VDS = 1200 V, VGS = -3/18 V, Tvj = 25 °C
154
µJ
µA
Drain-source leakage
current
VDS = 2000 V, VGS = -3 V
Tvj = 25 °C
0.012
205
400
Gate-source leakage
current
IGSS
VDS = 0 V, Tvj = 25 °C
VGS = 20 V
nA
ns
Turn-on delay time
(inductive load)
td on
ID = 60 A, RGon = 1.6 Ω,
VDD = 1200 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
38.1
38.1
38.1
26
VGS = -3/18 V
Rise time (inductive load)
tr
ID = 60 A, RGon = 1.6 Ω,
VDD = 1200 V,
VGS = -3/18 V
ns
ns
26
26
Tuꢀn-off delay time
(inductive load)
td off
ID = 60 A, RGoff = 2 Ω,
VDD = 1200 V,
VGS = -3/18 V
74.4
81.5
83.9
(table continues...)
Datasheet
4
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
3 Body diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
16
Unit
Min.
Max.
Fall time (inductive load)
tf
ID = 60 A, RGoff = 2 Ω,
VDD = 1200 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
ns
16.1
17.1
1.5
VGS = -3/18 V
Turn-on energy loss per
pulse
Eon
ID = 60 A, VDD = 1200 V,
Lσ = 35 nH, VGS = -3/18 V,
RGon = 1.6 Ω, di/dt = 5
kA/µs (Tvj = 175 °C)
mJ
mJ
1.5
1.5
Tuꢀn-off energy loss per
pulse
Eoff
ID = 60 A, VDD = 1200 V,
Lσ = 35 nH, VGS = -3/18 V,
RGoff = 2 Ω, dv/dt = 56.14
kV/µs (Tvj = 175 °C)
0.435
0.481
0.529
0.515
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per MOSFET
K/W
°C
Temperature under
switching conditions
-40
175
™
Note:
The body diode of CoolSiC Trench MOSFET cannot be used for polarity protection. An external diode is
needed for this purpose.
The selection of positive and negative gate-source voltages impacts the long-term behavior of the MOSFET
and body diode. The design guidelines described in Application Notes AN 2018-09 and AN 2021-13 must be
considered to ensure sound operation of the device over the planned lifetime.
Tvj op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed
specifications, please refer to AN 2021-13
3
Body diode
Table 6
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
4.6
Unit
Min.
Max.
Forward voltage
VSD
ISD = 60 A, VGS = -3 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
6.15
V
4.15
4
Datasheet
5
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
4 Diode, Boost
4
Diode, Boost
Table 7
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
2000
V
Continuous DC forward
current
IF
IFRM
I2t
40
80
A
A
Repetitive peak forward
current
I2t - value
tP = 1 ms
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
90
70
A²s
Table 8
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.50
Unit
Min.
Max.
Forward voltage
VF
IF = 40 A
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.85
V
2.17
2.67
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per diode
0.685
K/W
°C
Temperature under
switching conditions
-40
175
Note:
Tvj op > 150°C is allowed for operation at overload conditions for booster diode. For detailed specifications,
please refer to AN 2021-13
5
NTC-Thermistor
Table 9
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
6
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
6 Characteristics diagrams
6
Characteristics diagrams
Output characteristic (typical), MOSFET
ID = f(VDS
Output characteristic field (typical), MOSFET
ID = f(VDS
)
)
VGS = 18 V
Tvj = 175 °C
120
120
100
80
60
40
20
0
100
80
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Drain source on-resistance (typical), MOSFET
RDS(on) = f(Tvj)
Transfer characteristic (typical), MOSFET
ID = f(VGS
)
VGS = 18 V
VDS = 20 V
60
50
40
30
20
10
0
120
100
80
60
40
20
0
-50 -25
0
25
50
75 100 125 150 175
1
2
3
4
5
6
7
8
9
10 11
Datasheet
7
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
6 Characteristics diagrams
Gate-source threshold voltage (typical), MOSFET
VGS(th) = f(Tvj)
Gate charge characteristic (typical), MOSFET
VGS = f(QG)
VGS = VDS
ID = 60 A, Tvj = 25 °C
6
5
4
3
2
1
0
18
15
12
9
6
3
0
-3
0.00
-50 -25
0
25
50
75 100 125 150 175
0.05
0.10
0.15
0.20
0.25
Capacity characteristic (typical), MOSFET
C = f(VDS
Switching losses (typical), MOSFET
E = f(ID)
)
f = 100 kHz, Tvj = 25 °C, VGS = 0 V
RGoff = 2 Ω, RGon = 1.6 Ω, VDD = 1200 V, VGS = -3/18 V
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
0.01
1
10
100
1000
0
20
40
60
80
100
120
Datasheet
8
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
6 Characteristics diagrams
Switching losses (typical), MOSFET
E = f(RG)
Switching times (typical), MOSFET
t = f(ID)
VDD = 1200 V, ID = 60 A, VGS = -3/18 V
RGoff = 2.0 Ω, RGon = 1.6 Ω, VDD = 1200 V, Tvj = 175 °C, VGS
-3/18 V
=
5
4
3
2
1
0
0.1
0.01
0
2
4
6
8
10 12 14 16 18 20
0
20
40
60
80
100
120
Switching times (typical), MOSFET
t = f(RG)
Reverse bias safe operating area (RBSOA), MOSFET
ID = f(VDS
)
VDD = 1200 V, ID = 60 A, Tvj = 175 °C, VGS = -3/18 V
RGoff = 2 Ω, Tvj = 175 °C, VGS = -3/18 V
1
140
120
100
80
60
40
20
0
0.1
0.01
0
2
4
6
8
10 12 14 16 18 20
0
400
800
1200
1600
2000
2400
Datasheet
9
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
6 Characteristics diagrams
Transient thermal impedance , MOSFET
Forward characteristic (typical), Diode, Boost
Zth = f(t)
IF = f(VF)
1
80
60
40
20
0.1
0
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.001
0.01
0.1
1
10
Transient thermal impedance, Diode, Boost
Temperature characteristic (typical), NTC-Thermistor
Zth = f(t)
R = f(TNTC)
1
100000
10000
1000
100
0.1
10
0.01
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
Datasheet
10
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
7 Circuit diagram
7
Circuit diagram
J
J
Figure 1
8
Package outlines
B
dimensioned for EJOT Delta PT WN5451 25
4x
L
pcb hole pattern
(P2,3) Dome
r
choose length according to pcb thickness
P0,25ABC
e
h
4x P3,5
4x
s
a
w
d
a
e
h
26
w
e
T2.1 T2.2
C
T1.1 T1.2
A
D
B
r
c
24
20,8
s
1
o
,
t
0
g
B
14
n
i
4
2
,
d
1
5
r
P
o
P
c
x
c
x
2
a
2
5
4
,
0
0
B
2
0
6
GC
SB
GB
SD GD
SC
GA SA
4,8
14
26
20,8
24
DC+C DC+B
DC+D
DC-CD
DC-AB
DC+A
C
0
3
3
3
3
4
4
4
4
,
,
,
,
7
7
4
4
4
4
4
4
0
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
0
8
6
2
0
8
2
0
0
2
8
0
2
6
8
0
4
4
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
6
2
9
3
0
6
7
7
6
0
3
9
2
6
0
4
4
0
(99,3B0,1) Distance of threaded holes in heat sink
109,9B0,45
1
1
1
1
3
3
2
2
2
2
2
2
3
3
- Details about hole specification for contacts refer to AN2009-01 chapter 2
A
- Diameters of drill P1,15mm
- Copper thickness in hole 25~50um
1
,
0
)
2
)
B
1
4
(
,
2
,
6
1
2
(
1
recommended design hight
Figure 2
Datasheet
11
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
9 Module label code
9
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
12
Revision 1.00
2022-07-15
DF4-19MR20W3M1HF_B11
™
EasyPACK module
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
2022-07-05
2022-07-15
Initial version
Final datasheet
Datasheet
13
Revision 1.00
2022-07-15
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-07-15
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgaꢀantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
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©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-ABE754-002
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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