ECONOPACK3 [INFINEON]
IGBT Chip in NPT-technology; IGBT芯片在NPT技术
| 型号： | ECONOPACK3 |
| 厂家： | 
Infineon |
| 描述： | IGBT Chip in NPT-technology |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC156T120R2C
IGBT Chip in NPT-technology
FEATURES:
This chip is used for:
C
E
·
·
·
·
·
·
1200V NPT technology 200µm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
·
power module
BSM100GD120DN2
Applications:
drives
G
·
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
Q67041-
A4661-A003
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2 sawn on foil
MECHANICAL PARAMETER:
mm2
Raster size
12.59 X 12.59
8 x ( 3.98 x 2.38 )
1.46 x 0.8
158.5 / 132.6
200
Emitter pad size
Gate pad size
Area total / active
Thickness
µm
mm
grd
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Emitter metallization
82 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
1200
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
300
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
1200
2.0
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V , IC=5mA
VGE=15V, IC=100A
IC=4mA , VGE=VCE
VCE=1200V , VGE=0V
VCE=0V , VGE=20V
2.5
5.5
3.0
6.5
600
600
V
4.5
µA
nA
W
IGES
RGint
5
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
VC E=25V,
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
-
-
-
6.5
-
-
-
nF
VGE=0V,
f=1MHz
Output capacitance
1
Reverse transfer capacitance
0.5
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
160
320
Tj=125° C
VC C =600V,
IC =100A,
80
400
70
160
520
100
Turn-off delay time
Fall time
VGE=+15/ -15V,
RG=6.8 W
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
SIGC156T120R2C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BSM100GD120DN2
ECONOPACK3
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
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