ESD0P2RF-02LRH-E6327XTMA1 [INFINEON]
Trans Voltage Suppressor Diode, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, GREEN, PLASTIC, TSLP-2-17, 2 PIN;
| 型号： | ESD0P2RF-02LRH-E6327XTMA1 |
| 厂家： | 
Infineon |
| 描述： | Trans Voltage Suppressor Diode, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, GREEN, PLASTIC, TSLP-2-17, 2 PIN 局域网 二极管 |
| 文件： | 总17页 (文件大小：1546K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diodes
Transient Voltage Suppressor Diodes
ESD0P2RF Series
Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode
ESD0P2RF-02LS
ESD0P2RF-02LRH
Data Sheet
Rev. 1.2, 2012-10-01
Final
Power Management & Multimarket
Edition 2012-10-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD0P2RF Series
Revision History: Rev. 1.1,.2012-04-27
Page or Item
Subjects (major changes since previous revision)
Rev. 1.2, 2012-10-01 Page Nr.8 Package name corrected (mismatch)
10
Table 2-4 updated
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
3
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode
1
Bi-directional Ultra-low Capacitance ESD / Transient Protection
Diode
1.1
Features
•
ESD / transient protection of RF signal lines according to:
– IEC61000-4-2 (ESD): ±20 kV (air/contact)
– IEC61000-4-4 (EFT): 40 A (5/50 ns)
– IEC61000-4-5 (surge): 3 A (8/20 μs)
•
•
•
•
•
•
Maximum working voltage: VRWM ±5.3 V
Extremely low capacitance: CL = 0.2 pF (typical)
Low clamping voltage: VCL = 29 V at IPP = 16 A (typical)
Very low reverse current IR < 1 nA typ.
Very small form factor down to 0.62 x 0.32 x 0.31 mm3
Pb-free (RoHS compliant) and halogen free package
1.2
Application Examples
•
•
ESD protection of sensitive RF signal lines, Bluetooth Class 2, Automated Meter Reading
RF antenna protection, frontend module, GPS, mobile TV, FM radio, UWB
1.3
Product Description
Pin 1
Pin 2
Pin 1
Pin 2
Pin 1 marking
(lasered)
TSLP-2
Pin 1
Pin 2
TSSLP-2
a) Pin configuration
b) Schematic diagram
PG-TS(S)LP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1 Ordering Information
Type
Package
Configuration
Marking code
ESD0P2RF-02LS
ESD0P2RF-02LRH
PG-TSSLP-2-1
PG-TSLP-2-17
1 line, bi-directional
1 line, bi-directional
T
T
Final Data Sheet
4
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
2
Characteristics
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Min.
–
Max.
20
ESD air / contact discharge1)
Peak pulse current (tp = 8/20 μs)2) IPP
VESD
–
–
–
–
kV
A
–
3
Operating temperature range
TOP
Tstg
-55
-65
125
150
°C
°C
Storage temperature
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA=25°C, unless otherwise specified
ꢇ
ꢁ
ꢇꢊꢊ
ꢇꢈꢉꢊ
ꢀ
ꢏꢏꢏ ꢀꢁꢂꢃꢄꢂꢅꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ ꢀꢁꢂꢃꢄꢂꢅꢆꢎꢏꢂꢂꢋꢐꢉ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢎꢏꢂꢂꢋꢐꢉ
ꢁ
ꢂ
ꢇ
ꢁ
ꢆꢀ
ꢆꢇ
ꢀ
ꢂꢃꢄꢅ
ꢇ
ꢆꢇ
ꢆꢀ
ꢂ
ꢀꢂꢎ
ꢀꢈꢉꢊ ꢀꢍꢂ ꢀꢂꢋꢌ
ꢇꢂ
ꢇꢂꢋꢌ
ꢀ
ꢀ
ꢁ
ꢂ
ꢇꢂꢋꢌ
ꢇꢂ
ꢀꢂꢋꢌ ꢀꢍꢂ ꢀꢁꢎ
ꢀꢈꢉꢊ
ꢆꢀ
ꢂ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢏꢏꢏ ꢑꢙꢐꢄꢚꢒꢎꢆꢂꢋꢍꢒꢍꢉꢄꢐꢎꢋ
ꢃꢄꢅ
ꢂꢋꢌ
ꢍꢂ
ꢁꢎ
ꢂꢎ
ꢈꢉꢊ
ꢂꢋꢌ
ꢂ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢃꢁꢂꢜꢒꢐꢊꢆꢇꢁꢈꢉꢄꢊꢋꢆꢚꢄꢝꢘ
ꢏꢏꢏ ꢖꢂꢋꢄꢜꢅꢁꢃꢐꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ ꢀꢁꢂꢃꢄꢂꢅꢆꢎꢈꢄꢚꢛꢒꢐꢊꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢎꢈꢄꢚꢛꢒꢐꢊꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ !"ꢆꢇꢁꢈꢉꢄꢊꢋ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢃꢁꢂꢜꢒꢐꢊꢆꢎꢏꢂꢂꢋꢐꢉꢆꢚꢄꢝꢘ
ꢏꢏꢏ ꢌꢋꢇꢋꢂꢍꢋꢆꢎꢏꢂꢂꢋꢐꢉ
ꢆꢀ
ꢆꢇ
ꢂꢃꢄꢅ
ꢆꢇ
ꢇ
ꢇ
ꢇ
ꢇ
ꢇꢊꢊ
ꢇꢈꢉꢊ
ꢏꢏꢏ "ꢋꢄꢜꢆꢛꢏꢈꢍꢋꢆꢎꢏꢂꢂꢋꢐꢉ
ꢏꢏꢏ !"ꢆꢎꢏꢂꢂꢋꢐꢉ
ꢊꢊ
ꢈꢉꢊ
ꢇ
ꢑꢒꢁꢅꢋꢓꢔꢕꢄꢂꢄꢎꢉꢋꢂꢒꢍꢉꢒꢎꢓꢔꢏꢂꢇꢋꢓꢖꢒꢗꢅꢒꢂꢋꢎꢉꢒꢁꢐꢄꢈꢘꢍꢇꢊ
Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
5
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values
Typ.
Unit
Note /
Test Condition
Min.
–5.3
7
Max.
5.3
–
Reverse working voltage VRWM
–
–
V
V
Breakdown voltage
VBR
IR = 1 mA,
from pin 1 to pin 2,
from pin 2 to pin 1
Reverse current
IR
–
<1
50
nA
VR = 5.3 V
Table 2-3 RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
0.4
Diode capacitance
CL
–
–
0.23
0.2
pF
pF
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
0.4
Table 2-4 ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
–
Clamping voltage2)
Clamping voltage1)
VCL
–
–
–
–
–
–
–
29
38
11
15
1
V
I
I
I
I
TLP = 16 A
TLP = 30 A
PP = 1 A
–
17
21
–
PP = 3 A
Dynamic resistance2)
Series inductance
RDYN
LS
Ω
0.2
0.4
–
nH
nH
ESD0P2RF-02LS
ESD0P2RF-02LRH
–
1)IPP according to IEC61000-4-5 (tp = 8/20 µs)
2) Please refer to Application Note AN210 [4]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between ITLP1 = 10 A and
ITLP2 = 40 A.
Final Data Sheet
6
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
2.2
Typical Characteristics at TA = 25 °C, unless otherwise specified
10-7
10-8
+125°C
+85°C
10-9
10-10
10-11
10-12
+25°C
0
1
2
3
4
5
6
VR [V]
Figure 2-2 Reverse current: IR = f(VR), TA = parameter
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
VR [V]
Figure 2-3 Line capacitance: CL = f(VR), f = 1 MHz
Final Data Sheet
7
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
0.26
0.25
0.24
0.23
0.22
0.21
0.2
5.3V
3.3V
0V
0
500
1000
1500
2000
2500
3000
f [MHz]
Figure 2-4 Line capacitance: CL = f(f), VR = parameter
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5.3V
3.3V
0V
-50
-25
0
25
TA [°C]
50
75
100
125
Figure 2-5 Line capacitance: CL = f(TA), VR = parameter
Final Data Sheet
8
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
120
100
80
60
40
20
0
VCL-max-peak = 112 [V]
VCL-30ns-peak = 24.8 [V]
-20
-100
0
100 200 300 400 500 600 700 800 900
tp [ns]
Figure 2-6 IEC61000-4-2 VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2
20
0
-20
-40
-60
VCL-max-peak = -116 [V]
-80
V
CL-30ns-peak = -25.0 [V]
-100
-120
-100
0
100 200 300 400 500 600 700 800 900
tp [ns]
Figure 2-7 IEC61000-4-2 VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
9
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
180
160
140
120
100
80
VCL-max-peak = 162 [V]
CL-30ns-peak = 37.4 [V]
V
60
40
20
0
-20
-100
0
100 200 300 400 500 600 700 800 900
tp [ns]
Figure 2-8 IEC61000-4-2 VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2
20
0
-20
-40
-60
VCL-max-peak = -169 [V]
-80
V
CL-30ns-peak = -37.6 [V]
-100
-120
-140
-160
-180
-100
0
100 200 300 400 500 600 700 800 900
tp [ns]
Figure 2-9 IEC61000-4-2 VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
10
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Characteristics
40
30
20
10
0
20
15
10
5
ESD0P2RF-02xx
RDYN
RDYN=1.0Ω
0
0
5
10 15 20 25 30 35 40 45 50 55 60
VTLP [V]
Figure 2-10 Clamping voltage : ITLP = f(VTLP) [4]
17
16
15
14
13
12
11
10
9
8
7
0
1
2
3
4
I
[A]
PP
Figure 2-11 Clampine voltage: VCL = f(IPP), tp = 8/20 μs
Final Data Sheet
11
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Application Information
3
Application Information
Protected signal line
1
ESD
I/O sensitive
device
The protection diode should be placed very close to the location
where the ESD or other transients can occur to keep loops and
inductances as small as possible .
Pin 2 (or pin 1) should be connected directly to a ground plane on
the board .
2
Application_ESD0P2RF -02xx.vsd
Figure 3-1 Single line, bi-directional ESD / Transient protection [1], [2]
Final Data Sheet
12
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Ordering Information Scheme (Examples)
4
Ordering Information Scheme (Examples)
ESD 0P1 RF - XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines(i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 4-1 Ordering information scheme
Final Data Sheet
13
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Package Information
5
Package Information
5.1
PG-TSLP-2-17 (mm) [5]
Top view
Bottom view
+0ꢀ01
-0ꢀ0ꢂ
0ꢀꢂ9
0ꢀ0ꢁ
0ꢀ6
0ꢀ0ꢁ MAXꢀ
2
1
1)
0ꢀ0ꢂꢁ
0ꢀꢁ
Cathode
marking
1) Dimension applies to plated terminal
TSLP 2 7 PO V02
Figure 5-1 PG-TSLP-2-17: Package overview
0.6
0.45
Copper
Solder mask
Stencil apertures
TSLP-2-7-FP V01
Figure 5-2 PG-TSLP-2-17: Footprint
0ꢀꢁ
4
0ꢀ76
Orientation
marking
TSLP-2-7-TP V0ꢂ
Figure 5-3 PG-TSLP-2-17: Packing
Figure 5-4 PG-TSLP-2-17: Marking (example)
Final Data Sheet
14
Rev. 1.2, 2012-10-01
ESD0P2RF Series
Package Information
6
Package Information
6.1
PG-TSSLP-2-1 (mm) [5]
Top view
Bottom view
+0ꢀ01
-0ꢀ02
0ꢀꢁ1
0ꢀ0ꢁ5
0ꢀꢁ2
2
1
1)
0ꢀ025
0ꢀ26
Cathode
marking
1) Dimension applies to plated terminal
TSSLP-2-1,-2-PO V05
Figure 6-1 PG-TSSLP-2-1: Package overview
0ꢀꢁ2
0ꢀ27
Copper
Solder mask
Stencil apertures
TSSLP-2-1,-2-FP V02
Figure 6-2 PG-TSSLP-2-1: Footprint
0ꢀꢁ5
4
Cathode
marking
Ex
Figure 6-3 PG-TSSLP-2-1: Packing
Figure 6-4 PG-TSSLP-2-1: Marking (example)
Final Data Sheet
15
Rev. 1.2, 2012-10-01
ESD0P2RF Series
References
References
[1] Infineon AG - Application Note AN167: ESD Protection for Broadband LNA BGA728L7 for Portable and
Mobile TV Applications
[2] Infineon AG - Application Note AN178: ESD Protection for RF Antennas using Infineon ESD0P4RFL and
ESD0P2RF-xx
[3] Infineon AG - Application Note AN200: Low Cost FM Radio LNA using BFR340F for Mobile Phone
Applications
[4] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level using VF-TLP
Characterization Methodology
[5] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
Final Data Sheet
16
Rev. 1.2, 2012-10-01
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
ESD0P2RF-02LSE6327
Trans Voltage Suppressor Diode, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, 0.62 X 0.32 MM, 0.31 MM HEIGHT, GREEN, PLASTIC, TSSLP-2-1, 2 PIN
INFINEON
ESD0P2RF02LSE6327XTSA1
Trans Voltage Suppressor Diode, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, 0.62 X 0.32 MM, 0.31 MM HEIGHT, GREEN, PLASTIC, TSSLP-2-1, 2 PIN
INFINEON
ESD0P4RFLE6327XTSA1
Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 2 Element, Silicon, 1.20 X 0.80 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, LEADLESS, TSLP-4-7, 4 PIN
INFINEON
ESD0P8RFL-E6327
Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 2 Element, Silicon, 1.20 X 0.80 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, LEADLESS, TSLP-4-7, 4 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明