ESD110-B1 [INFINEON]
ESD / transient protection according to;
| 型号： | ESD110-B1 |
| 厂家： | 
Infineon |
| 描述： | ESD / transient protection according to |
| 文件： | 总17页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Protection Device
TVS (Transient Voltage Suppressor)
ESD110-B1 Series
Bi-directional, 18.5 V (AC), 0.3 pF, 0201, 0402, RoHS and Halogen Free compliant
ESD110-B1-02ELS
ESD110-B1-02EL
Data Sheet
Revision 1.4, 2014-10-23
Final
Power Management & Multimarket
Edition 2014-10-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD110-B1 Series
Product Overview
1
Product Overview
1.1
Features
•
ESD / transient protection according to:
– IEC61000-4-2 (ESD): ±15 kV (air), ±12 kV (contact)
– IEC61000-4-5 (Surge): ±2 A (tp = 8 / 20 µs)
Bi-directional, working voltage up to VRWM = ±18.5 V (AC)
Ultra-low capacitance: CL = 0.3 pF (typical)
Low clamping voltage: VCL = 28 V (typical) at ITLP = 16 A
Very low reverse current: IR < 1 nA (typical)
•
•
•
•
•
Pb-free (RoHS compliant) and halogen free package
1.2
Application Examples
•
ESD Protection of RF signal lines in Near Field Communication (NFC) applications
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 2
Pin 1
Pin 2
PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1 Part Information
Type
Package
Configuration
Marking code
ESD110-B1-02ELS
ESD110-B1-02EL
TSSLP-2-4
TSLP-2-20
1 line, bi-directional
1 line, bi-directional
X
XX
Final Data Sheet
3
Revision 1.4, 2014-10-23
ESD110-B1 Series
Maximum Ratings
2
Maximum Ratings
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit
ESD air discharge2)
VESD
±15
±12
58
kV
ESD contact discharge2)
Peak pulse power3)
Peak pulse current3)
Operating temperature
PPK
IPP
W
A
±2
TOP
Tstg
-40 to 125
-55 to 150
°C
°C
Storage temperature
1) Device is electrically symmetrical
2) VESD according to IEC61000-4-2
3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3
Electrical Characteristics at TA = 25 °C, unless otherwise specified
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Figure 3-1 Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.4, 2014-10-23
ESD110-B1 Series
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified1)
Parameter Symbol Values
Typ.
Unit
Note / Test Condition
Min.
-18.5
-15
20
20
–
Max.
18.5
15
–
Reverse working voltage VRWM
–
V
for AC voltages (NFC)
for DC voltages
–
Trigger voltage
Holding voltage
Vt1
Vh
–
V
V
21
19
<1
10
26
–
TA = 25 °C, IT = 0.5 mA
TA = 125 °C, IT = 0.5 mA
TA = 25 °C, VR = 18.5 V
TA = 125 °C, VR = 18.5 V
Reverse leakage current IR
–
30
–
nA
–
1) Device is electrically symmetrical
Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
pF
Note / Test Condition
Min.
0.15
0.15
–
Max.
0.5
0.5
–
Line capacitance
Serie inductance
CL
0.3
0.3
0.2
0.4
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
ESD110-B1-02ELS
ESD110-B1-02EL
LS
nH
–
–
Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
35
44
24
29
–
Clamping voltage2)
Clamping voltage3)
Dynamic resistance2)
VCL
–
–
–
–
–
30
39
19
24
0.6
V
I
I
I
I
TLP = 16 A, tp = 100 ns
TLP = 30 A, tp = 100 ns
PP = 1 A, tp = 8/20 μs
PP = 2 A, tp = 8/20 μs
VCL
RDYN
Ω
tp = 100 ns
1) Device is electrically symmetrical
2) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps
3) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Final Data Sheet
5
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
4
Typical Characteristics Diagrams
Typical characteristics diagrams at TA=25°C, unless otherwise specified
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
10
0
5
10
15
20
V [V]
R
Figure 4-1 Reverse leakage current: IR = f(VR)
0.6
0.5
0.4
0.3
0.2
0.1
0
1 MHz
1 GHz
0
2
4
6
8
10
12
14
16
18
20
V [V]
R
Figure 4-2 Line capacitance: CL = f(VR)
Final Data Sheet
6
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
160
140
120
100
80
Scope: 6 GHz, 20 GS/s
V
= 142 V
= 26 V
CL-max-peak
V
60
CL-30ns-peak
40
20
0
-20
-50
0
50
100 150 200 250 300 350 400 450
t [ns]
p
Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2
20
Scope: 6 GHz, 20 GS/s
0
-20
-40
-60
-80
V
= -144 V
= -25 V
CL-max-peak
-100
-120
-140
-160
V
CL-30ns-peak
-50
0
50
100 150 200 250 300 350 400 450
t [ns]
p
Figure 4-4 Clamping voltage (ESD): VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
7
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
200
175
150
125
100
75
Scope: 6 GHz, 20 GS/s
V
= 187 V
= 33 V
CL-max-peak
V
CL-30ns-peak
50
25
0
-25
-50
0
50
100 150 200 250 300 350 400 450
t [ns]
p
Figure 4-5 Clamping voltage (ESD): VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
0
-25
-50
-75
-100
-125
-150
-175
-200
V
= -181 V
= -31 V
CL-max-peak
V
CL-30ns-peak
-50
0
50
100 150 200 250 300 350 400 450
t [ns]
p
Figure 4-6 Clamping voltage (ESD): VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
8
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
30
25
20
15
10
5
15
12.5
10
ESD110-B1 Series
R
DYN
R
= 0.6 Ω
DYN
7.5
5
2.5
0
0
-5
-2.5
-5
-10
-15
-20
-25
-30
-7.5
-10
-12.5
-15
R
= 0.6 Ω
DYN
-40 -35 -30 -25 -20 -15 -10 -5
0
5 10 15 20 25 30 35 40
V
[V]
TLP
Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP) [1], pin 1 to pin 2
Final Data Sheet
9
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
2.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
-30 -25 -20 -15 -10 -5
0
5
10
15
20
25
30
V
[V]
CL
Figure 4-8 Clamping voltage(Surge): IPP = f(VCL)
Final Data Sheet
10
Revision 1.4, 2014-10-23
ESD110-B1 Series
Typical Characteristics Diagrams
0
-2
-4
-6
-8
-10
-12
-14
-16
ESD110-B1-02EL
ESD110-B1-02ELS
10
100
1000
f [MHz]
10000
Figure 4-9 Insertion loss vs. frequency in a 50 Ω system
Final Data Sheet
11
Revision 1.4, 2014-10-23
ESD110-B1 Series
Application Information
5
Application Information
Mobile phone
differential antenna
Interconnection
top/bottom shell
“external pads”
Main PCB / Top shell
Bottom shell
RF=13.56MHz
signalvs . GND<+-18Vp
+Vsignalvs . -Vsignal <36V!!!
TX+
loop+
TX-
GND
RX
E MI LP filter
GND
Antenna
matching
loop-
Caps should be high
voltage type to be save
regards the residual
ESD peak
Mobile phone
single ended antenna
Interconnection
top/bottom shell
“external pads”
Bottom shell
Main PCB / Top shell
RF=13.56MHz
signalvs . GND<+-18Vp
TX+
loop
TX-
E MI LP filter
Antenna
matching
GND
RX
GND
Caps should be high
voltage type to be save
regards the residual
ESD peak
ESD18V_application example .vsd
Figure 5-1 Bi-directional ESD / Transient protection for NFC Frontend [3]
Final Data Sheet
12
Revision 1.4, 2014-10-23
ESD110-B1 Series
Package Information
6
Package Information
6.1
TSSLP-2-4
Top view
Bottom view
+0ꢀ01
-0ꢀ02
0ꢀ31
0ꢀ0ꢁ
0ꢀ32
2
1
1)
0ꢀ0ꢁ MAXꢀ
0ꢀ03ꢁ
0ꢀ26
Pin 1
marking
1) Dimension applies to plated terminals
TSSLP-2-3, -4-PO V01
Figure 6-1 TSSLP-2-4: Package outline
0ꢀ32
0ꢀ27
Copper
Solder mask
Stencil apertures
TSSLP-2-3, -4-FP V02
Figure 6-2 TSSLP-2-4: Footprint
0ꢀ3ꢁ
4
Tape type
Ex Ey
Punched Tape
0ꢀ43 0ꢀ73
Embossed Tape 0ꢀ37 0ꢀ67
Deliveries can be both tape types (no selection possible)ꢀ
Specification allows identical processing (pick & place) by usersꢀ
Pin 1
Ex
TSSLP-2-3, -4-TP V03
marking
Figure 6-3 TSSLP-2-4: Packing
Type code
Pin 1 marking
TSSLP-2-3, -4-MK V01
Figure 6-4 TSSLP-2-4: Marking (example) Table 1-1 “Part Information” on Page 3
Final Data Sheet 13 Revision 1.4, 2014-10-23
ESD110-B1 Series
Package Information
6.2
TSLP-2-20
Top view
Bottom view
+0ꢀ01
-0ꢀ02
0ꢀꢂ1
0ꢀ0ꢁ
0ꢀ6
0ꢀ0ꢁ MAXꢀ
2
1
1)
0ꢀ0ꢂꢁ
0ꢀꢁ
Pin 1
marking
1) Dimension applies to plated terminals
TSLP-2-19, -20-PO V01
Figure 6-5 TSLP-2-20: Package overview
0.6
0.45
Copper
Solder mask
Stencil apertures
TSLP-2-19, -20-FP V01
Figure 6-6 TSLP-2-20: Footprint
0ꢀ4
4
Pin 1
marking
0ꢀ76
TSLP-2-19, -20-TP V02
Figure 6-7 TSLP-2-20: Packing
Type code
12
Pin 1 marking
TSLP-2-19, -20-MK V01
Figure 6-8 TSLP-2-20: Marking example Table 1-1 “Part Information” on Page 3
Final Data Sheet
14
Revision 1.4, 2014-10-23
ESD110-B1 Series
References
References
[1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
[3] Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend
Final Data Sheet
15
Revision 1.4, 2014-10-23
ESD110-B1 Series
Revision History: Rev. 1.3, 2014-04-08
Page or Item
Subjects (major changes since previous revision)
Revision 1.4, 2014-10-23
4
Table 2-1) updated
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
16
Revision 1.4, 2014-10-23
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
ESD111-B1-W0201
Low Clamping Voltage, Low Capacitance, Bi Directional ESD/ Transient Protection Diode (TVS: transient voltage suppressor)
INFINEON
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