ESD311-U1-02N [INFINEON]
USB V 总线的单向 ESD 保护 /瞬态保护/电涌保护 – IEC61000-4-2 (ESD)：±30 kV（空气/接触） – IEC61000-4-4 (ESD)：80 A（5/50 µs） – IEC61000-4-5（浪涌）：28 A (8/20 μs);
| 型号： | ESD311-U1-02N |
| 厂家： | 
Infineon |
| 描述： | USB V 总线的单向 ESD 保护 /瞬态保护/电涌保护 – IEC61000-4-2 (ESD)：±30 kV（空气/接触） – IEC61000-4-4 (ESD)：80 A（5/50 µs） – IEC61000-4-5（浪涌）：28 A (8/20 μs) |
| 文件： | 总13页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Protection Device
TVS (Transient Voltage Suppressor)
ESD311-U1-02N
Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant
ESD311-U1-02N
Data Sheet
Revision 1.0, 2014-05-28
Final
Power Management & Multimarket
Edition 2014-05-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD311-U1-02N
Product Overview
1
Product Overview
1.1
Features
•
ESD / Transient / Surge protection according to:
– IEC61000-4-2 (ESD): ±30 kV (air / contact discharge)
– IEC61000-4-4 (EFT): ±4 kV / ±80 A (5/50 ns)
– IEC61000-4-5 (surge): ±28 A (8/20 μs)
•
•
•
•
•
•
Uni-directional working voltage up to VRWM = 15 V
Low capacitance: CL = 210 pF (typical)
Low clamping voltage VCL = 29 V (typical) at IPP = 28 A
Low reverse current. IR < 1 nA (typical)
Small and flat-profile SMD plastic package: 1.6 mm x 0.8 mm x 0.375 mm.
Pb-free (RoHS compliant) and halogen free package
1.2
Application Examples
•
Surge protection of USB VBUS lines in mobile devices
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 2
Pin 1
Pin 2
PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram (in mm)
Table 1-1 Part Information
Type
Package
Configuration
Marking code
ESD311-U1-02N
TSNP-2-2
uni-directional
A
Final Data Sheet
3
Revision 1.0, 2014-05-28
ESD311-U1-02N
Maximum Ratings
2
Maximum Ratings
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
VESD
PPK
Values
±30
Unit
kV
W
ESD air / contact discharge1)
Peak pulse power2)
800
Peak pulse current2)
IPP
28
A
Operating temperature range
TOP
-40 to 125
-65 to 150
°C
°C
Storage temperature
Tstg
1) VESD according to IEC61000-4-2
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3
Electrical Characteristics
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Figure 3-1 Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.0, 2014-05-28
ESD311-U1-02N
Electrical Characteristics
Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values
Typ.
Unit
Note / Test Condition
Min.
–
Max.
15
Reverse working voltage VRWM
–
V
Breakdown voltage
Reverse current
VBR
IR
16
–
17
<1
–
V
IT = 1 mA
VR = 15V
100
nA
Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
210
Unit
Note / Test Condition
Min.
Max.
Line capacitance
CL
–
290
pF
VR = 0 V, f = 1 MHz
Table 3-3 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
26.5
28
Clamping voltage1)
Clamping voltage2)
Dynamic resistance1)
VCL
–
–
–
–
–
22
V
I
I
I
I
TLP = 16 A, tp = 100 ns
TLP = 30 A, tp = 100 ns
PP = 1 A, tp = 8/20 µs
PP = 28 A, tp = 8/20 µs
23
21
25.5
35
29
RDYN
0.07
–
Ω
tp = 100 ns
1) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100 ns, tr = 600 ps.
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Final Data Sheet
5
Revision 1.0, 2014-05-28
ESD311-U1-02N
Typical Characteristics Diagrams
4
Typical Characteristics Diagrams
Typical characteristics diagrams at TA = 25°C, unless otherwise specified
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
10
0
2
4
6
8
10
12
14
16
V [V]
R
Figure 4-1 Reverse leakage current: IR = f(VR)
220
200
180
160
140
120
100
80
60
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V [V]
R
Figure 4-2 Line capacitance: CL = f(VR)
Final Data Sheet
6
Revision 1.0, 2014-05-28
ESD311-U1-02N
Typical Characteristics Diagrams
75
50
25
0
Scope: 6 GHz, 20 GS/s
V
V
= 42 V
= 20 V
CL-max-peak
CL-30ns-peak
-25
-50
0
50
100
150
200
250
300
350
400
450
t [ns]
p
Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
0
-25
-50
-75
V
= -31 V
= -1 V
CL-max-peak
V
CL-30ns-peak
-50
0
50
100
150
200
250
300
350
400
450
t [ns]
p
Figure 4-4 Clamping voltage (ESD) VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
Final Data Sheet
7
Revision 1.0, 2014-05-28
ESD311-U1-02N
Typical Characteristics Diagrams
75
50
25
0
Scope: 6 GHz, 20 GS/s
V
= 20 V
CL-max-peak
V
= -20 V
CL-30ns-peak
-25
-50
0
50
100
150
200
250
300
350
400
450
t [ns]
p
Figure 4-5 Clamping voltage (ESD) VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
0
-25
-50
-75
V
= -52 V
= -1 V
CL-max-peak
V
CL-30ns-peak
-50
0
50
100
150
200
250
300
350
400
450
t [ns]
p
Figure 4-6 Clamping voltage (ESD) VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
Final Data Sheet
8
Revision 1.0, 2014-05-28
ESD311-U1-02N
Typical Characteristics Diagrams
ESD311-U1-02N
R
DYN
80
60
40
30
R
= 0.07 Ω
DYN
40
20
10
20
0
0
-20
-40
-60
-80
-10
-20
-30
-40
R
= 0.05 Ω
DYN
-30 -25 -20 -15 -10 -5
0
5
10 15 20 25 30
V
[V]
TLP
Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP)[1], pin 1 to pin 2
Final Data Sheet
9
Revision 1.0, 2014-05-28
ESD311-U1-02N
Typical Characteristics Diagrams
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-15
-10
-5
0
5
10
[V]
15
20
25
30
35
V
CL
Figure 4-8 Pulse current (Surge): IPP = f(VCL)[1], pin 1 to pin 2
Final Data Sheet
10
Revision 1.0, 2014-05-28
ESD311-U1-02N
Package Information
5
Package Information
5.1
TSNP-2-2
Top view
Bottom view
0.4 MAX.
0.02 MAX.
0.0ꢀ
0.0ꢀ
0.7
0.8
A
0.1 A
0.1ꢀ x 4ꢀ°
B
Pin 1 marking
TSNP-2-2-PO V01
Figure 5-1 TSNP-2-2: Package outline
0.7
0.7
0.7
0.7
Copper
Solder mask
Stencil apertures
TSNP-2-2-FP V01
Figure 5-2 TSNP-2-2: Footprint
4
0.ꢀ
Pin 1
marking
0.9ꢀ
TSNP-2-2-TP V01
Figure 5-3 TSNP-2-2: Packing
Pin 1 marking
Date code (M)
Type code
TSNP-2-2-MK V01
Figure 5-4 TSNP-2-2: Marking example, Type code see: Table 1-1 “Part Information” on Page 3
Final Data Sheet
11
Revision 1.0, 2014-05-28
ESD311-U1-02N
Revision History: Rev. 0.9.1, 2014-05-20
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2014-05-28
All
Status change to final
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
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EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
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development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.0, 2014-05-28
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Published by Infineon Technologies AG
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