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FD1000R33HE3KB60BPSA1 [INFINEON]

Insulated Gate Bipolar Transistor,;
FD1000R33HE3KB60BPSA1
元器件型号： FD1000R33HE3KB60BPSA1
生产厂家： INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用：

Insulated Gate Bipolar Transistor,

栅
PDF文件： 总12页 (文件大小：1002K)
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型号参数：FD1000R33HE3KB60BPSA1参数
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FD1000R33HE3KBOSA1

 Insulated Gate Bipolar Transistor

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0 INFINEON

FD100H06A5B

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5BPBF

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5F

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100H06A5P

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 VISHAY

FD100N06A5B

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5F

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5P

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100N06A5R

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 5 INCH, WAFER

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0 VISHAY

FD100R12KF-K

 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048

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30 ETC

FD100U06A5B

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

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0 VISHAY

FD100U06A5B

 Rectifier Diode, 1 Element, 600V V(RRM)

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0 IRF

FD100U06A5F

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

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0 VISHAY

FD100U06A5P

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

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0 VISHAY

FD100U06A5P

 Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

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0 VISHAY
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