FD100U06A5B [INFINEON]
Rectifier Diode, 1 Element, 600V V(RRM);
| 型号： | FD100U06A5B |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Element, 600V V(RRM) 二极管 |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
I - 0517J rev. B
FD100U06A5B
FRED Die in Wafer Form
600V
VF = 1.25V
(typ.)
z 100% Tested at Probe c
5" Wafer
Electrical Characteristics
Parameter
Description
Min
–––
–––
600V
–––
–––
–––
Typ
1.25V
1.03V
–––
Max
1.8V
1.38V
–––
Test Conditions
VFM
Typical Forward Voltage
TJ = 25°C, IF = 8A
2)
2)
VFM
Typical Forward Voltage
TJ = 25°C, IF = 2A
VRRM
IRM
Minimum Reverse Breakdown Voltage
Max. Reverse Leakage Current
Reverse Recovery Time
TJ = 25°C, IRRM = 100μA
TJ = 25°C, VRRM = 600V
–––
2.3μA
–––
3)
trr
36 ns
54 ns
IF = 1A, di/dt = 100A/μs, VR = 30V 3)
IF = 8A, di/dt = 100A/μs, VR = 30V 2)
–––
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni-Ag ( 1kA-2kA-3kA)
99%Al, 1%Si (3 μm)
0.100" x 0.100" (see drawing)
125 mm
Wafer Diameter:
Wafer Thickness:
14 mils
Scribe Line Width
90 ±10 μm
Reject Ink Dot Size
Recommended Storage Environment:
0.25 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
TO-220
Recommended Die Attach Conditions:
Reference Package
Die Outline
NOTES:
40 (1.57)
Wafer flat alligned with
side b of the die
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).
2. CONTROLLING DIMENSION (INCH):
a
c
0.35 ± 0.01
(14 ± 0.4)
3. DIMENSIONS AND TOLERANCES:
a = 2.54 +0, - 0.01
(100 +0, - 0.4)
b = 2.54 +0, - 0.01
C
(100 +0, - 0.4)
c = 1.48 +0, - 0.01
(58.1 +0, - 0.4)
d = 1.48 +0, - 0.01
A
(58.1 +0, - 0.4)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
5. SAWING:
Recommended Blade
Ø
125 (4.92)
SEMITEC S1025 QS00 Blade
Note:
1) The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
2) V and t limits refer to packaged devices in TO-220 unless otherwise stated.
rr
F
3) V and t limits refer to wafer level
rr
F
www.irf.com
1
03/23/06
FD100U06A5B
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level
testing, please contact your local IR Sales.
Shipping
Three shipping options are offered as standard.
•
•
•
Un-sawn wafer
Die in waffle pack
Die on film
Tape and Reel is also available for some products. Please consult your local IR sales office or email
DieSales@irf.com for additional information.
Please specify your required shipping option when requesting prices and ordering Die product. If not
specified, Un-sawn wafer will be assumed.
Packaging
Device
Description
Minimum Order Quantity
Die in sale Package
1200
FD100U06A5B
FD100U06A5R
FD100U06A5P
FD100U06A5F
Inked Probed Unsawn Wafer (Wafer in Box)
Probed Die in Tape & Reel
n/a contact Factory
n/a contact Factory
n/a contact Factory
Probed Die in Waffle Pack
Inked Probed Sawn Wafer on Film
Handling
•
•
•
Product must be handled only at ESD safe workstations. Standard ESD precautions and
safe work environments are as defined in MIL-HDBK-263.
Product must be handled only in a class 10,000 or better-designated clean room
environment.
Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD
protected tip should be used.
Wafer/Die Storage
•
•
•
Proper storage conditions are necessary to prevent product contamination and/or
degradation after shipment.
Un-sawn wafers and singulated die can be stored for up to 12 months when in the original
sealed packaging at room temperature (45% +/- 15% RH controlled environment).
Un-sawn wafers and singulated die that have been opened can be stored when returned to
their containers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15%
RH controlled environment).
•
Note: To reduce the risk of contamination or degradation, it is recommended that product not
being used in the assembly process be returned to their original containers and resealed with
a vacuum seal process.
•
•
Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.
Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf
life. This is primarily due to the nature of the adhesive tape used to hold the product in the
carrier tape cavity. This product can be stored for up to 30 days. This applies whether or not
the material has remained in its original sealed container.
Further Information
For further information please contact your local IR Sales office or email your enquiry to
DieSales@irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 039/06
2
www.irf.com
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