FD600R17KE3KB5NOSA1 [INFINEON]
Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES,;
| 型号： | FD600R17KE3KB5NOSA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, 栅 |
| 文件： | 总10页 (文件大小：738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
IGBT,ꢀ制动-斩波器ꢀ/ꢀIGBT,ꢀBrake-Chopper
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
ꢀ
ꢀ
ꢀ
V
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
600
950
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
1200
4,30
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 150°C
ꢀ kW
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 600 A, VGE = 15 V
IC = 600 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
2,00 2,45
2,40
V
V
VCE sat
VGEth
QG
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
5,2
5,8
7,00
2,1
54,0
1,70
ꢀ
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
Cres
ICES
IGES
td on
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
0,65
0,70
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
0,16
0,20
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
1,30
1,60
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 600 A, VCE = 900 V
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
0,18
0,30
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 600 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
125
185
mJ
mJ
Eon
Eoff
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 600 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V
RGoff = 3,0 Ω
Tvj = 25°C
Tvj = 125°C
150
220
mJ
mJ
ꢀ
ꢀ
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
ISC
ꢀ
VCEmax = VCES -LsCE ·di/dt
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
tP ≤ 10 µs, Tvj = 125°C
2400
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
29,0 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
24,0
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
二极管，制动-斩波器ꢀ/ꢀDiode,ꢀBrake-Chopper
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Repetitiveꢀpeakꢀreverseꢀvoltage
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1700
600
ꢀ
ꢀ
ꢀ
V
A
A
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
tP = 1 ms
1200
125
Repetitiveꢀpeakꢀforwardꢀcurrent
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
ꢀ kA²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
1,60 2,00
1,70
V
V
VF
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
710
775
A
A
VR = 900 V
VGE = -15 V
Tvj = 125°C
IRM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
180
300
µC
µC
VR = 900 V
VGE = -15 V
Tvj = 125°C
Qr
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
120
210
mJ
mJ
VR = 900 V
VGE = -15 V
Tvj = 125°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
46,0
ꢀ
55,0 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
125
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
反向二极管ꢀ/ꢀDiode,ꢀReverse
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1700
600
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
1200
125
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
ꢀ kA²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 600 A, VGE = 0 V
IF = 600 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
1,60 2,00
1,70
V
V
VF
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V Tvj = 125°C
710
775
A
A
IRM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
VR = 900 V Tvj = 125°C
180
300
µC
µC
Qr
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 600 A, - diF/dt = 3750 A/µs (Tvj=125°C) Tvj = 25°C
120
210
mJ
mJ
VR = 900 V
Tvj = 125°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
46,0
ꢀ
55,0 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
125
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
10,2
5,1
ꢀ kV
ꢀ kV
局部放电停止电压
Partialꢀdischargeꢀextinctionꢀvoltage
RMS, f = 50 Hz, QPD typ 10 pC (acc. to IEC 1287)
VISOL
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
AlSiC
AlN
ꢀ
ꢀ
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
56,0
56,0
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
26,0
26,0
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 600
ꢀ
ꢀ
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
LsCE
ꢀ
ꢀ
25
ꢀ
ꢀ
nH
mΩ
°C
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
RCC'+EE'
RAA'+CC'
0,37
0,37
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
储存温度
Storageꢀtemperature
ꢀ
Tstg
M
-40
4,25
ꢀ
125
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
-
5,75 Nm
2,1 Nm
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM4ꢀ根据相应的应用手册进行安装
ScrewꢀM4ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
螺丝ꢀM8ꢀ根据相应的应用手册进行安装
1,8
8,0
-
-
M
G
10
Nm
g
ScrewꢀM8ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
重量
Weight
ꢀ
ꢀ
1000
ꢀ
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ制动-斩波器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,ꢀBrake-Chopperꢀ(typical)
输出特性ꢀIGBT,ꢀ制动-斩波器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,ꢀBrake-Chopperꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ125°C
1200
1200
Tvj = 25°C
Tvj = 125°C
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
1080
960
840
720
600
480
360
240
120
1080
960
840
720
600
480
360
240
120
0
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
传输特性ꢀIGBT,ꢀ制动-斩波器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,ꢀBrake-Chopperꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ制动-斩波器ꢀ（典型)
switchingꢀlossesꢀIGBT,ꢀBrake-Chopperꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ2.4ꢀΩ,ꢀRGoffꢀ=ꢀ3ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
1200
550
Tvj = 25°C
Eon, Tvj = 125°C
Tvj = 125°C
Eoff, Tvj = 125°C
500
450
400
350
300
250
200
150
100
50
1080
960
840
720
600
480
360
240
120
0
5
0
6
7
8
9
10
11
12
13
0
200
400
600
IC [A]
800
1000
1200
VGE [V]
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ制动-斩波器ꢀ（典型)
switchingꢀlossesꢀIGBT,ꢀBrake-Chopperꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ制动-斩波器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,ꢀBrake-Chopperꢀ
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ600ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
900
100
Eon, Tvj = 125°C
ZthJC : IGBT
Eoff, Tvj = 125°C
800
700
600
500
400
300
200
100
0
10
1
i:
1
2
3
4
ri[K/kW]: 5,8 5,8 11,6 5,8
τi[s]:
0,01 0,04 0,09 0,2
0,1
0,001
0
2
4
6
8
10 12 14 16 18 20 22 24
RG [Ω]
0,01
0,1
t [s]
1
10
反偏安全工作区ꢀIGBT,ꢀ制动-斩波器ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,ꢀBrake-Chopper
(RBSOA)
正向偏压特性ꢀ二极管，制动-斩波器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀBrake-Chopperꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
ICꢀ=ꢀfꢀ(VCE
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ3ꢀΩ,ꢀTvjꢀ=ꢀ125°C
1300
1200
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
1100
1000
900
800
700
600
500
400
300
200
100
0
0
200 400 600 800 1000 1200 1400 1600 1800
VCE [V]
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管，制动-斩波器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀBrake-Chopperꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管，制动-斩波器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀBrake-Chopperꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ2.4ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
IFꢀ=ꢀ600ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
300
250
Erec, Tvj = 125°C
Erec, Tvj = 125°C
225
250
200
150
100
50
200
175
150
125
100
75
50
25
0
0
0
200
400
600
IF [A]
800
1000
1200
0
2
4
6
8
10
12
14
16
18
RG [Ω]
瞬态热阻抗ꢀ二极管，制动-斩波器ꢀ
正向偏压特性ꢀ反向二极管ꢀ（典型)
transientꢀthermalꢀimpedanceꢀDiode,ꢀBrake-Chopperꢀ
forwardꢀcharacteristicꢀofꢀDiode,ꢀReverseꢀ(typical)
ZthJCꢀ=ꢀfꢀ(t)
IFꢀ=ꢀfꢀ(VF)
100
1200
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
1100
1000
900
800
700
600
500
400
300
200
100
0
10
i:
1
2
11
3
22
4
11
ri[K/kW]: 11
τi[s]:
0,01 0,04 0,04 0,2
1
0,001
0,01
0,1
t [s]
1
10
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
开关损耗ꢀ反向二极管ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀReverseꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ反向二极管ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀReverseꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ2.4ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
IFꢀ=ꢀ600ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
300
250
Erec, Tvj = 125°C
Erec, Tvj = 125°C
225
250
200
150
100
50
200
175
150
125
100
75
50
25
0
0
0
200
400
600
IF [A]
800
1000
1200
0
2
4
6
8
10
12
14
16
18
RG [Ω]
瞬态热阻抗ꢀ反向二极管ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀReverseꢀ
ZthJCꢀ=ꢀfꢀ(t)
100
ZthJC : Diode
10
i:
1
2
3
4
ri[K/kW]: 11
11
22
11
τi[s]:
0,01 0,04 0,04 0,2
1
0,001
0,01
0,1
t [s]
1
10
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
9
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FD600R17KE3-K_B5
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
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Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-25
revision:ꢀ2.2
10
相关型号：
FD600R17KF6C_B2
Insulated Gate Bipolar Transistor, 975A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
INFINEON
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