FF08MR12W1MA1_B11A [INFINEON]

EasyPACK™ 1B, 8 mΩ halfbridge module implementing the new CoolSiC™ Automotive MOSFET 1200V, NTC temperature sensor and PressFIT contact technology. With the full automotive qualification, the field of applications for CoolSIC™ is now extended to high voltage automotive applications with high efficiency and switching frequency requirements, such as HV/HV DC-DC step-up converters, multiphase inverters and fast-switching auxiliary drives like fuel-cell compressors.;


型号：	FF08MR12W1MA1_B11A
厂家：	Infineon
描述：	EasyPACK™ 1B, 8 mΩ halfbridge module implementing the new CoolSiC™ Automotive MOSFET 1200V, NTC temperature sensor and PressFIT contact technology. With the full automotive qualification, the field of applications for CoolSIC™ is now extended to high voltage automotive applications with high efficiency and switching frequency requirements, such as HV/HV DC-DC step-up converters, multiphase inverters and fast-switching auxiliary drives like fuel-cell compressors.
文件：	总13页 (文件大小：855K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Easyꢀ1BꢀModule

CoolSiC™ꢀAutomotiveꢀMOSFET

FF08MR12W1MA1_B11A

ꢀQualifiedꢀforꢀAutomotiveꢀApplications.ꢀProductꢀValidationꢀaccordingꢀtoꢀAQGꢀ324

FinalꢀDataꢀSheet

V3.1,ꢀ2020-09-15

AutomotiveꢀHighꢀPower

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription

EasyDUALꢀmoduleꢀwithꢀCoolSiC™ꢀAutomotiveꢀMOSFETꢀandꢀPressFITꢀ/ꢀNTC

V_DSS= 1200 V

I_D= 150 A

TypicalꢀApplications

• AutomotiveꢀApplications

• AuxiliaryꢀInverters

Description

The Automotive CoolSiC^TMEasyPACK^TM1B is a half

bridge module which combines the benefits of

Infineon’s robust silicon carbide technology with a

very compact and flexible package for hybrid and

(fuel cell) electric vehicles. The power module

implements the new CoolSiC^TMAutomotive

MOSFET 1200V Gen1, optimized for high voltage

applications like DC/DC converter and Auxiliary

inverter.The chipset offers benchmark current

density, high block voltage and reduced switching

losses, which allows compact designs and helps to

improve system efficiency, as well as allows a

reliable operation under harsh environmental

conditions.

• DC/DCꢀconverter

• HybridꢀElectricalꢀVehiclesꢀ(H)EV

ElectricalꢀFeatures

• Newꢀsemiconductorꢀmaterialꢀ-ꢀSiliconꢀCarbide

• Blockingꢀvoltageꢀ1200V

• LowꢀRDSon

• LowꢀSwitchingꢀLosses

• LowꢀQgꢀandꢀCrss

• LowꢀInductiveꢀDesign

• T_vjꢀopꢀ=ꢀ150°C

It is qualified for Automotive Applications and

validated according to AQG 324.

The Automotive CoolSiC^TMEasyPACK^TM1B power

module family comes with mechanical guiding

elements and mounting clamps supporting easy

assembly processes for customers. Furthermore,

the press-fit pins for the signal terminals avoid

additional time consuming selective solder

processes, which provides cost savings on system

level and increases system reliability. The

Automotive CoolSiC^TMEasyPACK^TM1B allows a

flexible cooler and application construction. Due to

the high clearance & creepage distances, the

module family is also well suited for increased

system working voltages and supports modular

approaches.

MechanicalꢀFeatures

• 5.1kVꢀDCꢀ1secꢀInsulation

• Compactꢀdesign

• HighꢀPowerꢀDensity

• IntegratedꢀNTCꢀtemperatureꢀsensor

• PressFITꢀContactꢀTechnology

• RoHSꢀcompliant

ProductꢀName

OrderingꢀCode

SP002314006

FF08MR12W1MA1_B11A

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

2ꢀꢀꢀꢀꢀMOSFET

2.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues

Parameter

Conditions

Symbol

V_DSS

Value

1200

150

Unit

Drain-source voltage

DC drain current

T_vj= 25°C

T_H= 65°C

T_vj= 175°C, V_GS= 15 V

I_{D nom}

Pulsed drain current

Gate-source voltage

verified by design, t_plimited by T_vjmax

I_{D pulse}

V_GSS

300

-10/20

2.2ꢀꢀꢀꢀCharacteristicꢀValues

min. typ. max.

Drain-source on resistance

I_{D nom}= 150 A

V_GS= 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

7.33 9.80

10.6

12.1

R_{DS on}

mΩ

Gate threshold voltage

I_D= 90.0 mA, V_DS= V_GS

(tested after 1ms pulse at V_GS= +20 V)

T_vj= 25°C

V_GS(th)

3.25 4.40 5.55

Total gate charge

Internal gate resistor

Input capacitance

V_GS= -5/15 V, V_DS= 600 V

Q_G

0.495

0.6

µC

T_vj= 25°C

R_Gint

Ω

f = 1 MHz, V_GS= 0 V

V_DS= 600 V

C_iss

C_oss

C_rss

16.0

0.70

0.06

Output capacitance

f = 1 MHz, V_GS= 0 V

V_DS= 600 V

T_vj= 25°C

Reverse transfer capacitance

f = 1 MHz, V_GS= 0 V

V_DS= 600 V

C_OSSstored energy

V_DS= 600 V, V_GS= -5 / 15 V

V_DSS= 1200 V, V_GS= -5 V

V_DS= 0 V, T_vj= 25°C

T_vj= 25°C

V_GS= 20 V

E_OSS

I_DSX

I_GSS

164

100

400

µJ

µA

Drain-source leakage current

Gate-source leakage current

Turn on delay time, inductive load

I_{D nom}= 150 A, R_Gon= 5.10 Ω

V_DS= 600 V

V_GS= -5 / 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

53.0

48.0

46.0

t_{d on}

Rise time, inductive load

I_{D nom}= 150 A, R_Gon= 5.10 Ω

V_DS= 600 V

V_GS= -5 / 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

35.0

34.0

33.0

t_r

Turn off delay time, inductive load

Fall time, inductive load

I_{D nom}= 150 A, R_Goff= 5.10 Ω

V_DS= 600 V

V_GS= -5 / 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

146

148

149

t_{d off}

I_{D nom}= 150 A, R_Goff= 5.10 Ω

V_DS= 600 V

V_GS= -5 / 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

38.0

39.0

t_f

Turn-on energy loss per pulse

I_{D nom}= 150 A, V_GS= -5 / 15 V

V_DS= 600 V, R_Gon= 5.10 Ω

L_S= 20 nH

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

4.26

5.01

5.29

E_on

di/dt = 4.92 kA/µs (T_{vj op}= 150°C)

Turn-off energy loss per pulse

SC data

I_{D nom}= 150 A, V_GS= -5 / 15 V

V_DS= 600 V, R_Goff= 5.10 Ω

L_S= 20 nH

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

2.67

2.73

2.76

E_off

du/dt = 15.5 kV/µs (T_{vj op}= 150°C)

V_GS= -5 / 15 V, R_G= 5.10 Ω

V_DD= 800 V

t_P≤ 3 µs, T_vj= 150°C

t_P≤ 3 µs, T_vj= 25°C

2000

2200

I_SC

V_DSmax= V_DSS-L_sDS·di/dt

Thermal resistance, junction to heatsink

Temperature under switching conditions

per MOSFET

R_thJH

T_{vj op}

0.460 0.550 K/W

150 °C

-40

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

3ꢀꢀꢀꢀꢀBodyꢀdiode

3.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues

Parameter

Conditions

Symbol

I_SD

Value

Unit

DC body diode forward current

Pulsed body diode current

T_vj= 175°C, V_GS= -5 V

verified by design, t_plimited by T_vjmax

T_H= 65°C

I_{SD pulse}

300

3.2ꢀꢀꢀꢀCharacteristicꢀValues

min. typ. max.

Forward voltage

I_SD= 150 A

V_GS= -5 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

4.40 5.95

4.18

4.12

V_DSR

Peak reverse recovery current

Recovered charge

I_SD= 150 A, V_GS= -5 V

-di_S/dt = 6.10 kA/µs

V_R= 600 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

75.0

135

158

I_rrm

I_SD= 150 A, V_GS= -5 V

-di_S/dt = 6.10 kA/µs

V_R= 600 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

2.58

4.10

5.13

Q_rr

µC

Reverse recovery energy

I_SD= 150 A, V_GS= -5 V

-di_S/dt = 6.10 kA/µs

V_R= 600 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.48

0.95

1.35

E_rec

4ꢀꢀꢀꢀꢀNTC-Thermistor

Parameter

min. typ. max.

Conditions

Symbol

R₂₅

Value

Unit

kΩ

Ratedꢀresistance

DeviationꢀofꢀR100

Powerꢀdissipation

B-value

T_C= 25°C

5.00

T_C= 100°C, R₁₀₀= 493 Ω

T_C= 25°C

∆R/R

P₂₅

-5

20.0 mW

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

B-value

Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.

5ꢀꢀꢀꢀꢀModule

Parameter

Conditions

Symbol

Value

5.1

Unit

ꢀ kV

ꢀ

Isolationꢀtestꢀvoltage

Internalꢀisolation

Creepageꢀdistance

RMS, f = 0 Hz, t = 1sec

V_ISOL

ꢀ

basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)

Al₂O₃

terminalꢀtoꢀheatsink

terminalꢀtoꢀterminal

11.5

8.0

d_Creep

ꢀ

ꢀ mm

Clearance

terminalꢀtoꢀheatsink

terminalꢀtoꢀterminal

10.0

5.5

d_Clear

CTI

ꢀ

ꢀ mm

Comperativeꢀtrackingꢀindex

> 200

ꢀ

min. typ. max.

5.0

Strayꢀinductanceꢀmodule

Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip

Storageꢀtemperature

L_sCE

R_AA'+CC'

T_stg

mΩ

°C

T_Cꢀ=ꢀ25ꢀ°C,ꢀperꢀswitch

1.00

-40

150

Mounting force per clamp

Weight

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

6ꢀꢀꢀꢀꢀCharacteristicsꢀDiagrams

outputꢀcharacteristicꢀMOSFETꢀ(typical)

I_Dꢀ=ꢀfꢀ(V_DS

)

V_GSꢀ=ꢀ15ꢀV

T_vjꢀ=ꢀ150°C

300

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

V_GS= 13 V

V_GS= 14 V

V_GS= 15 V

V_GS= 16 V

250

200

150

100

250

200

150

100

0,0

0,5

1,0

1,5

2,0

V_DS[V]

2,5

3,0

3,5

4,0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

V_DS[V]

transferꢀcharacteristicꢀMOSFETꢀ(typical)

I_Dꢀ=ꢀfꢀ(V_GS

drainꢀsourceꢀon-resistanceꢀMOSFETꢀ(typical)

R_DS(on)ꢀ=ꢀf(T_j)

)

V_DSꢀ=ꢀ20ꢀV

V_GSꢀ=ꢀ15ꢀV;ꢀI_Dꢀ=ꢀ150ꢀA

300

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

250

200

150

100

125

150

V_GS[V]

T_j[°C]

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

drainꢀsourceꢀon-resistanceꢀMOSFETꢀ(typical)

R_DS(on)ꢀ=ꢀf(T_j)

V_GSꢀ=ꢀ15ꢀV

capacityꢀcharacteristicꢀMOSFETꢀ(typical)

Cꢀ=ꢀfꢀ(V_DS

V_GSꢀ=ꢀ0ꢀV,ꢀT_vjꢀ=ꢀ25°C,ꢀfꢀ=ꢀ100kHz

)

100

C_iss

C_oss

C_rss

0,1

0,01

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

100

150

I_D[A]

200

250

300

100

200

300

V_DS[V]

400

500

600

switchingꢀlossesꢀMOSFETꢀ(typical)

E_onꢀ=ꢀfꢀ(I_D),ꢀE_offꢀ=ꢀfꢀ(I_D)

switchingꢀlossesꢀMOSFETꢀ(typical)

E_onꢀ=ꢀfꢀ(R_G),ꢀE_offꢀ=ꢀfꢀ(R_G)

V_GSꢀ=ꢀ-5ꢀVꢀ/ꢀ+15ꢀV,ꢀR_Gonꢀ=ꢀR_Goffꢀ=ꢀ5.1ꢀΩ,ꢀV_DSꢀ=ꢀ600ꢀV

V_GSꢀ=ꢀ-5ꢀVꢀ/ꢀ+15ꢀV,ꢀI_Dꢀ=ꢀ150ꢀA,ꢀV_DSꢀ=ꢀ600ꢀV

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 125°C

E_off, T_vj= 125°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 125°C

E_off, T_vj= 125°C

100

150

I_D[A]

200

250

300

R_G[Ω]

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

transientꢀthermalꢀimpedanceꢀMOSFETꢀ

forwardꢀcharacteristicꢀMOSFETꢀbodyꢀdiodeꢀ(typical)

Z_thJHꢀ=ꢀfꢀ(t)ꢀ(typical)

I_SDꢀ=ꢀf(V_SD

)

T_jꢀ=ꢀ25°C

300

250

200

150

100

Z_th: Mosfet

0,1

V_GS= -5 V

V_GS= 0 V

V_GS= 15 V

r_i[K/W]: 0,028 0,082 0,256 0,094

τ_i[s]:

0,001 0,021 0,167 0,637

0,01

0,001

0,01

0,1

t [s]

0,0

1,0

2,0

3,0

V_SD[V]

4,0

5,0

6,0

NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)

Rꢀ=ꢀfꢀ(T)

100000

R_typ

10000

1000

100

T_C[°C]

100

120

140

160

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easyꢀ1BꢀModule

7ꢀꢀꢀꢀꢀCircuitꢀdiagram

Final Data Sheet

V3.1,ꢀꢀ2020-09-15

FF08MR12W1MA1_B11A

Easy 1B Module

Package outlines

16,4B0,5

12B0,35

GYYWW

Infineon

FxxxRxxW1 xx

1,3B0,2

EasyPIM

0001

- Pin-Grid 3,2mm

33,8B0,3

0,1

- Tolerance of PCB hole pattern

28,1B0,2

- Hole secificatin for contacts see AN 2009-01

- Diameters of drill 1,15mm and copper thickness in hole 25-50qm

19,4B0,2

16,4B0,2

17,05

14,05

12,8

9,6

G1 S1

T1 T2

PCB hole pattern

6,4

3,2

9,6

12,8

14,05

G2 S2

17,05

P2,3-0,1 x8,5+0,3

0,1

4,5

2x P9 accordind to screw head/ washer

Drawing: D000135987.02

edges general tolerances surface

ISO 8015 principle of independency

dimensions ISO 14405 GG

1. DIN 16742-TG6

DIN ISO

13715

DIN EN ISO

1302

target geometry according CAD file

2. DIN ISO 2768-mk

with general tolerances

method of least-squares

All dimensions refer to module in delivery condition

Final Data Sheet

V3.1, 2020-09-15

FF08MR12W1MA1_B11A

Easy 1B Module

Label Codes

9.1 Module Code

Code Format

Data Matrix

Encoding

ASCII Text

Symbol Size

Standard

16x16

IEC24720 and IEC16022

Code Content

Content

Digit

1 - 5

6 - 11

12 - 19

20 - 21

22 - 23

Example (below)

Module Serial Number

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

71549

142846

55054991

Example

71549142846550549911530

9.2 Packing Code

Code Format

Code128

Code Set A

34 digits

Encoding

Symbol Size

Standard

IEC8859-1

Code Content

Content

Identifier

Digit

2 - 9

12 - 19

21 - 25

28 - 31

33 - 34

Example (below)

Backend Construction Number

Production Lot Number

Serial Number

Date Code

Box Quantity

95056609

2X0003E0

754389

1139

Example

X950566091T2X0003E0S754389D1139Q15

Final Data Sheet

V3.1, 2020-09-15

FF08MR12W1MA1_B11A

Easy 1B Module

Revision History

Major changes since previous revision

Revision History

Reference

V1.0

Date

Description

2018-11-21

2018-11-27

2019-08-13

2020-03-25

2020-09-15

Target datasheet

V1.1

Correction of pin designation in circuit diagram

Target datasheet 1.1, New data for preliminary datasheet

Final datasheet

V2.0

V3.0

V3.1

Correction of Erec energy and du/dt value

Final Data Sheet

V3.1, 2020-09-15

FF08MR12W1MA1_B11A

Easy 1B Module

Terms & Conditions of usage

Edition 2018-08-01

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon

Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office

(http://www.infineon.com)

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the

nearest Infineon Technologies Office.

These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life

support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact

your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review

product requirements and reliability testing.

Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class

III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they

fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Trademarks

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,

DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,

HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,

PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,

SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,

µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of

DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of

Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION

FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor

Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,

MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave

Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun

Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.

TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.

VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of

WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last update

2011-11-11

Final Data Sheet

V3.1, 2020-09-15

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

FF08MR12W1MA1_B11A [INFINEON]

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FF0900M

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