FF2400RB12IP7P [INFINEON]
Common Collector module;型号: | FF2400RB12IP7P |
厂家: | Infineon |
描述: | Common Collector module |
文件: | 总15页 (文件大小:718K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
™
™
PrimePACK 3+ B-series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and NTC / pre-applied
thermal interface material
Features
• Electrical features
- VCES = 1200 V
- IC nom = 2400 A / ICRM = 4800 A
- High current density
- Low inductive design
- Low VCE,sat
- Tvj,op = 150°C
- Overload operation up to 175°C
- TRENCHSTOPTM IGBT7
• Mechanical features
- High creepage and clearance distances
- High power density
- Package with CTI > 400
- Pre-applied thermal interface material
Potential applications
• Three-level applications
• Solar applications
• Energy storage systems
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
-
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
1
2
3
4
5
6
7
8
Datasheet
2
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
4.0
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz
kV
Material of module
baseplate
Cu
Creepage distance
Creepage distance
Clearance
dCreep terminal to heatsink
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
36.0
28.0
21.0
19.0
>400
mm
mm
mm
mm
Clearance
Comparative tracking
index
Table 2
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
5
Unit
Min.
Max.
Stray inductance module
LsCE
nH
Module lead resistance,
terminals - chip
RAA'+CC' TH=25°C, per switch
0.045
mΩ
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
0.045
mΩ
Storage temperature
Tstg
-40
3
150
150
°C
°C
Maximum baseplate
operation temperature
TBPmax
Mounting torque for
module mounting
M
M
- Mounting according to M5, Screw
6
Nm
Nm
valid application note
Terminal connection
torque
- Mounting according to M4, Screw
1.8
8
2.1
10
valid application note
M8, Screw
Weight
G
1400
g
2
IGBT, 3-Level
Table 3
Maximum rated values
Symbol Note or test condition
VCES
Parameter
Values
1200
Unit
Collector-emitter voltage
Tvj = 25 °C
TH = 30 °C
V
A
Implemented collector
current
ICN
2400
Continuous DC collector
current
ICDC
Tvj max = 150 °C
2400
A
(table continues...)
Datasheet
3
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
2 IGBT, 3-Level
Table 3
(continued) Maximum rated values
Symbol Note or test condition
ICRM tp limited by Tvj op
Parameter
Values
Unit
Repetitive peak collector
current
4800
A
Gate-emitter peak voltage
VGES
20
V
Table 4
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.27
1.37
1.40
5.80
38.1
0.23
325
Unit
Min.
Max.
1.79
1.82
1.84
6.45
Collector-emitter
saturation voltage
VCE sat IC = 2400 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 48 mA, VCE = VGE, Tvj = 25 °C
5.15
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
nF
nF
Reverse transfer
capacitance
Cres
1.92
Collector-emitter cut-off
ICES
IGES
tdon
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
5
mA
nA
µs
current
Gate-emitter leakage
current
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
400
Turn-on delay time
(inductive load)
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
VGE = 15 V, RGon = 0.4 Ω
0.645
0.785
0.820
0.185
0.210
0.215
2.800
2.900
3.000
0.205
0.245
0.275
110
Tvj = 125 °C
Tvj = 150 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
VGE = 15 V, RGon = 0.4 Ω
µs
µs
Tvj = 125 °C
Tvj = 150 °C
Turn-off delay time
(inductive load)
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
VGE = 15 V, RGoff = 3.3 Ω
Tvj = 125 °C
Tvj = 150 °C
Fall time (inductive load)
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
VGE = 15 V, RGoff = 3.3 Ω
µs
Tvj = 125 °C
Tvj = 150 °C
Turn-on energy loss per
pulse
Eon
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
mJ
L = 50 nH, VGE = 15 V,
σ
Tvj = 125 °C
205
RGon = 0.4 Ω, di/dt =
Tvj = 150 °C
240
9000 A/µs (Tvj = 150 °C)
(table continues...)
Datasheet
4
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
3 Diode, 3-Level
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
715
Unit
Min.
Max.
Turn-off energy loss per
pulse
Eoff
IC = 2400 A, VCE = 600 V, Tvj = 25 °C
mJ
L = 50 nH, VGE = 15 V,
σ
Tvj = 125 °C
Tvj = 150 °C
845
RGoff = 3.3 Ω, dv/dt =
890
1030 V/µs (Tvj = 150 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per IGBT, Valid with IFX pre-applied Thermal
Interface Material
27.6 K/kW
Temperature under
switching conditions
-40
150
°C
Note:
RthJH max. value is valid for TC= 110 °C.
3
Diode, 3-Level
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
VRRM
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
1200
V
Continuous DC forward
current
IF
2400
4800
A
A
Repetitive peak forward
current
IFRM
tP = 1 ms
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.70
1.65
1.60
735
Unit
Min.
Max.
2.03
1.96
1.94
Forward voltage
VF
IRM
Qr
IF = 2400 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
V
Peak reverse recovery
current
IF = 2400 A, VR = 600 V,
VGE = -15 V, -diF/dt =
6850 A/µs (Tvj = 150 °C)
A
885
895
Recovered charge
IF = 2400 A, VR = 600 V,
VGE = -15 V, -diF/dt =
6850 A/µs (Tvj = 150 °C)
210
µC
410
475
(table continues...)
Datasheet
5
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
4 NTC-Thermistor
Table 6
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
80
Unit
Min.
Max.
Reverse recovery energy
Erec
IF = 2400 A, VR = 600 V,
VGE = -15 V, -diF/dt =
6850 A/µs (Tvj = 150 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
mJ
150
170
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per diode, Valid with IFX pre-applied
Thermal Interface Material
46.4 K/kW
150 °C
Temperature under
switching conditions
-40
Note:
Dynamic data for 3-level valid in conjunction with datasheet FF1800R23IE7, version 1.0.
Tvj op up to 175 °C is allowed for operations in overload conditions. For detailed specifications please refer to
AN2021-11.
RthJH max. value is valid for TC= 95 °C.
4
NTC-Thermistor
Table 7
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
For detailed specifications please refer to AN2009-10.
Datasheet
6
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
5 Characteristics diagrams
5
Characteristics diagrams
Output characteristic (typical), IGBT, 3-Level
IC = f(VCE
VGE = 15 V
Output characteristic field (typical), IGBT, 3-Level
IC = f(VCE
Tvj = 150 °C
)
)
4800
4800
4200
3600
3000
2400
1800
1200
600
4200
3600
3000
2400
1800
1200
600
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Transfer characteristic (typical), IGBT, 3-Level
IC = f(VGE
VCE = 20 V
Switching losses (typical), IGBT, 3-Level
E = f(IC)
)
RGoff = 3.3 Ω, RGon = 0.4 Ω, VCE = 600 V, VGE
=
15 V
Ic is limited to 3600A by FF1800R23IE7 module.
4800
1600
4200
3600
3000
2400
1800
1200
600
1400
1200
1000
800
600
400
200
0
0
5
6
7
8
9
10
11
12
13
14
0
400 800 1200 1600 2000 2400 2800 3200 3600
Datasheet
7
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
5 Characteristics diagrams
Switching losses (typical), IGBT, 3-Level
Switching times (typical), IGBT, 3-Level
E = f(RG)
t = f(IC)
IC = 2400 A, VCE = 600 V, VGE
=
15 V
RGoff = 3.3 Ω, RGon = 0.4 Ω, VCE = 600 V, VGE
150 °C
= 15 V, Tvj =
2000
1800
1600
1400
1200
1000
800
10
1
0.1
0.01
600
400
200
0
0
1
2
3
4
5
6
7
8
9
0
400 800 1200 1600 2000 2400 2800 3200 3600
Switching times (typical), IGBT, 3-Level
Transient thermal impedance , IGBT, 3-Level
t = f(RG)
Zth = f(t)
IC = 2400 A, VCE = 600 V, VGE
= 15 V, Tvj = 150 °C
10
100
10
1
1
0.1
0.1
0.001
0
1
2
3
4
5
6
7
8
9
0.01
0.1
1
10
Datasheet
8
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
5 Characteristics diagrams
Reverse bias safe operating area (RBSOA), IGBT, 3-
Level
Capacity characteristic (typical), IGBT, 3-Level
C = f(VCE
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
)
IC = f(VCE
)
RGoff = 3.3 Ω, VGE = 15 V, Tvj = 150 °C
6000
1000
5400
4800
4200
3600
3000
2400
1800
1200
600
100
10
1
0.1
0.01
0
0
200
400
600
800 1000 1200 1400
0
10 20 30 40 50 60 70 80 90 100
Gate charge characteristic (typical), IGBT, 3-Level
VGE = f(QG)
Forward characteristic (typical), Diode, 3-Level
IF = f(VF)
IC = 2400 A, Tvj = 25 °C
15
12
9
4800
4200
3600
3000
2400
1800
1200
600
6
3
0
-3
-6
-9
-12
-15
0
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
9
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
5 Characteristics diagrams
Switching losses (typical), Diode, 3-Level
Erec = f(IF)
Switching losses (typical), Diode, 3-Level
Erec = f(RG)
VCE = 600 V, RGon = RGon(IGBT)
VCE = 600 V, IF = 2400 A
200
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
400 800 1200 1600 2000 2400 2800 3200 3600
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Transient thermal impedance, Diode, 3-Level
Temperature characteristic (typical), NTC-Thermistor
Zth = f(t)
R = f(TNTC)
100
10
1
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
Datasheet
10
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
6 Circuit diagram
6
Circuit diagram
9,11,13
NTC
6
7
3
4
-
5
8
NC
1
2
10,12,14
Figure 1
Datasheet
11
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
7 Package outlines
7
Package outlines
C
(247)
26
screwing depth
max. 8mm 8x
0,35ADE
E
8x (M2,697)
30,1
1,35ADE
8x
8x max. (2)
recommended design height
36,5
1,2ADE
0,35ABC
8x
2,5
0,5
0
Y
X
screwing depth
max. 16mm 8x
8x max. (3)
recommended design height
36,5
0,8ADE
14x 5,50,1
8x
0,5ADE
14x
B
38,25
117
D
0,35ABC
8x (M8)
1,8ADE
8x
8x
M
8x 5
0,4 CZA
A
2501
8x
36,5
17,7
K
Y
X
H
K
0
0,2AM-M
H
16,2
restricted area for Thermal Interface Material
232
36,5
Dimension in mounted condition ISO 10579
Terminal heights measurement at the end of bending radius
Figure 2
Datasheet
12
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
8 Module label code
8
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
13
Revision 1.10
2022-03-17
FF2400RB12IP7P
™
PrimePACK 3+ B-series module
Revision history
Revision history
Document revision
Date of release Description of changes
1.00
1.10
2021-04-15
2022-03-17
Final datasheet
Final datasheet - update to FF1800R23IE7 Rev. 1.0; Extension of diagrams
to 4800A (except of dynamic data, which is limited by FF1800R23IE7)
Datasheet
14
Revision 1.10
2022-03-17
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-03-17
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-ABA765-002
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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DIODES
FF2484J
Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, HERMETIC SEALED, CERAMIC, DIP-14
ZETEX
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