FF300R17KE3 [INFINEON]
半桥 62 mm 1700 V 300 A 双开关 IGBT 模块,采用第三代 TRENCHSTOP™ IGBT 和第三代发射极控制二极管,是您设计工作的不二之选。;型号: | FF300R17KE3 |
厂家: | Infineon |
描述: | 半桥 62 mm 1700 V 300 A 双开关 IGBT 模块,采用第三代 TRENCHSTOP™ IGBT 和第三代发射极控制二极管,是您设计工作的不二之选。 局域网 开关 双极性晶体管 二极管 |
文件: | 总8页 (文件大小:652K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
62mmꢀC-SerienꢀModulꢀmitꢀTrench/FeldstopꢀIGBT3ꢀundꢀEmitterꢀControlled3ꢀDiodeꢀ
62mmꢀC-seriesꢀmoduleꢀwithꢀtrench/fieldstopꢀIGBT3ꢀandꢀEmitterꢀControlled3ꢀdiodeꢀ
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极-发射极电压
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
ꢀ
ꢀ
ꢀ
V
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
300
404
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
600
1450
+/-20
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 150
ꢀ W
栅极-发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极-发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
2,00 2,45
2,40
V
V
VCE sat
VGEth
QG
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
5,2
5,8
3,50
2,5
27,0
0,90
ꢀ
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
Cres
ICES
IGES
td on
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
3,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
0,28
0,30
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
0,08
0,10
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
0,80
1,00
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
0,12
0,20
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V, di/dt = 3600 A/µs
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
71,0
105
mJ
mJ
Eon
Eoff
关断损耗能量ꢀ(每脉冲)
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V, du/dt = 3500 V/µs
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
64,0
94,0
mJ
mJ
ꢀ
ꢀ
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
ISC
ꢀ
VCEmax = VCES -LsCE ·di/dt
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
tP ≤ 10 µs, Tvj = 125°C
1200
A
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,085 K/W
K/W
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,033
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
°C
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1700
300
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
600
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
14500
ꢀ A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
1,80 2,20
1,90
V
V
VF
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
350
380
A
A
VR = 900 V
VGE = -15 V
Tvj = 125°C
IRM
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
78,0
130
µC
µC
VR = 900 V
VGE = -15 V
Tvj = 125°C
Qr
反向恢复损耗(每脉冲)
Reverseꢀrecoveryꢀenergy
IF = 300 A, - diF/dt = 3600 A/µs (Tvj=125°C) Tvj = 25°C
40,0
72,0
mJ
mJ
VR = 900 V
VGE = -15 V
Tvj = 125°C
Erec
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,13 K/W
K/W
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,051
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
125
°C
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
3,4
Cu
ꢀ kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al2O3
20,0
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
11,0
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 400
ꢀ
ꢀ
min. typ. max.
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个模块ꢀ/ꢀperꢀmodule
RthCH
LsCE
RCC'+EE'
Tstg
ꢀ
0,01
K/W
nH
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
ꢀ
ꢀ
20
ꢀ
ꢀ
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
0,60
mΩ
储存温度
Storageꢀtemperature
ꢀ
-40
3,00
2,5
ꢀ
ꢀ
125 °C
6,00 Nm
5,0 Nm
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
-
-
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
重量
Weight
ꢀ
G
340
ꢀ
g
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ125°C
600
600
Tvj = 25°C
Tvj = 125°C
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
500
400
300
200
100
500
400
300
200
100
0
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀꢀIGBT,Inverter(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ4.7ꢀΩ,ꢀRGoffꢀ=ꢀ4.7ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
600
350
Tvj = 25°C
Tvj = 125°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
300
250
200
150
100
50
500
400
300
200
100
0
5
0
6
7
8
9
10
11
12
13
0
100
200
300
IC [A]
400
500
600
VGE [V]
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ(典型)
switchingꢀlossesꢀꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀꢀIGBT,ꢀ逆变器
transientꢀthermalꢀimpedanceꢀꢀIGBT,Inverter
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ300ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
600
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
ZthJC : IGBT
550
500
450
400
350
300
250
200
150
100
50
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,0085 0,0255 0,034 0,017
τi[s]:
0,01
0,04
0,06 0,3
0
0,001
0,001
0
5
10 15 20 25 30 35 40 45 50
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀꢀIGBT,ꢀ逆变器ꢀ(RBSOA)
正向偏压特性ꢀꢀ二极管,逆变器(典型)
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀꢀIGBT,Inverterꢀ(RBSOA)
forwardꢀcharacteristicꢀofꢀꢀDiode,ꢀInverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
IFꢀ=ꢀfꢀ(VF)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ4.7ꢀΩ,ꢀTvjꢀ=ꢀ125°C
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
600
500
400
300
200
100
0
500
400
300
200
100
0
0
200 400 600 800 1000 1200 1400 1600 1800
VCE [V]
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ(典型)
switchingꢀlossesꢀꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ4.7ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
IFꢀ=ꢀ300ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
100
100
Erec, Tvj = 125°C
Erec, Tvj = 125°C
90
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
100
200
300
IF [A]
400
500
600
0
5
10 15 20 25 30 35 40 45 50
RG [Ω]
瞬态热阻抗ꢀꢀ二极管,逆变器
transientꢀthermalꢀimpedanceꢀꢀDiode,ꢀInverter
ZthJCꢀ=ꢀfꢀ(t)
1
ZthJC : Diode
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,013 0,039 0,052 0,026
τi[s]:
0,01 0,04 0,06 0,3
0,001
0,001
0,01
0,1
t [s]
1
10
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
j
n
j
n
i
i
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF300R17KE3
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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-得到质量协议的结论
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如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Termsꢀ&ꢀConditionsꢀofꢀusage
ꢀ
Theꢀdataꢀcontainedꢀinꢀthisꢀproductꢀdataꢀsheetꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀYouꢀandꢀyourꢀtechnicalꢀdepartmentsꢀwill
haveꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproductꢀdataꢀwithꢀrespectꢀtoꢀsuch
application.
Thisꢀproductꢀdataꢀsheetꢀisꢀdescribingꢀtheꢀcharacteristicsꢀofꢀthisꢀproductꢀforꢀwhichꢀaꢀwarrantyꢀisꢀgranted.ꢀAnyꢀsuchꢀwarrantyꢀisꢀgranted
exclusivelyꢀpursuantꢀtheꢀtermsꢀandꢀconditionsꢀofꢀtheꢀsupplyꢀagreement.ꢀThereꢀwillꢀbeꢀnoꢀguaranteeꢀofꢀanyꢀkindꢀforꢀtheꢀproductꢀandꢀits
characteristics.ꢀTheꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀofꢀtheꢀmoduleꢀmustꢀbeꢀconsidered.
Shouldꢀyouꢀrequireꢀproductꢀinformationꢀinꢀexcessꢀofꢀtheꢀdataꢀgivenꢀinꢀthisꢀproductꢀdataꢀsheetꢀorꢀwhichꢀconcernsꢀtheꢀspecificꢀapplicationꢀof
ourꢀproduct,ꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyouꢀ(ꢀseeꢀꢀwww.infineon.comꢀ).ꢀForꢀthoseꢀthatꢀareꢀspecifically
interestedꢀweꢀmayꢀprovideꢀapplicationꢀnotes.ꢀ
Dueꢀtoꢀtechnicalꢀrequirementsꢀourꢀproductꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀpleaseꢀcontactꢀthe
salesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyou.
ShouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀProductꢀinꢀaviationꢀapplications,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀPlease
note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon
ꢀꢀtheꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.
Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀHS
approvedꢀby:ꢀWR
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
8
相关型号:
FF300R17KE3HOSA1
Insulated Gate Bipolar Transistor, 404A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
INFINEON
FF300R17KE4HOSA1
Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
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FF300R17KE4PHOSA1
Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
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FF300R17ME3BOSA1
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
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FF300R17ME4B11BOSA1
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
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FF300R17ME4BOSA1
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
INFINEON
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