FF33MR12W1M1H_B11_技术文档

FF33MR12W1M1H_B11

EasyDUAL module

Preliminary datasheet

EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC

™

Features

• Electrical features

- V_DSS= 1200 V

- I_DN= 25 A / I_DRM= 50 A

- Low inductive design

- Low switching losses

• Mechanical features

- Rugged mounting due to integrated mounting clamps

- PressFIT contact technology

- Integrated NTC temperature sensor

Potential applications

• High-frequency switching application

• DC/DC converter

• Motor drives

• UPS systems

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

J

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

1

2

3

4

5

6

7

8

Datasheet

2

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

1 Package

1

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

3.0

Unit

Isolation test voltage

Internal isolation

Creepage distance

Clearance

V_ISOL

RMS, f = 50 Hz, t = 1 min

kV

basic insulation (class 1, IEC 61140)

Al₂O₃

11.5

6.3

d_Creepterminal to heatsink

mm

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

10.0

5.0

Clearance

Comparative tracking

index

> 200

Relative thermal index

(electrical)

RTI

housing

140

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

18

Unit

Min.

Max.

Stray inductance module

L_sCE

nH

Module lead resistance,

terminals - chip

R_CC'+EE'T_H= 25 °C, per switch

5.35

mΩ

Storage temperature

Mounting force per clamp

Weight

T_stg

F

-40

20

125

50

°C

N

g

G

24

Note:

The current under continuous operation is limited to 25 A rms per connector pin.

2

MOSFET

Table 3

Maximum rated values

Parameter

Symbol Note or test condition

Values

1200

25

Unit

Drain-source voltage

V_DSS

I_DDC

T_vj= 25 °C

T_H= 85 °C

V

A

Continuous DC drain

current

T_vj= 175 °C, V_GS= 18 V

Repetitive peak drain

current

I_DRM

V_GS

verified by design, t_plimited by T_vjmax

50

A

V

Gate-source voltage, max.

transient voltage

D < 0.01

-10/23

-7/20

Gate-source voltage, max.

static voltage

Datasheet

3

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FF33MR12W1M1H_B11

EasyDUAL module

2 MOSFET

Table 4

Recommended values

Parameter

Symbol Note or test condition

Values

15...18

-5...0

Unit

On-state gate voltage

Oﬀ-state gate voltage

V_GS(on)

V_GS(oﬀ)

V

Table 5

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Drain-source on-resistance R_DS(on)I_D= 25 A

V_GS= 18 V,

T_vj= 25 °C

32.3

mΩ

V_GS= 18 V,

T_vj= 125 °C

52.2

69.4

38.8

4.3

V_GS= 18 V,

T_vj= 175 °C

V_GS= 15 V,

T_vj= 25 °C

Gate threshold voltage

V_GS(th)I_D= 10 mA, V_DS= V_GS, T_vj= 25 °C, (tested afeꢀ 3.45

5.15

V

1ms pulse at V_GS= +20 V)

Total gate charge

Internal gate resistor

Input capacitance

Q_G

R_Gint

C_ISS

V_DD= 800 V, V_GS= -3/18 V

T_vj= 25 °C

0.074

8.2

µC

Ω

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

2.2

nF

Output capacitance

C_OSS

C_rss

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

0.105

0.007

nF

Reverse transfer

capacitance

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

C_OSSstored energy

E_OSS

I_DSS

V_DS= 800 V, V_GS= -3/18 V, T_vj= 25 °C

43

µJ

µA

Drain-source leakage

current

V_DS= 1200 V, V_GS= -3 V

T_vj= 25 °C

0.015

110

400

Gate-source leakage

current

I_GSS

V_DS= 0 V, T_vj= 25 °C

V_GS= 20 V

nA

ns

Turn-on delay time

(inductive load)

t_{d on}

I_D= 25 A, R_Gon= 8.2 Ω,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

37

31

32

V_DD= 600 V, V_GS= -3/18 V

Rise time (inductive load)

t_r

I_D= 25 A, R_Gon= 8.2 Ω,

V_DD= 600 V, V_GS= -3/18 V

ns

(table continues...)

Datasheet

4

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

3 Body diode

Table 5

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

58

Unit

Min.

Max.

Tuꢀn-oﬀ delay time

t_{d oﬀ}

I_D= 25 A, R_Goﬀ= 4.7 Ω,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

ns

(inductive load)

V_DD= 600 V, V_GS= -3/18 V

65

67

Fall time (inductive load)

t_f

I_D= 25 A, R_Goﬀ= 4.7 Ω,

V_DD= 600 V, V_GS= -3/18 V

17

ns

mJ

A

17

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_D= 25 A, V_DD= 600 V,

0.341

0.418

0.471

0.117

0.123

0.127

210

L = 35 nH, V_GS= -3/18 V,

σ

R_Gon= 8.2 Ω, di/dt = 1.88

kA/µs (T_vj= 175 °C)

Tuꢀn-oﬀ energy loss per

pulse

I_D= 25 A, V_DD= 600 V,

L = 35 nH, V_GS= -3/18 V,

σ

R_Goﬀ= 4.7 Ω, dv/dt = 28.2

kV/µs (T_vj= 175 °C)

SC data

V_GS= -5/15 V, V_DD= 800 V, t_P= 2 µs,

V_DSmax= V_DSS-L_sDS*di/dt, T_vj= 25 °C

R_G= 10 Ω

t_P= 2 µs,

T_vj= 150 °C

205

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per MOSFET, λ_grease= 1 W/(m·K)

1.54

K/W

°C

Temperature under

switching conditions

-40

175

Note:

The selection of positive and negative gate-source voltages impacts losses and the long-term behavior

of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN

2021-13 must be considered to ensure sound operation of the device over the planned lifetime.

T_vj,op> 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed

specifications, please refer to AN 2021-13.

3

Body diode

Table 6

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

DC body diode forward

current

I_SD

T_vj= 175 °C, V_GS= -3 V

T_H= 85 °C

10

A

Datasheet

5

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

4 NTC-Thermistor

Table 7

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

4.2

Unit

Min.

Max.

Forward voltage

V_SD

I_SD= 25 A, V_GS= -3 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

5.35

V

3.9

3.8

4

NTC-Thermistor

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

5

Unit

Min.

Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

kΩ

%

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

5

20

mW

K

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

K

B-value

K

Note:

Specification according to the valid application note.

Datasheet

6

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

5 Characteristics diagrams

5

Characteristics diagrams

output characteristic (typical), MOSFET

I_D= f(V_DS

output characteristic (typical), MOSFET

I_D= f(V_DS

)

V_GS= 18 V

V_GS= 15 V

50

45

40

35

30

25

20

15

10

5

45

40

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Drain source on-resistance (typical), MOSFET

R_DS(on)= f(I_D)

R_DS(on)= f(T_vj)

V_GS= 18 V

I_D= 25 A

80

75

70

65

60

55

50

45

40

35

30

25

80

75

70

65

60

55

50

45

40

35

30

25

-50 -25

0

25

50

75 100 125 150 175

0

5

10 15 20 25 30 35 40 45 50

Datasheet

7

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

5 Characteristics diagrams

Output characteristic field (typical), MOSFET

Transfer characteristic (typical), MOSFET

I_D= f(V_GS

I_D= f(V_DS

)

T_vj= 175 °C

V_DS= 20 V

50

45

40

35

30

25

20

15

10

5

45

40

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

4

5

6

7

8

9

10

11

Gate-source threshold voltage (typical), MOSFET

V_GS(th)= f(T_vj)

Gate charge characteristic (typical), MOSFET

V_GS= f(Q_G)

V_GS= V_DS

I_D= 25 A, T_vj= 25 °C

5.0

4.8

4.6

4.4

4.2

4.0

3.8

3.6

3.4

18

15

12

9

6

3

0

-3

-50 -25

0

25

50

75 100 125 150 175

0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08

Datasheet

8

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

5 Characteristics diagrams

Capacity characteristic (typical), MOSFET

Forward characteristic body diode (typical), MOSFET

I_SD= f(V_SD

C = f(V_DS

)

T_vj= 25 °C, f = 100 kHz, V_GS= 0 V

T_vj= 25 °C

10

50

45

40

35

30

25

20

15

10

5

1

0.1

0.01

0.001

0

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Forward voltage of body diode (typical), MOSFET

V_SD= f(T_vj)

Switching losses (typical), MOSFET

E = f(I_D)

I_SD= 25 A

R_Goﬀ= 4.7 Ω, R_Gon= 8.2 Ω, V_DD= 600 V, V_GS= -3/18 V

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

25

50

75

100

125

150

175

0

5

10 15 20 25 30 35 40 45 50

Datasheet

9

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

5 Characteristics diagrams

Switching losses (typical), MOSFET

E = f(R_G)

Switching times (typical), MOSFET

t = f(I_D)

V_DD= 600 V, I_D= 25 A, V_GS= -3/18 V

R_Goﬀ= 4.7 Ω, R_Gon= 8.2 Ω, V_DD= 600 V, T_vj= 175 °C, V_GS

-3/18 V

=

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1

0.01

0

10

20

30

40

50

60

70

80

90

0

5

10 15 20 25 30 35 40 45 50

Switching times (typical), MOSFET

t = f(R_G)

Current slope (typical), MOSFET

di/dt = f(R_G)

V_DD= 600 V, I_D= 25 A, T_vj= 175 °C, V_GS= -3/18 V

V_DD= 600 V, I_D= 25 A, V_GS= -3/18 V

1

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1

0.01

0

10

20

30

40

50

60

70

80

90

0

10

20

30

40

50

60

70

80

90

Datasheet

10

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2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

5 Characteristics diagrams

Voltage slope (typical), MOSFET

dv/dt = f(R_G)

Reverse bias safe operating area (RBSOA), MOSFET

I_D= f(V_DS

)

V_DD= 600 V, I_D= 25 A, V_GS= -3/18 V

R_Goﬀ= 4.7 Ω, T_vj= 175 °C, V_GS= -3/18 V

30

28

26

24

22

20

18

16

14

12

10

8

60

50

40

30

20

10

0

6

4

2

0

5

10 15 20 25 30 35 40 45 50

0

200

400

600

800

1000 1200 1400

Transient thermal impedance , MOSFET

Z_th= f(t)

Temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

10

100000

10000

1000

100

1

10

0.1

0.001

0

25

50

75

100

125

150

175

0.01

0.1

1

10

Datasheet

11

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

6 Circuit diagram

6

Circuit diagram

J

Figure 1

Datasheet

12

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

7 Package outlines

7

Package outlines

IGBT

0001

Infineon

G1608

FF33MR12W1M1H_B11

TM

CoolSiC

Figure 2

Datasheet

13

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

8 Module label code

8

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

15

30

Example

71549142846550549911530

Figure 3

Datasheet

14

Revision 0.20

2022-12-06

FF33MR12W1M1H_B11

EasyDUAL module

Revision history

Document revision

Date of release Description of changes

0.10

0.20

2022-07-29

2022-12-06

Initial version

Preliminary datasheet

Datasheet

15

Revision 0.20

2022-12-06

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-12-06

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgaꢀantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

©

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-ABE750-002

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	FF33MR12W1M1H_B11
厂家：	Infineon
描述：	AlN
文件：	总16页 (文件大小：674K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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