FF400R07A01E3_S6 [INFINEON]

Double Side Cooled;
FF400R07A01E3_S6
型号: FF400R07A01E3_S6
厂家: Infineon    Infineon
描述:

Double Side Cooled

文件: 总13页 (文件大小:729K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DoubleꢀSideꢀCooledꢀModule  
FF400R07A01E3_S6  
FinalꢀDataꢀSheet  
V3.4,ꢀ2020-04-15  
AutomotiveꢀHighꢀPower  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription  
VCES = 700 V  
IC = 400 A  
TypicalꢀApplications  
Description  
• AutomotiveꢀApplications  
• HybridꢀElectricalꢀVehiclesꢀ(H)EV  
The HybridPACKTM DSC S1 is a very compact  
half-bridge module targeting hybrid and electric  
vehicles.  
The module is based on Infineon’s long-term  
experience developing IGBT power modules and  
Trench-Field-Stop IGBTs including matching diodes  
with enhanced softness. Additionally, on-die  
integrated current sensor and temperature sensor  
allow precise monitoring of IGBT state. These  
features enable enhanced protection and intelligent  
control of the system.  
ElectricalꢀFeatures  
• IncreasedꢀBlockingꢀVoltageꢀCapabilityꢀtoꢀ700V  
• IntegratedꢀCurrentꢀSensor  
• IntegratedꢀTemperatureꢀSensor  
• LowꢀInductiveꢀDesign  
• LowꢀSwitchingꢀLosses  
• Tvjꢀopꢀ=ꢀ150°C  
The innovative and small package is designed for  
Double Sided Cooling (DSC) with superior thermal  
performance. The low stray inductance and  
increased blocking voltage support the design of  
systems with a very high efficiency. Furthermore,  
new material combinations and assembly  
technologies enable best thermal and electrical  
performance at highest reliability and mechanical  
robustness.  
Short-time extended Operation Temperature  
Tvjꢀopꢀ=ꢀ175°C  
MechanicalꢀFeatures  
• 2.5kVꢀACꢀ1minꢀInsulation  
• Doubleꢀsidedꢀcooling  
• Compactꢀdesign  
• RoHSꢀcompliant  
ProductꢀName  
OrderingꢀCode  
SP001661226  
FF400R07A01E3_S6  
Final Data Sheet  
2
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
2ꢀꢀꢀꢀꢀIGBT,Inverter  
2.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues  
Parameter  
Conditions  
Symbol  
VCES  
IC nom  
ICRM  
Value  
700  
Unit  
V
Collector-emitterꢀvoltage  
Tvj = 25°C  
ContinuousꢀDCꢀcollectorꢀcurrent  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
Totalꢀpowerꢀdissipation  
TC = 75°C, Tvj max = 175°C  
tP = 1 ms  
400  
A
800  
A
TC = 25°C, Tvj max = 175°C  
Ptot  
1500  
+/-20  
W
V
Gate-emitterꢀpeakꢀvoltage  
VGES  
2.2ꢀꢀꢀꢀCharacteristicꢀValues  
min. typ. max.  
Collector-emitterꢀsaturationꢀvoltage  
IC = 400 A, VGE = 15 V  
IC = 400 A, VGE = 15 V  
IC = 400 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
1.65 2.30  
1.90  
2.00  
VCE sat  
V
Gateꢀthresholdꢀvoltage  
Gateꢀcharge  
IC = 4.85 mA, VCE = VGE  
VGE = -15 V ... 15 V  
Tvj = 25°C  
VGEth  
QG  
5.00 5.80 6.50  
V
µC  
2.90  
0.0  
Internalꢀgateꢀresistor  
Tvj = 25°C  
Tvj = 25°C  
Tvj = 25°C  
Tvj = 25°C  
Tvj = 25°C  
RGint  
Cies  
Cres  
ICES  
IGES  
Inputꢀcapacitance  
f = 1 MHz, VCE = 25 V, VGE = 0 V  
f = 1 MHz, VCE = 25 V, VGE = 0 V  
VCE = 450 V, VGE = 0 V  
18.0  
0.50  
0.1  
nF  
nF  
mA  
nA  
Reverseꢀtransferꢀcapacitance  
Collector-emitterꢀcut-offꢀcurrent  
Gate-emitterꢀleakageꢀcurrent  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
VCE = 0 V, VGE = 20 V  
400  
IC = 400 A, VCE = 300 V  
VGE = -8/+15 V  
RGon = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0.06  
0.06  
0.06  
td on  
µs  
µs  
µs  
µs  
Riseꢀtime,ꢀinductiveꢀload  
IC = 400 A, VCE = 300 V  
VGE = -8/+15 V  
RGon = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0.08  
0.08  
0.08  
tr  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
Fallꢀtime,ꢀinductiveꢀload  
IC = 400 A, VCE = 300 V  
VGE = -8/+15 V  
RGoff = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0.43  
0.44  
0.48  
td off  
IC = 400 A, VCE = 300 V  
VGE = -8/+15 V  
RGoff = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0.04  
0.04  
0.05  
tf  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 400 A, VCE = 300 V, LS = 25 nH  
VGE = -8/+15 V  
RGon = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
5.70  
7.40  
7.90  
Eon  
mJ  
di/dt = 5.1 kA/µs (Tvj = 150°C)  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
SCꢀdata  
IC = 400 A, VCE = 300 V, LS = 25 nH  
VGE = -8/+15 V  
RGoff = 3.6 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
14.5  
16.5  
18.0  
Eoff  
mJ  
A
du/dt = 3.0 kV/µs (Tvj = 150°C)  
VGE 15 V, VCC = 360 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 6 µs, Tvj = 150°C  
1900  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
perꢀIGBT  
RthJC  
0.1001) K/W  
perꢀIGBT  
0.1401)  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
RthCH  
K/W  
ClampingꢀForceꢀFꢀ=ꢀ700N  
Temperatureꢀunderꢀswitchingꢀconditions  
top continuous  
-40  
150  
150  
°C  
for 18s within a period of 600s, occurrence maximum 200  
times over lifetime  
Tvj op  
175  
1) with double sided cooling, evaluation according to HybridPackTM DSC application note  
Final Data Sheet  
3
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
3ꢀꢀꢀꢀꢀDiode,ꢀInverter  
3.1ꢀꢀꢀꢀMaximumꢀRatedꢀValues  
Parameter  
Conditions  
Symbol  
VRRM  
IF  
Value  
700  
Unit  
V
Repetitiveꢀpeakꢀreverseꢀvoltage  
ContinuousꢀDCꢀforwardꢀcurrent  
Repetitiveꢀpeakꢀforwardꢀcurrent  
I²tꢀ-ꢀvalue  
Tvj = 25°C  
400  
A
tP = 1 ms  
IFRM  
I²t  
800  
A
VR = 0 V, tP = 10 ms, Tvj = 125°C  
9000  
A²s  
3.2ꢀꢀꢀꢀCharacteristicꢀValues  
min. typ. max.  
Forwardꢀvoltage  
IF = 400 A, VGE = 0 V  
IF = 400 A, VGE = 0 V  
IF = 400 A, VGE = 0 V  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
1.95 2.55  
1.84  
1.80  
VF  
IRM  
Qr  
V
A
Peakꢀreverseꢀrecoveryꢀcurrent  
Recoveredꢀcharge  
IF = 400 A, - diF/dt = 5000 A/µs (Tvj = 150°C) Tvj = 25°C  
VR = 300 V  
VGE = -8 V  
135  
210  
220  
Tvj = 125°C  
Tvj = 150°C  
IF = 400 A, - diF/dt = 5000 A/µs (Tvj = 150°C) Tvj = 25°C  
VR = 300 V  
VGE = -8 V  
12.0  
23.0  
27.0  
Tvj = 125°C  
Tvj = 150°C  
µC  
mJ  
Reverseꢀrecoveryꢀenergy  
IF = 400 A, - diF/dt = 5000 A/µs (Tvj = 150°C) Tvj = 25°C  
2.80  
5.80  
6.60  
VR = 300 V  
VGE = -8 V  
Tvj = 125°C  
Tvj = 150°C  
Erec  
RthJC  
RthCH  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
perꢀdiode  
0.1501) K/W  
K/W  
perꢀdiode  
0.2001)  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
ClampingꢀForceꢀFꢀ=ꢀ700N  
Temperatureꢀunderꢀswitchingꢀconditions  
top continuous  
-40  
150  
150  
°C  
for 18s within a period of 600s, occurrence maximum 200  
times over lifetime  
Tvj op  
175  
4ꢀꢀꢀꢀꢀModule  
Parameter  
Conditions  
Symbol  
Value  
2.5  
Unit  
Isolationꢀtestꢀvoltage  
Materialꢀofꢀmoduleꢀbaseplate  
Internalꢀisolation  
RMS, f = 50 Hz, t = 1 min.  
VISOL  
kV  
Cu  
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)  
Al2O3  
Creepageꢀdistance  
terminalꢀtoꢀheatsink  
terminalꢀtoꢀterminal  
dCreep  
mm  
3.5  
Clearance  
terminalꢀtoꢀheatsink  
terminalꢀtoꢀterminal  
dClear  
CTI  
mm  
3.5  
Comperativeꢀtrackingꢀindex  
> 600  
min. typ. max.  
15  
Strayꢀinductanceꢀmodule  
Storageꢀtemperature  
Terminalꢀconnectionꢀtorque  
Mounting force per clamp  
Weight  
LsCE  
Tstg  
M
nH  
-40  
125 °C  
Nm  
ScrewꢀM5  
-
-
F
900  
N
g
G
30  
5ꢀꢀꢀꢀꢀTemperatureꢀSensor  
Parameter  
Conditions  
Symbol Min Typ Max Unit  
Forwardꢀvoltage  
ITS = 1.00 mA, Tvj = 150°C  
ITS = 1.00 mA, Tvj = 25°C  
2.120  
2.910  
VTS  
V
1) with double sided cooling, evaluation according to HybridPackTM DSC application note  
Final Data Sheet  
4
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
6ꢀꢀꢀꢀꢀCurrentꢀSensor  
Parameter  
Conditions  
Symbol Min Typ Max Unit  
Outputꢀvoltage  
VCE = 2.35 V, IC = 800 A  
Rsense = 1.60 , Tvj = 25°C  
VGE = 15 V  
Vsense  
0.64  
V
Final Data Sheet  
5
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
7ꢀꢀꢀꢀꢀCharacteristicsꢀDiagrams  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
ICꢀ=ꢀfꢀ(VCE  
ICꢀ=ꢀfꢀ(VCE  
)
)
VGEꢀ=ꢀ15ꢀV  
Tvjꢀ=ꢀ150°C  
800  
800  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
VGE = 19V  
VGE = 17V  
VGE = 15V  
VGE = 13V  
VGE = 11V  
VGE = 9V  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0  
0,0  
0,5  
1,0  
1,5  
2,0  
VCE [V]  
2,5  
3,0  
3,5  
4,0  
VCE [V]  
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
ICꢀ=ꢀfꢀ(VGE  
)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)  
VCEꢀ=ꢀ20ꢀV  
VGEꢀ=ꢀ-8ꢀ/ꢀ+15ꢀV,ꢀRGonꢀ=ꢀ3.6ꢀ,ꢀRGoffꢀ=ꢀ3.6ꢀ,ꢀVCEꢀ=ꢀ300ꢀV  
800  
50  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
Eon, Tvj = 125°C  
Eoff, Tvj = 125°C  
Eon, Tvj = 150°C  
Eoff, Tvj = 150°C  
45  
700  
600  
500  
400  
300  
200  
100  
40  
35  
30  
25  
20  
15  
10  
5
0
5
0
6
7
8
9
10  
11  
12  
13  
0
100  
200  
300  
400  
IC [A]  
500  
600  
700  
800  
VGE [V]  
Final Data Sheet  
6
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)  
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)  
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ  
ZthJHꢀ=ꢀfꢀ(t)  
VGEꢀ=ꢀ-8ꢀ/ꢀ+15ꢀV,ꢀICꢀ=ꢀ400ꢀA,ꢀVCEꢀ=ꢀ300ꢀV  
35  
1
Eon, Tvj = 125°C  
Eoff, Tvj = 125°C  
Eon, Tvj = 150°C  
ZthJH : IGBT  
30  
Eoff, Tvj = 150°C  
25  
20  
15  
10  
5
0,1  
i:  
1
2
3
4
ri[K/W]: 0,0158 0,0348 0,132 0,0531  
τi[s]:  
0,001 0,0214 0,1799 0,7798  
0
0,01  
0,01  
3
4
5
6
7
8
9
10  
11  
12  
0,1  
1
10  
RG []  
t [s]  
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)  
ICꢀ=ꢀfꢀ(VCE  
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)  
IFꢀ=ꢀfꢀ(VF)  
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ3.6ꢀ,ꢀTvjꢀ=ꢀ150°C  
900  
800  
Ic, Modul  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
800  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0
100  
200  
300  
400  
500  
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6  
VCE [V]  
VF [V]  
Final Data Sheet  
7
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
Erecꢀ=ꢀfꢀ(IF)  
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)  
Erecꢀ=ꢀfꢀ(RG)  
RGonꢀ=ꢀ3.6ꢀ,ꢀVCEꢀ=ꢀ300ꢀV  
IFꢀ=ꢀ400ꢀA,ꢀVCEꢀ=ꢀ300ꢀV  
10  
7
6
5
4
3
2
1
0
Erec, Tvj = 125°C  
Erec, Tvj = 150°C  
Erec, Tvj = 125°C  
Erec, Tvj = 150°C  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
IF [A]  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
10 11 12  
RG []  
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ  
ZthJHꢀ=ꢀfꢀ(t)  
1
ZthJH : Diode  
0,1  
0,01  
i:  
ri[K/W]: 0,0525 0,0217 0,1714 0,0983  
τi[s]: 0,0186 0,0525 0,135 0,5303  
1
2
3
4
0,001  
0,001  
0,01  
0,1  
t [s]  
1
10  
Final Data Sheet  
8
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
8ꢀꢀꢀꢀꢀCircuitꢀdiagram  
P in Numbe r  
S ymbol  
P
I/O  
Function  
1
DC Supply (+)  
DC Supply (-)  
AC Output  
Input  
Positive Supply  
2
N
Negative Supply  
3
U
U Phase Output  
4
T+L  
T-L  
EL  
Temperature Sensor Plus Low Side  
Temperature Sensor Minus Low Side  
IGBT Emitter Output Low Side  
IGBT Current Sensor Output Low Side  
Gate Input Low Side  
5
Output  
Output  
Output  
Input  
6
7
CSL  
GL  
8
9
T+H  
T-H  
EH  
Input  
Temperature Sensor Plus High Side  
Temperature Sensor Minus High Side  
IGBT Emitter Output High Side  
IGBT Current Sensor output High Side  
Gate Input High Side  
10  
11  
12  
13  
14  
Output  
Output  
Output  
Input  
CSH  
GH  
PS  
Output  
P-Terminal Voltage Sensing / IGBT Collector Output  
Final Data Sheet  
9
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
9ꢀꢀꢀꢀꢀPackageꢀoutlines  
Final Data Sheet  
10  
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
RevisionꢀHistory  
Major changes since previous revision  
Revision History  
Reference  
V1.0  
Date  
Description  
2015-03-26  
2015-04-07  
2016-02-02  
2016-11-07  
2016-11-08  
2016-12-13  
2017-07-28  
2020-04-15  
Initial Version  
V1.1  
Extension of target data  
Update of target data  
Final Datasheet  
V2.0  
V3.0  
V3.1  
Change of product name in description  
Changes in description  
Update mechanical drawing  
Correction of package outlines  
V3.2  
V3.3  
V3.4  
Final Data Sheet  
11  
V3.4,ꢀꢀ2020-04-15  
FF400R07A01E3_S6  
DoubleꢀSideꢀCooledꢀModule  
Termsꢀ&ꢀConditionsꢀofꢀusage  
Editionꢀ2018-08-01  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMunich,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWithꢀrespectꢀtoꢀany  
examplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀdevice,ꢀInfineon  
Technologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation,ꢀwarrantiesꢀofꢀnon-infringementꢀof  
intellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀprices,ꢀpleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice  
(http://www.infineon.com)  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,ꢀpleaseꢀcontactꢀthe  
nearestꢀInfineonꢀTechnologiesꢀOffice.  
Theseꢀcomponentsꢀareꢀnotꢀdesignedꢀforꢀ“specialꢀapplications”ꢀthatꢀdemandꢀextremelyꢀhighꢀreliabilityꢀorꢀsafetyꢀsuchꢀasꢀaerospace,ꢀdefenseꢀorꢀlife  
supportꢀdevicesꢀorꢀsystemsꢀ(ClassꢀIIIꢀmedicalꢀdevices).ꢀIfꢀyouꢀintendꢀtoꢀuseꢀtheꢀcomponentsꢀinꢀanyꢀofꢀtheseꢀspecialꢀapplications,ꢀpleaseꢀcontact  
yourꢀlocalꢀrepresentativeꢀatꢀInternationalꢀRectifierꢀHiRelꢀProducts,ꢀInc.ꢀorꢀtheꢀInfineonꢀsupportꢀ(https://www.infineon.com/support)ꢀtoꢀreview  
productꢀrequirementsꢀandꢀreliabilityꢀtesting.  
InfineonꢀTechnologiesꢀcomponentsꢀmayꢀbeꢀusedꢀinꢀspecialꢀapplicationsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies.ꢀClass  
IIIꢀmedicalꢀdevicesꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀthey  
fail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Trademarks  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCIPURSE™,ꢀEconoPACK™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,  
DI-POL™,ꢀEasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPIM™,ꢀEconoPACK™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,  
HybridPACK™,ꢀI²RF™,ꢀISOFACE™,ꢀIsoPACK™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPRO-SIL™,ꢀPROFET™,ꢀRASIC™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSINDRION™,  
SIPMOS™,ꢀSmartLEWIS™,ꢀSOLIDꢀFLASH™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
OtherꢀTrademarks  
AdvanceꢀDesignꢀSystem™ꢀ(ADS)ꢀofꢀAgilentꢀTechnologies,ꢀAMBA™,ꢀARM™,ꢀMULTI-ICE™,ꢀKEIL™,ꢀPRIMECELL™,ꢀREALVIEW™,ꢀTHUMB™,  
µVision™ꢀofꢀARMꢀLimited,ꢀUK.ꢀAUTOSAR™ꢀisꢀlicensedꢀbyꢀAUTOSARꢀdevelopmentꢀpartnership.ꢀBluetooth™ꢀofꢀBluetoothꢀSIGꢀInc.ꢀCAT-iq™ꢀof  
DECTꢀForum.ꢀCOLOSSUS™,ꢀFirstGPS™ꢀofꢀTrimbleꢀNavigationꢀLtd.ꢀEMV™ꢀofꢀEMVCo,ꢀLLCꢀ(VisaꢀHoldingsꢀInc.).ꢀEPCOS™ꢀofꢀEpcosꢀAG.  
FLEXGO™ꢀofꢀMicrosoftꢀCorporation.ꢀFlexRay™ꢀisꢀlicensedꢀbyꢀFlexRayꢀConsortium.ꢀHYPERTERMINAL™ꢀofꢀHilgraeveꢀIncorporated.ꢀIEC™ꢀof  
CommissionꢀElectrotechniqueꢀInternationale.ꢀIrDA™ꢀofꢀInfraredꢀDataꢀAssociationꢀCorporation.ꢀISO™ꢀofꢀINTERNATIONALꢀORGANIZATION  
FORꢀSTANDARDIZATION.ꢀMATLAB™ꢀofꢀMathWorks,ꢀInc.ꢀMAXIM™ꢀofꢀMaximꢀIntegratedꢀProducts,ꢀInc.ꢀMICROTEC™,ꢀNUCLEUS™ꢀofꢀMentor  
GraphicsꢀCorporation.ꢀMIPI™ꢀofꢀMIPIꢀAlliance,ꢀInc.ꢀMIPS™ꢀofꢀMIPSꢀTechnologies,ꢀInc.,ꢀUSA.ꢀmuRata™ꢀofꢀMURATAꢀMANUFACTURINGꢀCO.,  
MICROWAVEꢀOFFICE™ꢀ(MWO)ꢀofꢀAppliedꢀWaveꢀResearchꢀInc.,ꢀOmniVision™ꢀofꢀOmniVisionꢀTechnologies,ꢀInc.ꢀOpenwave™ꢀOpenwave  
SystemsꢀInc.ꢀREDꢀHAT™ꢀRedꢀHat,ꢀInc.ꢀRFMD™ꢀRFꢀMicroꢀDevices,ꢀInc.ꢀSIRIUS™ꢀofꢀSiriusꢀSatelliteꢀRadioꢀInc.ꢀSOLARIS™ꢀofꢀSun  
Microsystems,ꢀInc.ꢀSPANSION™ꢀofꢀSpansionꢀLLCꢀLtd.ꢀSymbian™ꢀofꢀSymbianꢀSoftwareꢀLimited.ꢀTAIYOꢀYUDEN™ꢀofꢀTaiyoꢀYudenꢀCo.  
TEAKLITE™ꢀofꢀCEVA,ꢀInc.ꢀTEKTRONIX™ꢀofꢀTektronixꢀInc.ꢀTOKO™ꢀofꢀTOKOꢀKABUSHIKIꢀKAISHAꢀTA.ꢀUNIX™ꢀofꢀX/OpenꢀCompanyꢀLimited.  
VERILOG™,ꢀPALLADIUM™ꢀofꢀCadenceꢀDesignꢀSystems,ꢀInc.ꢀVLYNQ™ꢀofꢀTexasꢀInstrumentsꢀIncorporated.ꢀVXWORKS™,ꢀWINDꢀRIVER™ꢀof  
WINDꢀRIVERꢀSYSTEMS,ꢀINC.ꢀZETEX™ꢀofꢀDiodesꢀZetexꢀLimited.  
Last update  
2011-11-11  
Final Data Sheet  
12  
V3.4,ꢀꢀ2020-04-15  
wꢀwꢀwꢀ.ꢀiꢀnꢀfꢀiꢀnꢀeꢀoꢀnꢀ.ꢀcꢀoꢀm  
PublishedꢀbyꢀInfineonꢀTechnologiesꢀAG  

相关型号:

FF400R07KE4

62mm C-Series module with trench/fieldstopp IGBT4 and Emitter Controlled Diode
INFINEON

FF400R12KE3

IGBT-inverter
EUPEC

FF400R12KE3

62mm C-Series module with trench/fieldstopp IGBT3 and EmCon High Efficiency diode
INFINEON

FF400R12KE3_B2

Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
INFINEON

FF400R12KF1

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 400A I(C) | M:HL124HW114
ETC

FF400R12KF4

IGBT-Modules
EUPEC

FF400R12KF4NOSA1

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
INFINEON

FF400R12KT3

暂无描述
INFINEON

FF400R12KT3EHOSA1

Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
INFINEON

FF400R12KT3HOSA1

Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
INFINEON

FF400R12KT3PEHOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
INFINEON

FF400R12KT3P_E

Insulated Gate Bipolar Transistor,
INFINEON