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FF600R07ME4B11BOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES, N-Channel, MODULE-11;

FF600R07ME4B11BOSA1


元器件型号：	FF600R07ME4B11BOSA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES, N-Channel, MODULE-11 局域网栅功率控制晶体管
PDF文件：	总9页 (文件大小：676K)
下载文档：	下载PDF数据表文档文件
型号参数：FF600R07ME4B11BOSA1参数

FF600R12IE4

PrimePACK™2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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245 INFINEON

FF600R12IE4BOSA1

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF600R12IE4VBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

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0 INFINEON

FF600R12IP4

PrimePACK™2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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96 INFINEON

FF600R12IP4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11

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1 INFINEON

FF600R12IS4F

PRIMEPACK 2 MODULE WITH FAST IGBT2 AND SIC DIODE FOR HIGH FREQUENCY SWITCHING AND NTC

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54 INFINEON

FF600R12IS4FBOSA1

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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3 INFINEON

FF600R12KE3

IGBT-Modules

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125 EUPEC

FF600R12KE4EBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7

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18 INFINEON

FF600R12KF1

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 600A I(C) | M:HL124HW114

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29 ETC

FF600R12KF4

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 600A I(C)

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86 ETC

FF600R12KL4C

IGBT Module

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35 ETC

FF600R12ME4

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC

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727 INFINEON

FF600R12ME4_B11

EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC

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76 INFINEON

FF600R12ME4A_B11

High Power and Thermal Cycling Capability

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3 INFINEON

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