FF800R12KE7 [INFINEON]

62 mm 1200 V, 800 A 低饱和压降的Fast trench IGBT半桥模块，采用TRENCHSTOP™ IGBT7和发射极控制第7代二极管。也可提供预涂导热介质版本。;


型号：	FF800R12KE7
厂家：	Infineon
描述：	62 mm 1200 V, 800 A 低饱和压降的Fast trench IGBT半桥模块，采用TRENCHSTOP™ IGBT7和发射极控制第7代二极管。也可提供预涂导热介质版本。双极性晶体管二极管
文件：	总15页 (文件大小：723K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FF800R12KE7

62 mm C-Series module

™

62 mm C-Series module with TRENCHSTOP IGBT7 and emitter controlled 7 diode

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 800 A / I_CRM= 1600 A

- TRENCHSTOP^TMIGBT7

- V_CE,satwith positive temperature coeﬀicient

• Mechanical features

- Standard housing

- 4 kV AC 1 min insulation

- High creepage and clearance distances

- High power density

- Isolated base plate

- Package with CTI > 400

Potential applications

• Three-level applications

• Commercial agriculture vehicles

• High-power converters

• Motor drives

• Servo drives

• Solar applications

• UPS systems

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

4.0

Unit

Isolation test voltage

V_ISOL

RMS, f = 50 Hz, t = 60 s

Material of module

baseplate

Internal isolation

Creepage distance

Clearance

basic insulation (class 1, IEC 61140)

Al₂O₃

29.0

23.0

11.0

> 400

d_Creepterminal to heatsink

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

Clearance

Comparative tracking

index

Relative thermal index

(electrical)

RTI

housing

140

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Stray inductance module

L_sCE

Module lead resistance,

terminals - chip

R_CC'+EE'T_C=25°C, per switch

0.5

mΩ

Storage temperature

T_stg

-40

125

°C

Mounting torque for

module mounting

- Mounting according to M5, Screw

valid application note

Terminal connection

torque

- Mounting according to M6, Screw

valid application note

2.5

Weight

340

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

I_CDC

Parameter

Values

1200

800

Unit

Collector-emitter voltage

T_vj= 25 °C

T_C= 90 °C

Continuous DC collector

current

T_{vj max}= 175 °C

Maximum RMS module DC-

terminal current

I_tRMS

T_Terminal= 115 °C,

T_C= 90 °C

650

600

T_Terminal= 115 °C,

T_C= 115 °C

(table continues...)

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

I_CRMt_plimited by T_{vj op}

Parameter

Values

Unit

Repetitive peak collector

current

1600

Gate-emitter peak voltage

V_GES

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.50

1.65

1.70

1.75

5.80

12.8

0.43

122

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_{CE sat}I_C= 800 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

1.75

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 16 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V_GE= 15 V, V_CC= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

Reverse transfer

capacitance

C_res

0.6

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.1

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

Turn-on delay time

(inductive load)

I_C= 800 A, V_CC= 600 V,

V_GE= 15 V, R_Gon= 0.51 Ω

T_vj= 25 °C

0.500

0.517

0.522

0.527

0.065

0.073

0.075

0.077

0.544

0.628

0.652

0.675

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

Rise time (inductive load)

t_r

I_C= 800 A, V_CC= 600 V,

V_GE= 15 V, R_Gon= 0.51 Ω

µs

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

Turn-oﬀ delay time

(inductive load)

t_doﬀ

I_C= 800 A, V_CC= 600 V,

V_GE= 15 V, R_Goﬀ= 0.51 Ω

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

(table continues...)

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

3 Diode, Inverter

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

0.122

0.260

0.310

0.360

27.2

Unit

Min.

Max.

Fall time (inductive load)

t_f

I_C= 800 A, V_CC= 600 V,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

µs

V_GE= 15 V, R_Goﬀ= 0.51 Ω

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_C= 800 A, V_CC= 600 V,

L_σ= 25 nH, V_GE= 15 V,

R_Gon= 0.51 Ω, di/dt =

8700 A/µs (T_vj= 175 °C)

42.7

48.7

54.6

Turn-oﬀ energy loss per

pulse

I_C= 800 A, V_CC= 600 V,

L_σ= 25 nH, V_GE= 15 V,

R_Goﬀ= 0.51 Ω, dv/dt =

3400 V/µs (T_vj= 175 °C)

69.7

108

120

132

SC data

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj=150 °C

3000

t_P≤ 6 µs,

T_vj=175 °C

2700

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per IGBT

0.0483 K/W

K/W

Thermal resistance, case to

heat sink

0.0251

Temperature under

switching conditions

-40

175

°C

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

Diode, Inverter

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

Continuous DC forward

current

I_F

800

Repetitive peak forward

current

I_FRM

t_P= 1 ms

1600

(table continues...)

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

3 Diode, Inverter

Table 5

(continued) Maximum rated values

Symbol Note or test condition

I²t

t_P= 10 ms, V_R= 0 V

Parameter

I²t - value

Values

53000

41000

Unit

T_vj= 125 °C

T_vj= 175 °C

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.80

1.70

1.65

1.60

540

Unit

Min.

Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 800 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

2.10

Peak reverse recovery

current

V_CC= 600 V, I_F= 800 A,

V_GE= -15 V, -di_F/dt =

8700 A/µs (T_vj= 175 °C)

720

765

810

Recovered charge

V_CC= 600 V, I_F= 800 A,

V_GE= -15 V, -di_F/dt =

8700 A/µs (T_vj= 175 °C)

µC

117

137

156

Reverse recovery energy

E_rec

V_CC= 600 V, I_F= 800 A,

V_GE= -15 V, -di_F/dt =

8700 A/µs (T_vj= 175 °C)

27.9

54.5

63.3

72.1

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per diode

0.0892 K/W

K/W

Thermal resistance, case to

heat sink

0.0333

Temperature under

switching conditions

-40

175

°C

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

4 Characteristics diagrams

Characteristics diagrams

Output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

V_GE= 15 V

Output characteristic field (typical), IGBT, Inverter

I_C= f(V_CE

T_vj= 175 °C

)

1600

1400

1200

1000

800

600

400

200

1400

1200

1000

800

600

400

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

V_CE= 20 V

Switching losses (typical), IGBT, Inverter

E = f(I_C)

R_Goﬀ= 0.51 Ω, R_Gon= 0.51 Ω, V_CC= 600 V, V_GE

)

= 15 V

1600

250

200

150

100

1400

1200

1000

800

600

400

200

10 11 12 13 14

200 400 600 800 1000 1200 1400 1600

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

4 Characteristics diagrams

Switching losses (typical), IGBT, Inverter

Switching times (typical), IGBT, Inverter

E = f(R_G)

t = f(I_C)

I_C= 800 A, V_CC= 600 V, V_GE

15 V

R_Goﬀ= 0.51 Ω, R_Gon= 0.51 Ω, V_CC= 600 V, V_GE

175 °C

= 15 V, T_vj=

400

350

300

250

200

150

100

0.1

0.01

200 400 600 800 1000 1200 1400 1600

Switching times (typical), IGBT, Inverter

t = f(R_G)

Voltage slope (typical), IGBT, Inverter

dv/dt = f(R_G)

I_C= 800 A, V_CC= 600 V, V_GE

15 V, T_vj= 175 °C

I_C= 800 A, V_CC= 600 V, V_GE= 15 V, T_vj= 25 °C

0.1

0.01

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

4 Characteristics diagrams

Transient thermal impedance , IGBT, Inverter

Z_th= f(t)

Reverse bias safe operating area (RBSOA), IGBT,

Inverter

I_C= f(V_CE

)

R_Goﬀ= 0.51 Ω, V_GE= 15 V, T_vj= 175 °C

0.1

2000

1800

1600

1400

1200

1000

800

600

400

200

0.01

0.001

200

400

600

800 1000 1200 1400

0.001

0.01

0.1

Capacity characteristic (typical), IGBT, Inverter

C = f(V_CE

Gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

)

f = 100 kHz, V_GE= 0 V, T_vj= 25 °C

I_C= 800 A, T_vj= 25 °C

1000

100

-1

-3

-5

-7

-9

-11

-13

-15

0.1

10 20 30 40 50 60 70 80 90 100

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

4 Characteristics diagrams

Forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

Switching losses (typical), Diode, Inverter

E_rec= f(I_F)

R_Gon= 0.51 Ω, V_CE= 600 V

1600

1400

1200

1000

800

600

400

200

0.0

0.5

1.0

1.5

2.0

2.5

200 400 600 800 1000 1200 1400 1600

Switching losses (typical), Diode, Inverter

E_rec= f(R_G)

Transient thermal impedance, Diode, Inverter

Z_th= f(t)

V_CE= 600 V, I_F= 800 A

0.1

0.01

0.001

0.01

0.1

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

5 Circuit diagram

Circuit diagram

Figure 1

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

6 Package outlines

Package outlines

Infineon

Figure 2

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

7 Module label code

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

Example

71549142846550549911530

Figure 3

Datasheet

Revision 1.00

2022-05-11

FF800R12KE7

62 mm C-Series module

Revision history

Document revision

Date of release Description of changes

V1.0

V1.1

n/a

2020-06-19

2020-08-21

2020-09-01

Target datasheet

Datasheet migrated to a new system with a new layout and new revision

number schema: target or preliminary datasheet = 0.xy; final datasheet =

1.xy

0.10

0.30

0.40

1.00

2021-09-02

2021-11-15

2021-12-17

2022-05-11

Target datasheet

Preliminary datasheet

Final datasheet

Datasheet

Revision 1.00

2022-05-11

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-05-11

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-AAJ653-006

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

FF800R12KE7 [INFINEON]

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