FP150R12N3T7 [INFINEON]
Solder pin;
Infineon 
FP150R12N3T7
™
EconoPIM 3 module
Preliminary
™
™
EconoPIM 3 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 150 A / ICRM = 300 A
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
• Mechanical features
- Integrated NTC temperature sensor
- Solder contact technology
- Copper base plate
- Al2O3 substrate with low thermal resistance
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
-
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
1
2
3
4
5
6
7
8
9
10
11
Datasheet
2
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
1 Package
1
Package
Table 1
Insulation Coordination
Symbol Note or test condition
Parameter
Values
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz,
2.5
kV
t = 1 min
Material of module
baseplate
Cu
Internal Isolation
Creepage distance
Clearance
basic insulation (class 1, IEC 61140)
Al2O3
10.0
7.5
dCreep terminal to heatsink
mm
mm
dClear terminal to heatsink
Comparative tracking index
RTI Elec.
CTI
> 200
140
RTI
housing
°C
Table 2
Characteristic Values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
25
nH
Module lead resistance,
terminals - chip
RAA'+CC' TC=25°C, per switch
RCC'+EE' TC=25°C, per switch
Tstg
1.1
mΩ
Module lead resistance,
terminals - chip
1.6
mΩ
Storage temperature
-40
3
125
6
°C
Mounting torque for modul
mounting
M
- Mounting according to M5,
valid application note
Nm
Screw
Weight
G
300
g
2
IGBT, Inverter
Table 3
Maximum Rated Values
Symbol Note or test condition
VCES
ICDC
Parameter
Values
1200
150
Unit
Collector-emitter voltage
Tvj = 25 °C
TC = 80 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
ICRM
VGES
300
20
A
V
Gate-emitter peak voltage
Datasheet
3
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
2 IGBT, Inverter
Table 4
Characteristic Values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 150 A,
VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.55
1.69
1.77
5.80
TBD
V
Gate threshold voltage
Gate charge
VGEth
IC = 3.5 mA,
VCE = VGE
5.15
6.45
V
,
Tvj = 25 °C
QG
VGE = 15 V,
VCE = 600 V
2.5
µC
Internal gate resistor
Input capacitance
RGint
Cies
Tvj = 25 °C
1
Ω
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
30.1
nF
Reverse transfer capacitance
Cres
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
0.105
nF
Collector-emitter cut-off
ICES
IGES
VCE = 1200 V,
VGE = 0 V
Tvj = 25 °C
0.012 mA
current
Gate-emitter leakage current
VCE = 0 V,
VGE = 20 V,
Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
tdon
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.172
0.183
0.189
VCE = 600 V,
VGE = 15 V,
RGon = 3.3 Ω
Rise time (inductive load)
tr
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.072
0.077
0.080
µs
µs
VCE = 600 V,
VGE = 15 V,
RGon = 3.3 Ω
Turn-off delay time
(inductive load)
tdoff
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.331
0.414
0.433
VCE = 600 V,
VGE = 15 V,
RGoff = 3.3 Ω
Datasheet
4
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
3 Diode, Inverter
Table 4
Characteristic Values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
0.103
Unit
Fall time (inductive load)
tf
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
µs
VCE = 600 V,
VGE = 15 V,
RGoff = 3.3 Ω
0.198
0.262
Turn-on energy loss per
pulse
Eon
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
16.6
24.9
29.6
mJ
mJ
A
VCE = 600 V,
Lσ = 35 nH,
VGE = 15 V,
RGon = 3.3 Ω,
di/dt = 1700 A/µs
(Tvj = 175 °C)
Turn-off energy loss per
pulse
Eoff
IC = 150 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
10.4
15.9
19.9
VCE = 600 V,
Lσ = 35 nH,
VGE = 15 V,
RGoff = 3.3 Ω,
dv/dt = 3200 V/µs
(Tvj = 175 °C)
SC data
ISC
VGE ≤ 15 V,
VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
520
490
tP ≤ 7 µs,
Tvj = 175 °C
Thermal resistance, junction
to case
RthJC
RthCH
per IGBT
0.290 K/W
0.0680 K/W
Thermal resistance, case to
heatsink
per IGBT,
λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
3
Diode, Inverter
Table 5
Maximum Rated Values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Datasheet
5
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
3 Diode, Inverter
Table 5
Maximum Rated Values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Continous DC forward
current
IF
150
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
300
A
tP = 10 ms,
VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
2700
2250
A²s
Table 6
Characteristic Values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IF = 150 A,
VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
65.3
91.8
107
TBD
V
Peak reverse recovery
current
IRM
VR = 600 V,
IF = 150 A,
VGE = -15 V,
-diF/dt = 1700 A/µs
(Tvj = 175 °C)
A
Recovered charge
Qr
VR = 600 V,
IF = 150 A,
VGE = -15 V,
-diF/dt = 1700 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
10.3
21.7
28.6
µC
mJ
Reverse recovery energy
Erec
VR = 600 V,
IF = 150 A,
VGE = -15 V,
-diF/dt = 1700 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
3.27
7.32
9.88
Thermal resistance, junction
to case
RthJC
RthCH
per diode
0.463 K/W
K/W
Thermal resistance, case to
heatsink
per diode,
λgrease= 1 W/(m*K)
0.0698
Temperature under
switching conditions
Tvj op
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Datasheet
6
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
4 Diode, Rectifier
4
Diode, Rectifier
Table 7
Maximum Rated Values
Symbol Note or test condition
Parameter
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
IFRMSM TC = 100 °C
IRMSM TC = 100 °C
1600
V
Maximum RMS forward
current per chip
150
150
A
A
A
Maximum RMS current at
rectifier output
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
1600
1400
12800
9800
I2t - value
A²s
Table 8
Characteristic Values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
Reverse current
VF
Ir
IF = 150 A
Tvj = 150 °C
0.97
1
V
Tvj = 150 °C,
VR = 1600 V
mA
Thermal resistance, junction
to case
RthJC
RthCH
per diode
0.333 K/W
K/W
Thermal resistance, case to
heatsink
per diode,
λgrease= 1 W/(m*K)
0.0670
Temperature under
switching conditions
Tvj, op
-40
150
°C
5
IGBT, Brake-Chopper
Table 9
Maximum Rated Values
Parameter
Symbol Note or test condition
VCES
ICDC
Values
1200
100
Unit
Collector-emitter voltage
Tvj = 25 °C
TC = 90 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
ICRM
VGES
200
20
A
V
Gate-emitter peak voltage
Datasheet
7
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
5 IGBT, Brake-Chopper
Table 10
Characteristic Values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 100 A,
VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.50
1.64
1.72
5.80
TBD
V
Gate threshold voltage
Gate charge
VGEth
IC = 2.5 mA,
VCE = VGE
5.15
6.45
V
,
Tvj = 25 °C
QG
VGE = 15 V,
VCE = 600 V
1.8
µC
Internal gate resistor
Input capacitance
RGint
Cies
Tvj = 25 °C
1.5
Ω
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
21.7
nF
Reverse transfer capacitance
Cres
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
0.076
nF
Collector-emitter cut-off
ICES
IGES
VCE = 1200 V,
VGE = 0 V
Tvj = 25 °C
0.01
100
mA
nA
current
Gate-emitter leakage current
VCE = 0 V,
VGE = 20 V,
Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.169
0.180
0.187
µs
µs
µs
VCE = 600 V,
VGE = 15 V,
RGon = 4.3 Ω
Rise time (inductive load)
tr
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.063
0.067
0.070
VCE = 600 V,
VGE = 15 V,
RGon = 4.3 Ω
Turn-off delay time
(inductive load)
tdoff
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.310
0.390
0.410
VCE = 600 V,
VGE = 15 V,
RGoff = 4.3 Ω
Datasheet
8
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
6 Diode, Brake-Chopper
Table 10
Characteristic Values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
0.110
Unit
Fall time (inductive load)
tf
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
µs
VCE = 600 V,
VGE = 15 V,
RGoff = 4.3 Ω
0.190
0.250
Turn-on energy loss per
pulse
Eon
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
7.12
11.7
14.5
mJ
mJ
A
VCE = 600 V,
Lσ = 35 nH,
VGE = 15 V,
RGon = 4.3 Ω,
di/dt = 1100 A/µs
(Tvj = 175 °C)
Turn-off energy loss per
pulse
Eoff
IC = 100 A,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
6.93
10.6
13.3
VCE = 600 V,
Lσ = 35 nH,
VGE = 15 V,
RGoff = 4.3 Ω,
dv/dt = 2800 V/µs
(Tvj = 175 °C)
SC data
ISC
VGE ≤ 15 V,
VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
370
350
tP ≤ 7 µs,
Tvj = 175 °C
Thermal resistance, junction
to case
RthJC
RthCH
per IGBT
0.373 K/W
0.0680 K/W
Thermal resistance, case to
heatsink
per IGBT,
λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
6
Diode, Brake-Chopper
Table 11
Maximum Rated Values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Datasheet
9
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
6 Diode, Brake-Chopper
Table 11
Maximum Rated Values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Continous DC forward
current
IF
50
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
100
A
tP = 10 ms,
VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
220
200
A²s
Table 12
Characteristic Values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IF = 50 A,
VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
37.3
44.3
49.6
TBD
V
Peak reverse recovery
current
IRM
VR = 600 V,
IF = 50 A,
VGE = -15 V,
-diF/dt = 550 A/µs
(Tvj = 175 °C)
A
Recovered charge
Qr
VR = 600 V,
IF = 50 A,
VGE = -15 V,
-diF/dt = 550 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
3.86
7.05
10.1
µC
mJ
Reverse recovery energy
Erec
VR = 600 V,
IF = 50 A,
VGE = -15 V,
-diF/dt = 550 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.13
2.34
3.23
Thermal resistance, junction
to case
RthJC
RthCH
per diode
0.909 K/W
K/W
Thermal resistance, case to
heatsink
per diode,
λgrease= 1 W/(m*K)
0.109
Temperature under
switching conditions
Tvj op
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Datasheet
10
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
7 NTC-Thermistor
7
NTC-Thermistor
Table 13
Characteristic Values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
R25
TNTC = 25 °C
5
kΩ
%
ΔR/R
TNTC = 100 °C,
R100 = 493 Ω
-5
5
Power dissipation
B-value
P25
TNTC = 25 °C
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
11
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE
output characteristic (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 175 °C
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = 15 V
300
120
110
100
90
80
70
60
50
40
30
20
10
0
250
200
150
100
50
0
5
6
7
8
9
10
11
12
13
0
50
100
150
200
250
300
Datasheet
12
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
switching times (typical), IGBT, Inverter
E = f(RG)
t = f(IC)
IC = 150 A, VCE = 600 V, VGE
=
15 V
RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE
175 °C
= 15 V, Tvj =
160
150
140
130
120
110
100
90
10
1
80
70
60
0.1
0.01
50
40
30
20
10
0
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
switching times (typical), IGBT, Inverter
transient thermal impedance , IGBT, Inverter
t = f(RG)
Zth = f(t)
IC = 150 A, VCE = 600 V, VGE
= 15 V, Tvj = 175 °C
10
1
1
0.1
0.1
0.01
0.01
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
Datasheet
13
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
reverse bias safe operating area (RBSOA), IGBT,
Inverter
capacity characteristic (typical), IGBT, Inverter
C = f(VCE
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
)
IC = f(VCE
)
RGoff = 3.3 Ω, VGE = 15 V, Tvj = 175 °C
350
1000
300
250
200
150
100
50
100
10
1
0.1
0.01
0
0
200
400
600
800 1000 1200 1400
0
10 20 30 40 50 60 70 80 90 100
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 150 A, VCE = 600 V, VGE = 15 V, Tvj = 25 °C
IC = 150 A, Tvj = 25 °C
7
6
5
4
3
2
1
0
15
10
5
0
-5
-10
-15
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
14
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 3.3 Ω, VCE = 600 V
300
250
200
150
100
50
14
12
10
8
6
4
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
250
300
switching losses (typical), Diode, Inverter
Erec = f(RG)
transient thermal impedance , Diode, Inverter
Zth = f(t)
VCE = 600 V, IF = 150 A
14
12
10
8
1
0.1
6
4
2
0
0.01
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
Datasheet
15
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
transient thermal impedance , Diode, Rectifier
IF = f(VF)
Zth = f(t)
300
250
200
150
100
50
1
0.1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
10
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE
VGE = 15 V
forward characteristic (typical), Diode, Brake-
Chopper
IF = f(VF)
)
200
100
90
80
70
60
50
40
30
20
10
0
175
150
125
100
75
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
16
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
17
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
9 Circuit diagram
9
Circuit diagram
-
Figure 2
Datasheet
18
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
10 Package outlines
10
Package outlines
Figure 3
Datasheet
19
0.10
2021-02-09
FP150R12N3T7
™
EconoPIM 3 module
11 Module label code
11
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
Datasheet
20
0.10
2021-02-09
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-02-09
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2021 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
©2020 ICPDF网 联系我们和版权申明