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FP25R12KT4_B15 [INFINEON]

EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode; EconoPIM2模块海沟/ Fieldstopp IGBT4和发射极控制二极管4

FP25R12KT4_B15


元器件型号：	FP25R12KT4_B15
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode EconoPIM2模块海沟/ Fieldstopp IGBT4和发射极控制二极管4 晶体二极管晶体管功率控制双极性晶体管局域网
PDF文件：	总12页 (文件大小：581K)
下载文档：	下载PDF数据表文档文件
型号参数：FP25R12KT4_B15参数

FP25R12KT4B11BOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FP25R12KT4B15BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-24

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0 INFINEON

FP25R12KT4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-23

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1 INFINEON

FP25R12U1T4

SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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46 INFINEON

FP25R12W1T7B11BPSA1

Insulated Gate Bipolar Transistor,

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3 INFINEON

FP25R12W2T4

IGBT-Wechselrichter / IGBT-inverter

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547 INFINEON

FP25R12W2T4_B11

IGBT-Wechselrichter / IGBT-inverter HÃ¶chstzulÃ¤ssige Werte / maximum rated values

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114 INFINEON

FP25R12W2T4B11BOMA1

Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP25R12W2T4BOMA1

Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP25R12W2T4ENG

Insulated Gate Bipolar Transistor,

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0 INFINEON

FP25R12W2T4P

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP25R12W2T4PB11BPSA1

Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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3 INFINEON

FP25R12W2T4PBPSA1

Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP25S

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

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29 VMI

FP2616-I-22

Ferrite Cores

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15 NEC

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