FP50R12KT4_B11 [INFINEON]

EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC; EconoPIM2模块海沟/ Fieldstopp IGBT4和发射极控制二极管4和压接/ NTC
FP50R12KT4_B11
元器件型号: FP50R12KT4_B11
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
EconoPIM2模块海沟/ Fieldstopp IGBT4和发射极控制二极管4和压接/ NTC

二极管 双极性晶体管
PDF文件: 总12页 (文件大小:591K)
下载文档:  下载PDF数据表文档文件
型号参数:FP50R12KT4_B11参数

FP50R12KT4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP50R12KT4G

EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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331 INFINEON

FP50R12KT4G_B15

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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11 INFINEON

FP50R12KT4GB15BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R12KT4GBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35

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1 INFINEON

FP50R12KT4P

Insulated Gate Bipolar Transistor

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7 INFINEON

FP50S

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

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127 VMI

FP50S_13

High Voltage Rectifier Stacks 2.2A • 3000ns • Axial Leaded

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1 VMI

FP50UF

High Voltage Rectifier Stacks 2.2A • 70ns • Axial Leaded

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0 VMI

FP-510

Wideband RF/Pulse Transformer 1-1000 MHz

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18 SIRENZA

FP5101

1 Channel Synchronous PWM Controller

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23 ETC

FP5101-10

Analog IC

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49 ETC

FP5101-11

Analog IC

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20 ETC

FP5101-12

Analog IC

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20 ETC

FP5101-13

Analog IC

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8 ETC