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FP50R12W2T7_B11 [INFINEON]

PressFIT;
FP50R12W2T7_B11
型号： FP50R12W2T7_B11
厂家： Infineon    Infineon
描述：

PressFIT
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FP50R12W2T7_B11  
™
EasyPIM module  
Preliminary datasheet  
™
™
EasyPIM module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and PressFIT / NTC  
Features  
• Electrical features  
- VCES = 1200 V  
- IC nom = 50 A / ICRM = 100 A  
- Low VCE,sat  
- TRENCHSTOPTM IGBT7  
- Overload operation up to 175°C  
• Mechanical features  
- Al2O3 substrate with low thermal resistance  
- PressFIT contact technology  
- 2.5 kV AC 1 minute insulation  
- Compact design  
- High power density  
Potential applications  
• Motor drives  
• Auxiliary inverters  
• Air conditioning  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20  
1
2
3
4
5
6
7
8
9
10  
11  
Datasheet  
2
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
2.5  
Unit  
Isolation test voltage  
Internal isolation  
Creepage distance  
Creepage distance  
Clearance  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
11.5  
6.3  
dCreep terminal to heatsink  
mm  
mm  
mm  
mm  
dCreep terminal to terminal  
dClear terminal to heatsink  
dClear terminal to terminal  
CTI  
10.0  
5.0  
Clearance  
Comparative tracking  
index  
> 200  
Relative thermal index  
(electrical)  
RTI  
housing  
140  
°C  
Table 2  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
30  
Unit  
Min.  
Max.  
Stray inductance module  
LsCE  
nH  
Module lead resistance,  
terminals - chip  
RAA'+CC' TH = 25 °C, per switch  
6
mΩ  
Module lead resistance,  
terminals - chip  
RCC'+EE' TH = 25 °C, per switch  
5
mΩ  
Storage temperature  
Mounting force per clamp  
Weight  
Tstg  
F
-40  
40  
125  
80  
°C  
N
g
G
39  
Note:  
The current under continuous operation is limited to 25 A rms per connector pin. Tvj op > 150°C is allowed for  
operation at overload conditions. For detailed specifications, please refer to AN 2018-14.  
2
IGBT, Inverter  
Table 3  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
1200  
50  
Unit  
Collector-emitter voltage  
VCES  
Tvj = 25 °C  
TH = 80 °C  
V
A
Continuous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
Repetitive peak collector  
current  
tp limited by Tvj op  
100  
20  
A
V
Gate-emitter peak voltage  
Datasheet  
3
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
2 IGBT, Inverter  
Table 4  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
1.50  
1.64  
1.72  
5.80  
0.92  
0
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 50 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
TBD  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 1.28 mA, VCE = VGE, Tvj = 25 °C  
5.15  
6.45  
V
VGE = 15 V, VCC = 600 V  
Tvj = 25 °C  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
11.1  
0.039  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 1200 V, VGE = 0 V  
Tvj = 25 °C  
0.008 mA  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
nA  
µs  
Turn-on delay time  
(inductive load)  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, RGon = 5.1 Ω  
Tvj = 25 °C  
0.051  
0.054  
0.055  
0.027  
0.028  
0.029  
0.265  
0.335  
0.382  
0.111  
0.185  
0.277  
3.24  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, RGon = 5.1 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, RGoff = 5.1 Ω  
Fall time (inductive load)  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, RGoff = 5.1 Ω  
µs  
Turn-on energy loss per  
pulse  
Eon  
IC = 50 A, VCC = 600 V,  
mJ  
mJ  
L = 35 nH, VGE = 15 V,  
σ
4.49  
RGon = 5.1 Ω, di/dt =  
5.21  
1700 A/µs (Tvj = 175 °C)  
Turn-off energy loss per  
pulse  
Eoff  
IC = 50 A, VCC = 600 V,  
3.84  
L = 35 nH, VGE = 15 V,  
σ
5.54  
RGoff = 5.1 Ω, dv/dt =  
6.63  
2900 V/µs (Tvj = 175 °C)  
(table continues...)  
Datasheet  
4
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
3 Diode, Inverter  
Table 4  
(continued) Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
190  
Unit  
Min.  
Max.  
SC data  
ISC  
VGE ≤ 15 V, VCC = 800 V,  
VCEmax=VCES-LsCE*di/dt  
tP ≤ 8 µs,  
Tvj=150 °C  
A
tP ≤ 7 µs,  
Tvj=175 °C  
180  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per IGBT, λgrease = 1 W/(m·K)  
0.910  
K/W  
°C  
Temperature under  
switching conditions  
-40  
175  
3
Diode, Inverter  
Table 5  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
1200  
V
Continuous DC forward  
current  
IF  
IFRM  
I2t  
50  
A
A
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
100  
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 175 °C  
300  
250  
A²s  
Table 6  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.72  
1.59  
1.52  
48.2  
65.5  
77.8  
4.36  
7.52  
9.82  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IRM  
Qr  
IF = 50 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
TBD  
V
Peak reverse recovery  
current  
VCC = 600 V, IF = 50 A,  
VGE = -15 V, -diF/dt =  
1700 A/µs (Tvj = 175 °C)  
A
Recovered charge  
VCC = 600 V, IF = 50 A,  
VGE = -15 V, -diF/dt =  
1700 A/µs (Tvj = 175 °C)  
µC  
(table continues...)  
Datasheet  
5
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
4 Diode, Rectifier  
Table 6  
(continued) Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.57  
Unit  
Min.  
Max.  
Reverse recovery energy  
Erec  
VCC = 600 V, IF = 50 A,  
VGE = -15 V, -diF/dt =  
1700 A/µs (Tvj = 175 °C)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
mJ  
2.95  
3.95  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 1 W/(m·K)  
1.20  
K/W  
°C  
Temperature under  
switching conditions  
-40  
175  
4
Diode, Rectifier  
Table 7  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
1600  
V
Maximum RMS forward  
current per chip  
IFRMSM TH = 90 °C  
IRMSM TH = 90 °C  
50  
50  
A
A
A
Maximum RMS current at  
rectifier output  
Surge forward current  
IFSM  
I2t  
tP = 10 ms  
tP = 10 ms  
Tvj = 25 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 150 °C  
450  
370  
I2t - value  
1010  
685  
A²s  
Table 8  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.09  
Unit  
Min.  
Max.  
Forward voltage  
Reverse current  
VF  
Ir  
IF = 50 A  
Tvj = 150 °C  
V
Tvj = 150 °C, VR = 1600 V  
0.18  
mA  
K/W  
Thermal resistance,  
junction to heat sink  
RthJH  
per diode, λgrease = 1 W/(m·K)  
1.24  
Temperature under  
switching conditions  
Tvj, op  
-40  
150  
°C  
Datasheet  
6
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
5 IGBT, Brake-Chopper  
5
IGBT, Brake-Chopper  
Table 9  
Maximum rated values  
Symbol Note or test condition  
VCES  
ICDC  
Parameter  
Values  
1200  
35  
Unit  
Collector-emitter voltage  
Tvj = 25 °C  
TH = 90 °C  
V
A
Continuous DC collector  
current  
Tvj max = 175 °C  
Repetitive peak collector  
current  
ICRM  
VGES  
tp limited by Tvj op  
70  
20  
A
V
Gate-emitter peak voltage  
Table 10  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.60  
1.74  
1.82  
5.80  
0.548  
0
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 35 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
TBD  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 0.75 mA, VCE = VGE, Tvj = 25 °C  
5.15  
6.45  
V
VGE = 15 V, VCC = 600 V  
Tvj = 25 °C  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
6.62  
0.023  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 1200 V, VGE = 0 V  
Tvj = 25 °C  
0.005 mA  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
nA  
µs  
Turn-on delay time  
(inductive load)  
IC = 35 A, VCC = 600 V,  
VGE = 15 V, RGon = 5.6 Ω  
Tvj = 25 °C  
0.043  
0.046  
0.048  
0.036  
0.038  
0.039  
0.240  
0.310  
0.340  
0.120  
0.210  
0.270  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 35 A, VCC = 600 V,  
VGE = 15 V, RGon = 5.6 Ω  
µs  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 35 A, VCC = 600 V,  
VGE = 15 V, RGoff = 5.6 Ω  
Fall time (inductive load)  
IC = 35 A, VCC = 600 V,  
VGE = 15 V, RGoff = 5.6 Ω  
(table continues...)  
Datasheet  
7
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
6 Diode, Brake-Chopper  
Table 10  
(continued) Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
2.84  
3.38  
3.61  
2.31  
3.84  
4.28  
110  
Unit  
Min.  
Max.  
Turn-on energy loss per  
pulse  
Eon  
Eoff  
ISC  
IC = 35 A, VCC = 600 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
mJ  
L = 35 nH, VGE = 15 V,  
σ
RGon = 5.6 Ω, di/dt = 590  
A/µs (Tvj = 175 °C)  
Turn-off energy loss per  
pulse  
IC = 35 A, VCC = 600 V,  
mJ  
A
L = 35 nH, VGE = 15 V,  
σ
RGoff = 5.6 Ω, dv/dt =  
3000 V/µs (Tvj = 175 °C)  
SC data  
VGE ≤ 15 V, VCC = 800 V,  
VCEmax=VCES-LsCE*di/dt  
tP ≤ 8 µs,  
Tvj=150 °C  
tP ≤ 7 µs,  
Tvj=175 °C  
100  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per IGBT, λgrease = 1 W/(m·K)  
1.09  
K/W  
°C  
Temperature under  
switching conditions  
-40  
175  
6
Diode, Brake-Chopper  
Table 11  
Maximum rated values  
Parameter  
Symbol Note or test condition  
VRRM  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
1200  
V
Continuous DC forward  
current  
IF  
IFRM  
I2t  
25  
50  
A
A
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 175 °C  
72.5  
63  
A²s  
Table 12  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.83  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IF = 25 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
TBD  
V
1.70  
1.63  
(table continues...)  
Datasheet  
8
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
7 NTC-Thermistor  
Table 12  
(continued) Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
22.2  
29.2  
33.9  
1.63  
3.44  
4.59  
0.38  
1.25  
1.88  
2.02  
Unit  
Min.  
Max.  
Peak reverse recovery  
current  
IRM  
VCC = 600 V, IF = 25 A,  
-diF/dt = 570 A/µs  
(Tvj = 175 °C)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
A
Recovered charge  
Qr  
VCC = 600 V, IF = 25 A,  
-diF/dt = 570 A/µs  
(Tvj = 175 °C)  
µC  
Reverse recovery energy  
Erec  
VCC = 600 V, IF = 25 A,  
-diF/dt = 570 A/µs  
(Tvj = 175 °C)  
mJ  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 1 W/(m·K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
175  
7
NTC-Thermistor  
Table 13  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
5
Unit  
Min.  
Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
B-value  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
kΩ  
%
TNTC = 100 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3375  
3411  
3433  
B-value  
K
B-value  
K
Note:  
Specification according to the valid application note.  
Datasheet  
9
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
8
Characteristics diagrams  
Output characteristic (typical), IGBT, Inverter  
IC = f(VCE  
Output characteristic field (typical), IGBT, Inverter  
IC = f(VCE  
)
)
VGE = 15 V  
Tvj = 175 °C  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
Transfer characteristic (typical), IGBT, Inverter  
IC = f(VGE  
Switching losses (typical), IGBT, Inverter  
E = f(IC)  
)
VCE = 20 V  
RGoff = 5.1 Ω, VCC = 600 V, VGE = 15 V, RGon = 5.1 Ω  
100  
16  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
14  
12  
10  
8
6
4
2
0
5
6
7
8
9
10  
11  
12  
13  
0
10 20 30 40 50 60 70 80 90 100  
Datasheet  
10  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
Switching losses (typical), IGBT, Inverter  
Switching times (typical), IGBT, Inverter  
E = f(RG)  
t = f(IC)  
IC = 50 A, VCC = 600 V, VGE  
=
15 V  
RGoff = 5.1 Ω, RGon = 5.1 Ω, VCC = 600 V, VGE  
175 °C  
= 15 V, Tvj =  
35  
10  
1
30  
25  
20  
15  
10  
5
0.1  
0.01  
0.001  
0
0
5
10 15 20 25 30 35 40 45 50 55  
0
10 20 30 40 50 60 70 80 90 100  
Switching times (typical), IGBT, Inverter  
t = f(RG)  
Voltage slope (typical), IGBT, Inverter  
dv/dt = f(RG)  
IC = 50 A, VCC = 600 V, VGE  
=
15 V, Tvj = 175 °C  
IC = 50 A, VCC = 600 V, VGE = 15 V, Tvj = 25 °C  
10  
9
8
7
6
5
4
3
2
1
0
1
0.1  
0.01  
0
5
10 15 20 25 30 35 40 45 50 55  
0
5
10 15 20 25 30 35 40 45 50 55  
Datasheet  
11  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
Transient thermal impedance , IGBT, Inverter  
Zth = f(t)  
Reverse bias safe operating area (RBSOA), IGBT,  
Inverter  
IC = f(VCE  
)
RGoff = 5.1 Ω, VGE = 15 V, Tvj = 175 °C  
10  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1
0.1  
0.01  
0
200  
400  
600  
800 1000 1200 1400  
0.001  
0.01  
0.1  
1
10  
Capacity characteristic (typical), IGBT, Inverter  
C = f(VCE  
Gate charge characteristic (typical), IGBT, Inverter  
VGE = f(QG)  
)
VGE = 0 V, Tvj = 25 °C, f = 100 kHz  
IC = 50 A, Tvj = 25 °C  
100  
15  
10  
5
10  
1
0
-5  
0.1  
0.01  
-10  
-15  
0
10 20 30 40 50 60 70 80 90 100  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
Datasheet  
12  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
Forward characteristic (typical), Diode, Inverter  
IF = f(VF)  
Switching losses (typical), Diode, Inverter  
Erec = f(IF)  
RGon = 5.1 Ω, VCC = 600 V  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
10 20 30 40 50 60 70 80 90 100  
Switching losses (typical), Diode, Inverter  
Erec = f(RG)  
Transient thermal impedance, Diode, Inverter  
Zth = f(t)  
IF = 50 A, VCC = 600 V  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
10  
1
0.1  
0.01  
0
5
10 15 20 25 30 35 40 45 50 55  
0.001  
0.01  
0.1  
1
10  
Datasheet  
13  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
Forward characteristic (typical), Diode, Rectifier  
Transient thermal impedance, Diode, Rectifier  
IF = f(VF)  
Zth = f(t)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
1
0.1  
0.01  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.001  
0.01  
0.1  
1
10  
Output characteristic (typical), IGBT, Brake-Chopper  
IC = f(VCE  
VGE = 15 V  
Forward characteristic (typical), Diode, Brake-  
Chopper  
IF = f(VF)  
)
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Datasheet  
14  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
8 Characteristics diagrams  
Temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
100000  
10000  
1000  
100  
10  
0
25  
50  
75  
100  
125  
150  
175  
Datasheet  
15  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
9 Circuit diagram  
9
Circuit diagram  
J
Figure 1  
Datasheet  
16  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
10 Package outlines  
10  
Package outlines  
Infineon  
Figure 2  
Datasheet  
17  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
11 Module label code  
11  
Module label code  
Module label code  
Code format  
Encoding  
Data Matrix  
ASCII text  
Barcode Code128  
Code Set A  
23 digits  
Symbol size  
Standard  
16x16  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
71549  
142846  
55054991  
15  
30  
Example  
71549142846550549911530  
71549142846550549911530  
Figure 3  
Datasheet  
18  
Revision 0.20  
2023-02-14  
FP50R12W2T7_B11  
™
EasyPIM module  
Revision history  
Revision history  
Document revision  
Date of release Description of changes  
V1.0  
V1.1  
V2.0  
n/a  
2018-03-06  
2019-09-11  
2020-03-13  
2020-09-01  
Target datasheet  
Target datasheet  
Preliminary datasheet  
Datasheet migrated to a new system with a new layout and new revision  
number schema: target or preliminary datasheet = 0.xy; final datasheet =  
1.xy  
0.20  
2023-02-14  
Preliminary datasheet  
Datasheet  
19  
Revision 0.20  
2023-02-14  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2023-02-14  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
Important notice  
Warnings  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
Except as otherwise explicitly approved by Infineon  
Technologies in  
authorized representatives of Infineon Technologies,  
Infineon Technologies’ products may not be used in  
any applications where a failure of the product or  
any consequences of the use thereof can reasonably  
be expected to result in personal injury.  
a written document signed by  
©
2023 Infineon Technologies AG  
All Rights Reserved.  
Do you have a question about any  
aspect of this document?  
Email: erratum@infineon.com  
Document reference  
IFX-AAX991-004  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customer’s technical departments to  
evaluate the suitability of the product for the intended  
application and the completeness of the product  
information given in this document with respect to such  
application.  

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