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FP75R12KE3BOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35;

FP75R12KE3BOSA1


元器件型号：	FP75R12KE3BOSA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 局域网栅晶体管
PDF文件：	总11页 (文件大小：508K)
下载文档：	下载PDF数据表文档文件
型号参数：FP75R12KE3BOSA1参数

FP75R12KE3V1

IGBT Module

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203 ETC

FP75R12KT3

IGBT-inverter

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609 EUPEC

FP75R12KT3

EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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314 EUPEC

FP75R12KT3_05

EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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31 EUPEC

FP75R12KT4

EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode

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526 INFINEON

FP75R12KT4_B11

EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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97 INFINEON

FP75R12KT4_B15

EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode

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649 INFINEON

FP75R12KT4B11BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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9 INFINEON

FP75R12KT4B15BOSA1

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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3 INFINEON

FP75R12KT4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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5 INFINEON

FP75R12KT4PB11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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10 INFINEON

FP75R12KT4PBPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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6 INFINEON

FP75R12N2T4_B11

Insulated Gate Bipolar Transistor,

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0 INFINEON

FP75R17N3E4BPSA1

Insulated Gate Bipolar Transistor, 125A I(C), 1700V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP75S

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

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48 VMI

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