FP75R12N2T7_B11_技术文档

FP75R12N2T7_B11

™

EconoPIM 2 module

Preliminary datasheet

™

EconoPIM 2 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 75 A / I_CRM= 150 A

- TRENCHSTOP^TMIGBT7

- Low V_CEsat

- Overload operation up to 175°C

• Mechanical features

- High power and thermal cycling capability

- Integrated NTC temperature sensor

- Copper base plate

- Al₂O₃substrate with low thermal resistance

- PressFIT contact technology

Potential applications

• Auxiliary inverters

• Motor drives

• Servo drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

-

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21

1

2

3

4

5

6

7

8

9

10

11

Datasheet

2

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FP75R12N2T7_B11

™

EconoPIM 2 module

1 Package

1

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

2.5

Unit

Isolation test voltage

V_ISOL

RMS, f = 50 Hz, t = 1 min

kV

Material of module

baseplate

Cu

Internal Isolation

Creepage distance

Clearance

basic insulation (class 1, IEC 61140)

Al₂O₃

10.0

7.5

d_Creepterminal to heatsink

mm

d_Clearterminal to heatsink

Comparative tracking index

RTI Elec.

CTI

> 200

140

RTI

housing

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Stray inductance module

L_sCE

35

nH

Module lead resistance,

terminals - chip

R_AA'+CC'T_C=25°C, per switch

R_CC'+EE'T_C=25°C, per switch

T_stg

5.6

mΩ

Module lead resistance,

terminals - chip

5.3

mΩ

Storage temperature

-40

3

125

6

°C

Mounting torque for modul

mounting

M

- Mounting according to M5, Screw

valid application note

Nm

Weight

G

180

g

2

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

I_CDC

Parameter

Values

1200

75

Unit

Collector-emitter voltage

T_vj= 25 °C

T_C= 100 °C

V

A

Continous DC collector

current

T_{vj max}= 175 °C

t_P= 1 ms

Repetitive peak collector

current

I_CRM

V_GES

150

20

A

V

Gate-emitter peak voltage

Datasheet

3

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FP75R12N2T7_B11

™

EconoPIM 2 module

2 IGBT, Inverter

Table 4

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Collector-emitter saturation

voltage

V_{CE sat}I_C= 75 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.55

1.69

1.77

5.80

1.25

2

TBD

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 1.28 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V

V_GE= 15 V, V_CE= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

C_res

I_CES

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

15.1

0.053

nF

Reverse transfer capacitance

Collector-emitter cut-oﬀ

current

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.014 mA

Gate-emitter leakage current

I_GES

t_don

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

nA

µs

Turn-on delay time

(inductive load)

I_C= 75 A, V_CE= 600 V,

V_GE= 15 V, R_Gon= 5.6 Ω

T_vj= 25 °C

0.146

0.162

0.169

0.053

0.057

0.060

0.320

0.390

0.440

0.110

0.200

0.270

8.05

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 75 A, V_CE= 600 V,

µs

mJ

A

V_GE= 15 V, R_Gon= 5.6 Ω

Turn-oﬀ delay time

(inductive load)

I_C= 75 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 5.6 Ω

Fall time (inductive load)

I_C= 75 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 5.6 Ω

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_C= 75 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 5.6 Ω, di/dt =

1050 A/µs (T_vj= 175 °C)

10.6

12.3

Turn-oﬀ energy loss per

pulse

I_C= 75 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 5.6 Ω, dv/dt =

3150 V/µs (T_vj= 175 °C)

4.95

7.76

9.51

SC data

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj= 150 °C

260

t_P≤ 7 µs,

T_vj= 175 °C

250

Datasheet

4

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FP75R12N2T7_B11

™

EconoPIM 2 module

3 Diode, Inverter

Table 4

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Thermal resistance, junction

to case

R_thJC

R_thCH

T_{vj op}

per IGBT

0.475 K/W

Thermal resistance, case to

heatsink

per IGBT, λ_grease= 1 W/(m*K)

0.141

K/W

Temperature under

switching conditions

-40

175

°C

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to

AN2018-14.

3

Diode, Inverter

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

V

Continous DC forward

current

I_F

75

A

Repetitive peak forward

current

I²t - value

I_FRM

I²t

t_P= 1 ms

150

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 175 °C

1150

740

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 75 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.72

1.59

1.52

38

TBD

V

Peak reverse recovery

current

V_R= 600 V, I_F= 75 A,

V_GE= -15 V, -di_F/dt =

1050 A/µs (T_vj= 175 °C)

A

51

59

Recovered charge

V_R= 600 V, I_F= 75 A,

V_GE= -15 V, -di_F/dt =

1050 A/µs (T_vj= 175 °C)

5.43

10.4

14.1

µC

Datasheet

5

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2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

4 Diode, Rectifier

Table 6

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Reverse recovery energy

E_rec

V_R= 600 V, I_F= 75 A,

V_GE= -15 V, -di_F/dt =

1050 A/µs (T_vj= 175 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.79

3.5

mJ

4.83

Thermal resistance, junction

to case

R_thJC

R_thCH

T_{vj op}

per diode

0.708 K/W

K/W

Thermal resistance, case to

heatsink

per diode, λ_grease= 1 W/(m*K)

0.153

Temperature under

switching conditions

-40

175

°C

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to

AN2018-14.

4

Diode, Rectifier

Table 7

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 150 °C

1600

V

Maximum RMS forward

current per chip

I_FRMSMT_C= 95 °C

I_RMSMT_C= 95 °C

75

A

Maximum RMS current at

rectifier output

100

Surge forward current

I_FSM

I²t

t_P= 10 ms

T_vj= 25 °C

T_vj= 150 °C

T_vj= 25 °C

T_vj= 150 °C

745

515

I²t - value

2780

1330

A²s

Table 8

Characteristic values

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Forward voltage

Reverse current

V_F

I_r

T_vj= 150 °C, I_F= 75 A

T_vj= 150 °C, V_R= 1600 V

per diode

1.06

1

V

mA

Thermal resistance, junction

to case

R_thJC

0.697 K/W

Thermal resistance, case to

heatsink

R_thCH

per diode, λ_Paste= 1 W /(m*K) / λ_grease= 1

W/(m*K)

0.153

K/W

Datasheet

6

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

5 IGBT, Brake-Chopper

Table 8

Characteristic values (continued)

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Temperature under

switching conditions

T_{vj, op}

-40

150

°C

5

IGBT, Brake-Chopper

Table 9

Maximum rated values

Parameter

Symbol Note or test condition

Values

1200

50

Unit

Collector-emitter voltage

V_CES

T_vj= 25 °C

T_C= 115 °C

V

A

Continous DC collector

current

I_CDC

I_CRM

V_GES

T_{vj max}= 175 °C

t_P= 1 ms

Repetitive peak collector

current

100

20

A

V

Gate-emitter peak voltage

Table 10

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Collector-emitter saturation

voltage

V_{CE sat}I_C= 50 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.50

1.64

1.72

5.80

0.92

0

TBD

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 1.28 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V

V_GE= 15 V, V_CE= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

C_res

I_CES

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

11.1

0.039

nF

Reverse transfer capacitance

Collector-emitter cut-oﬀ

current

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.007 mA

Gate-emitter leakage current

I_GES

t_don

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

nA

µs

Turn-on delay time

(inductive load)

I_C= 50 A, V_CE= 600 V,

V_GE= 15 V, R_Gon= 7.5 Ω

T_vj= 25 °C

0.059

0.061

0.062

0.035

0.039

0.041

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

I_C= 50 A, V_CE= 600 V,

µs

V_GE= 15 V, R_Gon= 7.5 Ω

Datasheet

7

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2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

6 Diode, Brake-Chopper

Table 10

Characteristic values (continued)

Symbol Note or test condition

Parameter

Values

Unit

Min. Typ. Max.

Turn-oﬀ delay time

t_doﬀ

I_C= 50 A, V_CE= 600 V,

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

0.290

0.380

0.420

0.110

0.200

0.270

3.37

µs

(inductive load)

V_GE= 15 V, R_Goﬀ= 7.5 Ω

Fall time (inductive load)

t_f

I_C= 50 A, V_CE= 600 V,

V_GE= 15 V, R_Goﬀ= 7.5 Ω

µs

mJ

A

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_C= 50 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 7.5 Ω, di/dt =

1145 A/µs (T_vj= 175 °C)

4.26

4.66

Turn-oﬀ energy loss per

pulse

I_C= 50 A, V_CE= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 7.5 Ω, dv/dt =

2940 V/µs (T_vj= 175 °C)

3.33

5.32

6.58

SC data

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj= 150 °C

190

t_P≤ 7 µs,

T_vj= 175 °C

180

Thermal resistance, junction

to case

R_thJC

R_thCH

T_{vj op}

per IGBT

0.580 K/W

K/W

Thermal resistance, case to

heatsink

per IGBT, λ_grease= 1 W/(m*K)

0.147

Temperature under

switching conditions

-40

175

°C

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to

AN2018-14.

6

Diode, Brake-Chopper

Table 11

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

V

Continous DC forward

current

I_F

25

50

A

Repetitive peak forward

current

I_FRM

t_P= 1 ms

Datasheet

8

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2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

7 NTC-Thermistor

Table 11

Maximum rated values (continued)

Symbol Note or test condition

Parameter

Values

125

Unit

I²t - value

I²t

t_P= 10 ms, V_R= 0 V

T_vj= 150 °C

T_vj= 175 °C

A²s

95

Table 12

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 25 A

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

1.83

1.70

1.63

19.2

19.3

19.4

1.59

1.63

1.64

0.64

0.66

0.67

TBD

V

Peak reverse recovery

current

V_R= 600 V, I_F= 25 A,

V_GE= -15 V, -di_F/dt = 375

A/µs (T_vj= 175 °C)

A

Recovered charge

V_R= 600 V, I_F= 25 A,

V_GE= -15 V, -di_F/dt = 375

A/µs (T_vj= 175 °C)

µC

mJ

Reverse recovery energy

E_rec

V_R= 600 V, I_F= 25 A,

V_GE= -15 V, -di_F/dt = 375

A/µs (T_vj= 175 °C)

Thermal resistance, junction

to case

R_thJC

R_thCH

T_{vj op}

per diode

1.43 K/W

K/W

Thermal resistance, case to

heatsink

per diode, λ_grease= 1 W/(m*K)

0.182

Temperature under

switching conditions

-40

175

°C

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to

AN2018-14.

7

NTC-Thermistor

Table 13

Characteristic values

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

5

kΩ

%

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

5

20

mW

Datasheet

9

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2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

7 NTC-Thermistor

Table 13

Characteristic values (continued)

Parameter

Symbol Note or test condition

Values

Unit

Min. Typ. Max.

B-value

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

K

Note:

Specification according to the valid application note.

Datasheet

10

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2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

8

Characteristics diagrams

output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

)

V_GE= 15 V

T_vj= 175 °C

150

125

100

75

50

25

0

125

100

75

50

25

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

switching losses (typical), IGBT, Inverter

E = f(I_C)

)

V_CE= 20 V

R_Goﬀ= 5.6 Ω, R_Gon= 5.6 Ω, V_CE= 600 V, V_GE= 15 V

150

50

45

40

35

30

25

20

15

10

5

125

100

75

50

25

0

5

6

7

8

9

10

11

12

13

0

15 30 45 60 75 90 105 120 135 150

Datasheet

11

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

switching losses (typical), IGBT, Inverter

switching times (typical), IGBT, Inverter

E = f(R_G)

t = f(I_C)

I_C= 75 A, V_CE= 600 V, V_GE

=

15 V

R_Goﬀ= 5.6 Ω, R_Gon= 5.6 Ω, V_CE= 600 V, V_GE

175 °C

= 15 V, T_vj=

60

55

50

45

40

35

30

25

20

15

10

5

10

1

0.1

0.01

0

5

10 15 20 25 30 35 40 45 50 55 60

0

15 30 45 60 75 90 105 120 135 150

switching times (typical), IGBT, Inverter

transient thermal impedance , IGBT, Inverter

t = f(R_G)

Z_th= f(t)

I_C= 75 A, V_CE= 600 V, V_GE

= 15 V, T_vj= 175 °C

10

1

0.1

0.01

0

5

10 15 20 25 30 35 40 45 50 55 60

0.001

0.01

0.1

1

10

Datasheet

12

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

reverse bias safe operating area (RBSOA), IGBT,

Inverter

dv/dt (typical), IGBT, Inverter

dv/dt = f(R_G)

I_C= 75 A, V_CE= 600 V, V_GE= 15 V, T_vj= 25 °C

I_C= f(V_CE

)

R_Goﬀ= 5.6 Ω, V_GE= 15 V, T_vj= 175 °C

200

6

5

4

3

2

1

0

175

150

125

100

75

50

25

0

200

400

600

800 1000 1200 1400

0

5

10 15 20 25 30 35 40 45 50 55 60

capacity characteristic (typical), IGBT, Inverter

C = f(V_CE

gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

)

f = 100 kHz, V_GE= 0 V, T_vj= 25 °C

I_C= 75 A, T_vj= 25 °C

100

15

10

5

10

1

0

-5

0.1

0.01

-10

-15

0

10 20 30 40 50 60 70 80 90 100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Datasheet

13

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

switching losses (typical), Diode, Inverter

E_rec= f(I_F)

R_Gon= 5.6 Ω, V_CE= 600 V

150

125

100

75

6

5

4

3

2

1

0

50

25

0

0.0

0.5

1.0

1.5

2.0

2.5

0

15 30 45 60 75 90 105 120 135 150

switching losses (typical), Diode, Inverter

E_rec= f(R_G)

transient thermal impedance , Diode, Inverter

Z_th= f(t)

V_CE= 600 V, I_F= 75 A

6

5

4

3

2

1

0

1

0.1

0.01

0

5

10 15 20 25 30 35 40 45 50 55 60

0.001

0.01

0.1

1

10

Datasheet

14

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

Forward characteristic (typical), Diode, Rectifier

Transient thermal impedance, Diode, Rectifier

I_F= f(V_F)

Z_th= f(t)

150

135

120

105

90

1

75

0.1

60

45

30

15

0

0.01

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001

0.01

0.1

1

output characteristic (typical), IGBT, Brake-Chopper

I_C= f(V_CE

V_GE= 15 V

forward characteristic (typical), Diode, Brake-

Chopper

I_F= f(V_F)

)

100

50

90

80

70

60

50

40

30

20

10

0

45

40

35

30

25

20

15

10

5

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

Datasheet

15

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

8 Characteristics diagrams

temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

100000

10000

1000

100

10

0

25

50

75

100

125

150

175

Datasheet

16

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

9 Circuit diagram

9

Circuit diagram

J

Figure 2

Datasheet

17

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

10 Package outlines

10

Package outlines

Infineon

Figure 3

Datasheet

18

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

11 Module label code

11

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

15

30

Example

71549142846550549911530

Figure 4

Datasheet

19

0.10

2021-06-23

FP75R12N2T7_B11

™

EconoPIM 2 module

Revision history

Document revision

Date of release Description of changes

0.10

2021-06-23

Initial version

Datasheet

20

0.10

2021-06-23

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-06-23

Published by

Infineon Technologies AG

81726 Munich, Germany

IMPORTANT NOTICE

Please note that this product is not qualified

according to the AEC Q100 or AEC Q101 documents

of the Automotive Electronics Council.

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

©

2021 Infineon Technologies AG

Except as otherwise explicitly approved by Infineon

Technologies in

a written document signed by

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

Document reference

IFX-ABB332-001

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	FP75R12N2T7_B11
厂家：	Infineon
描述：	PressFIT
文件：	总21页 (文件大小：672K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FP75R12N2T7_B11 [INFINEON]

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