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FS10R06VE3BOMA1 [INFINEON]

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-13;

FS10R06VE3BOMA1


元器件型号：	FS10R06VE3BOMA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-13 局域网栅晶体管
PDF文件：	总7页 (文件大小：390K)
下载文档：	下载PDF数据表文档文件
型号参数：FS10R06VE3BOMA1参数

FS10R06VL4B2

IGBT-Module IGBT-modules

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122 EUPEC

FS10R06XL4

IGBT-Modules

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61 EUPEC

FS10R12VT3

IGBT-Module IGBT-modules

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44 EUPEC

FS10R12VT3BOMA1

Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FS10R12YT3

IGBT-Module IGBT-modules

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42 EUPEC

FS10R12YT3BOMA1

Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

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0 INFINEON

FS10RM18A

TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) | TO-247VAR

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24 ETC

FS10SM06

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-247VAR

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105 ETC

FS10SM-06

Power Field-Effect Transistor, 10A I(D), 60V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 MITSUBISHI

FS10SM10

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-247VAR

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49 ETC

FS10SM-10

HIGH-SPEED SWITCHING USE

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32 MITSUBISHI

FS10SM-10

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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85 POWEREX

FS10SM-10

MITSUBISHI Nch POWER MOSFET

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41 RENESAS

FS10SM-10

Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 POWEREX

FS10SM12

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247VAR

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27 ETC

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