FS150R12KE3GBOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-29;
FS150R12KE3GBOSA1
型号: FS150R12KE3GBOSA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-29

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文件: 总8页 (文件大小:580K)
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FS150R12KF4

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)

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45 ETC

FS150R12KT3

IGBT-Module

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329 EUPEC

FS150R12KT3

EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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116 EUPEC

FS150R12KT3_04

EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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31 EUPEC

FS150R12KT4

EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode

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306 INFINEON

FS150R12KT4_B11

EconoPACK3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode

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76 INFINEON

FS150R12KT4_B9

EconoPACK3 module with trench/fieldstop IGBT4 and doubled mounting Emitter Controlled 4 diode

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90 INFINEON

FS150R12KT4B11BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FS150R12KT4B9BDLA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-33

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0 INFINEON

FS150R12KT4BOSA1

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FS150R12PT4

EconoPACK?4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC

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36 INFINEON

FS150R12PT4BOSA1

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-20

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1 INFINEON

FS150R16KF4

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.6KV V(BR)CES | 150A I(C)

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43 ETC

FS150R17KE3G

EconoPACK module with trench/fieldstop IGBT and EmCon3 diode

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15 EUPEC

FS150R17KE3GBOSA1

Insulated Gate Bipolar Transistor, 240A I(C), 1700V V(BR)CES, N-Channel, ECONOPACK-29

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1 INFINEON