FS200R10W3S7_B11 [INFINEON]
PressFIT;
| 型号： | FS200R10W3S7_B11 |
| 厂家： | 
Infineon |
| 描述： | PressFIT |
| 文件： | 总14页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS200R10W3S7_B11
™
EasyPACK module
™
™
EasyPACK module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and PressFIT / NTC
Features
• Electrical features
- VCES = 950 V
- IC nom = 200 A / ICRM = 300 A
- Low VCE,sat
- Tvj,op = 150°C
- TRENCHSTOPTM IGBT7
• Mechanical features
- Al2O3 substrate with low thermal resistance
- High power and thermal cycling capability
- Integrated NTC temperature sensor
- PressFIT contact technology
Potential applications
• Motor drives
• Energy storage systems
• Auxiliary inverters
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
1
2
3
4
5
6
7
8
Datasheet
2
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.2
Unit
Isolation test voltage
Internal isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 1 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
11.2
6.8
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
9.4
Clearance
5.5
Comparative tracking index
>400
140
Relative thermal index
(electrical)
RTI
housing
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
12
nH
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
3.5
mΩ
Storage temperature
Tstg
-40
1.3
125
1.5
°C
Mounting torque for module
mounting
M
- Mounting according to M5, Screw
valid application note
Nm
Weight
G
78
g
Note:
The current under continuous operation is limited to 25A rms per connector pin.
2
IGBT, Inverter
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
950
Unit
Collector-emitter voltage
VCES
ICN
Tvj = 25 °C
TH = 65 °C
V
A
Implemented collector
current
200
Continuous DC collector
current
ICDC
ICRM
VGES
Tvj max = 175 °C
tP = 1 ms
130
300
20
A
A
V
Repetitive peak collector
current
Gate-emitter peak voltage
Datasheet
3
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 150 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
1.69
1.87
1.91
5.10
0.46
0.75
13
1.98
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 3.25 mA, VCE = VGE, Tvj = 25 °C
4.35
5.85
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
nF
nF
Reverse transfer capacitance
0.04
Collector-emitter cut-off
current
VCE = 950 V, VGE = 0 V
Tvj = 25 °C
0.053 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 150 A, VCE = 500 V,
VGE = 15 V, RGon = 12 Ω
Tvj = 25 °C
0.120
0.120
0.120
0.050
0.050
0.050
0.290
0.310
0.320
0.020
0.080
0.090
10.3
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 150 A, VCE = 500 V,
VGE = 15 V, RGon = 12 Ω
µs
µs
Turn-off delay time
(inductive load)
IC = 150 A, VCE = 500 V,
VGE = 15 V, RGoff = 12 Ω
Fall time (inductive load)
IC = 150 A, VCE = 500 V,
VGE = 15 V, RGoff = 12 Ω
µs
Turn-on energy loss per
pulse
Eon
IC = 150 A, VCE = 500 V,
mJ
mJ
L = 35 nH, VGE = 15 V,
σ
12.2
RGon = 12 Ω, di/dt = 2300
12.9
A/µs (Tvj = 150 °C)
Turn-off energy loss per
pulse
Eoff
IC = 150 A, VCE = 500 V,
3.88
L = 35 nH, VGE = 15 V,
σ
5.89
RGoff = 12 Ω, dv/dt =
6.41
7900 V/µs (Tvj = 150 °C)
Thermal resistance, junction
to heat sink
RthJH
Tvj op
per IGBT, λgrease= 3.3 W/(m*K)
0.387
K/W
°C
Temperature under
switching conditions
-40
150
Datasheet
4
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
3 Diode, Inverter
3
Diode, Inverter
Table 5
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
950
V
Implemented forward
current
IFN
IF
IFRM
I2t
200
150
400
A
A
Continuous DC forward
current
Repetitive peak forward
current
I2t - value
tP = 1 ms
A
VR = 0 V, tP = 10 ms
Tvj = 125 °C
Tvj = 150 °C
1520
1480
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 150 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
2.33
2.12
2.07
73.8
108
2.57
V
Peak reverse recovery
current
IF = 150 A, VR = 500 V,
VGE = -15 V, -diF/dt =
2300 A/µs (Tvj = 150 °C)
A
118
Recovered charge
IF = 150 A, VR = 500 V,
VGE = -15 V, -diF/dt =
2300 A/µs (Tvj = 150 °C)
6.19
11.7
13.6
1.1
µC
mJ
Reverse recovery energy
Erec
IF = 150 A, VR = 500 V,
VGE = -15 V, -diF/dt =
2300 A/µs (Tvj = 150 °C)
2.51
3.13
0.530
Thermal resistance, junction
to heat sink
RthJH
Tvj op
per diode, λgrease= 3.3 W/(m*K)
K/W
°C
Temperature under
switching conditions
-40
150
Datasheet
5
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
4 NTC-Thermistor
4
NTC-Thermistor
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
5
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
6
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
5 Characteristics diagrams
5
Characteristics diagrams
Output characteristic (typical), IGBT, Inverter
IC = f(VCE
Output characteristic field (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 150 °C
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
Switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 12 Ω, RGon = 12 Ω, VCE = 500 V, VGE
=
15 V
300
30
27
24
21
18
15
12
9
250
200
150
100
50
6
3
0
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
0
30 60 90 120 150 180 210 240 270 300
Datasheet
7
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
5 Characteristics diagrams
Switching losses (typical), IGBT, Inverter
Switching times (typical), IGBT, Inverter
E = f(RG)
t = f(IC)
IC = 150 A, VCE = 500 V, VGE
=
15 V
RGoff = 12 Ω, RGon = 12 Ω, VCE = 500 V, VGE
°C
= 15 V, Tvj = 150
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100 110 120
0
30 60 90 120 150 180 210 240 270 300
Switching times (typical), IGBT, Inverter
Transient thermal impedance , IGBT, Inverter
t = f(RG)
Zth = f(t)
IC = 150 A, VCE = 500 V, VGE
= 15 V, Tvj = 150 °C
10
10
1
1
0.1
0.1
0.01
0.001
0.01
0
10 20 30 40 50 60 70 80 90 100 110 120
0.001
0.01
0.1
1
10
Datasheet
8
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
5 Characteristics diagrams
Reverse bias safe operating area (RBSOA), IGBT,
Inverter
Capacity characteristic (typical), IGBT, Inverter
C = f(VCE
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
)
IC = f(VCE
)
RGoff = 12 Ω, VGE = 15 V, Tvj = 150 °C
350
100
300
250
200
150
100
50
10
1
0.1
0.01
0
0
100 200 300 400 500 600 700 800 900 1000
0
10 20 30 40 50 60 70 80 90 100
Gate charge characteristic (typical), IGBT, Inverter
Forward characteristic (typical), Diode, Inverter
VGE = f(QG)
IF = f(VF)
IC = 200 A, Tvj = 25 °C
15
10
5
300
250
200
150
100
50
0
-5
-10
-15
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Datasheet
9
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
5 Characteristics diagrams
Switching losses (typical), Diode, Inverter
Erec = f(IF)
Switching losses (typical), Diode, Inverter
Erec = f(RG)
RGon = 12 Ω, VR = 500 V
IF = 200 A, VR = 500 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
30 60 90 120 150 180 210 240 270 300
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Transient thermal impedance, Diode, Inverter
Zth = f(t)
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
10
100000
10000
1000
1
0.1
100
0.01
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Datasheet
10
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
6 Circuit diagram
6
Circuit diagram
J
Figure 1
Datasheet
11
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
7 Package outlines
7
Package outlines
pcb hole pattern
r
4x P3,5
e
h
s
a
dimensioned for EJOT Delta PT WN5451 25
choose length according to pcb thickness
4x
B
4x
L
w
(P2,3) Dome
2
,
4
P0,25ABC
P
d
a
e
h
w
P1
P2/3
N3
N1/2
e
r
c
24
20,8
17,6
s
26
14
o
t
E6
G6
E4
G4
g
n
i
2
1
d
,
1
r
0
P
o
c
B
x
c
4
2
a
,
5
P
x
2
5
0
4
,
0
G1
E2
G2
G3
E3
0
B
4,8
8
2
6
E1
C
B
14,4
17,6
20,8
24
A
5
14
26
2
,
G5
E5
0
P
x
2
L
EU
T1 T2
EV
EW
0
8
3
3
3
3
8
6
6
4
4
4
4
,
,
,
,
,
,
C
9
9
7
7
4
4
0
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
4
4
4
4
4
4
0
8
6
2
0
8
6
2
0
0
2
6
8
2
6
8
0
4
4
4
4
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
6
2
9
3
0
6
3
7
7
3
6
3
9
2
6
6
0
4
4
0
6
1
1
1
1
1
1
3
3
2
2
2
2
2
3
3
2
2
109,9B0,45
- Details about hole specification for contacts refer to AN2009-01 chapter 2
A
- Diameters of drill P1,15mm
- Copper thickness in hole 25~50um
1
,
0
)
)
2
B
4
1
,
(
2
,
6
1
2
(
1
recommended design hight
Figure 2
8
Module label code
Module label code
Code format
Data Matrix
ASCII text
16x16
Barcode Code128
Code Set A
23 digits
Encoding
Symbol size
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Example
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
30
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
12
Revision 1.00
2022-01-13
FS200R10W3S7_B11
™
EasyPACK module
Revision history
Revision history
Document revision
Date of release Description of changes
0.20
1.00
2021-03-25
2022-01-13
Final datasheet
Datasheet
13
Revision 1.00
2022-01-13
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-01-13
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
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©
2022 Infineon Technologies AG
All Rights Reserved.
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aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAE224-002
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
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application.
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