FS380R12A6T4B_技术文档

HybridPACK™ꢀDriveꢀModule

FS380R12A6T4B

FinalꢀDataꢀSheet

V3.1,ꢀ2019-09-10

AutomotiveꢀHighꢀPower

FS380R12A6T4B

HybridPACK™ꢀDriveꢀModule

1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription

HybridPACK™ꢀDriveꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT4ꢀandꢀEmitterꢀControlledꢀ4ꢀdiode

T

V_CES= 1200 V

I_C= 380 A

Typical Applications

Description

• Automotive Applications

• Hybrid Electrical Vehicles (H)EV

• Motor Drives

The HybridPACK^TMDrive is a very compact

six-pack module (1200V/380A) optimized for hybrid

and electric vehicles. The power module

implements the IGBT4 generation. The chipset has

high short circuit ruggedness and come with a

matching efficient and soft switching Emcon4 diode.

• Commercial Agriculture Vehicles

Electrical Features

• Blocking voltage 1200V

• Low V_CEsat

• Low Switching Losses

• Low Qg and Crss

• Low Inductive Design

• T_{vj op}= 150°C

The new HybridPACK^TMDrive power module family

comes with mechanical guiding elements

supporting easy assembly processes for customers.

Furthermore, the press-fit pins for the signal

terminals avoid additional time consuming selective

solder processes, which provides cost savings on

system level and increases system reliability. The

direct cooled baseplate with PinFin structure and

optimized ceramic material in the FS380R12A6T4B

product best utilizes the implemented chipset and

shows superior thermal characteristics. Due to the

high clearance & creepage distances, the module

well suited for increased system working voltages

and supports modular inverter approaches.

Mechanical Features

• 4.2kV DC 1sec Insulation

• High Creepage and Clearance Distances

• High Power Density

• High Performance Si3N4 Ceramic

• Direct Cooled PinFin Base Plate

• Guiding elements for PCB and cooler assembly

• Integrated NTC temperature sensor

• PressFIT Contact Technology

• RoHS compliant

• UL 94 V0 module frame

Product Name

Ordering Code

SP001632438

FS380R12A6T4B

Final Data Sheet

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V3.1,ꢀꢀ2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

2

IGBT,Inverter

2.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_CES

I_CN

Value

1200¹⁾

380

Unit

V

Collector-emitter voltage

T_vj= 25°C

Implemented collector current

Continuous DC collector current

Repetitive peak collector current

Total power dissipation

A

T_F= 100°C, T_{vj max}= 175°C

t_P= 1 ms

I_{C nom}

I_CRM

250²⁾

A

760

A

T_F= 75°C, T_{vj max}= 175°C

P_tot

870²⁾

+/-20

W

V

Gate-emitter peak voltage

V_GES

2.2 Characteristic Values

min. typ. max.

Collector-emitter saturation voltage

I_C= 250 A, V_GE= 15 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

1.60 1.95

1.85

1.90

V_{CE sat}

V

I_C= 380 A, V_GE= 15 V

T_vj= 25°C

T_vj= 150°C

1,95

2,40

Gate threshold voltage

Gate charge

I_C= 9.75 mA, V_CE= V_GE

T_vj= 25°C

V_GEth

Q_G

5.20 5.80 6.40

V

µC

Ω

V_GE= -8 V ... 15 V, V_CE= 600V

1.75

2.5

Internal gate resistor

T_vj= 25°C

R_Gint

C_ies

C_res

I_CES

I_GES

Input capacitance

f = 1 MHz, V_CE= 25 V, V_GE= 0 V

V_CE= 1200 V, V_GE= 0 V

19.0

0.81

1.0

nF

mA

nA

Reverse transfer capacitance

Collector-emitter cut-off current

Gate-emitter leakage current

Turn-on delay time, inductive load

V_CE= 0 V, V_GE= 20 V

400

I_C= 250 A, V_CE= 600 V

V_GE= -8 / +15 V

R_Gon= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.13

0.14

t_{d on}

µs

Rise time, inductive load

I_C= 250 A, V_CE= 600 V

V_GE= -8 / +15 V

R_Gon= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.05

t_r

Turn-off delay time, inductive load

Fall time, inductive load

I_C= 250 A, V_CE= 600 V

V_GE= -8 / +15 V

R_Goff= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.47

0.57

0.60

t_{d off}

I_C= 250 A, V_CE= 600 V

V_GE= -8 / +15 V

R_Goff= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

0.10

0.20

0.22

t_f

Turn-on energy loss per pulse

I_C= 250 A, V_CE= 600 V, L_S= 20 nH

V_GE= -8 / +15 V

R_Gon= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

19.0

26.5

29.0

E_on

mJ

di/dt (T_vj25°C) = 4000 A/µs

di/dt (T_vj150°C) = 3800 A/µs

Turn-off energy loss per pulse

I_C= 250 A, V_CE= 600 V, L_S= 20 nH

V_GE= -8 / +15 V

R_Goff= 2.2 Ω

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

18.5

28.0

31.0

E_off

mJ

A

dv/dt (T_vj25°C) = 3300 V/µs

dv/dt (T_vj150°C) = 3000 V/µs

SC data

V_GE≤ 15 V, V_CC= 800 V

V_CEmax= V_CES-L_sCE·di/dt

t_P≤ 8 µs, T_vj= 25°C

t_P≤ 6 µs, T_vj= 150°C

1500

1200

I_SC

Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, T_F= 75°C

Temperature under switching conditions t_opcontinuous

R_thJF

T_{vj op}

0.100³⁾0.115³⁾K/W

-40

150 °C

¹⁾For applications with applied blocking voltage > 60% of the specified maximum collector-emitter voltage, we recommend to evaluate the impact of the

cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office.

²⁾Verified by characterization / design not by test.

³⁾Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

Final Data Sheet

3

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

3

Diode, Inverter

3.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_RRM

I_FN

Value

1200¹⁾

380

Unit

V

Repetitive peak reverse voltage

Implemented forward current

Continuous DC forward current

Repetitive peak forward current

I²t - value

T_vj= 25°C

A

I_F

250²⁾

A

t_P= 1 ms

I_FRM

760

A

V_R= 0 V, t_P= 10 ms, T_vj= 125°C

V_R= 0 V, t_P= 10 ms, T_vj= 150°C

10000

8800

A²s

I²t

3.2 Characteristic Values

min. typ. max.

Forward voltage

I_F= 250 A, V_GE= 0 V

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

1.60 2.00

1.55

V_F

V

I_F= 380 A, V_GE= 0 V

T_vj= 25°C

T_vj= 150°C

1,85

1,80

Peak reverse recovery current

Recovered charge

I_F= 250 A, - di_F/dt = 3800 A/µs (T_vj= 150°C) T_vj= 25°C

245

300

315

V_R= 600 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

I_RM

A

I_F= 250 A, - di_F/dt = 3800 A/µs (T_vj= 150°C) T_vj= 25°C

24.0

42.5

48.0

V_R= 600 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

Q_r

µC

mJ

Reverse recovery energy

I_F= 250 A, - di_F/dt = 3800 A/µs (T_vj= 150°C) T_vj= 25°C

10.0

17.5

19.5

V_R= 600 V

V_GE= -8 V

T_vj= 125°C

T_vj= 150°C

E_rec

Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, T_F= 75°C

R_thJF

T_{vj op}

0.140³⁾0.160³⁾K/W

Temperature under switching conditions

t_opcontinuous

-40

150

°C

4

NTC-Thermistor

min. typ. max.

Parameter

Conditions

Symbol

R₂₅

Value

Unit

kΩ

%

Rated resistance

Deviation of R100

Power dissipation

B-value

T_C= 25°C

5.00

T_C= 100°C, R₁₀₀= 493 Ω

T_C= 25°C

∆R/R

P₂₅

5

20.0 mW

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

K

B-value

Specification according to the valid application note.

¹⁾For applications with applied blocking voltage > 60% of the specified maximum collector-emitter voltage, we recommend to evaluate the impact of the

cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office.

²⁾Verified by characterization / design not by test.

³⁾Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

Final Data Sheet

4

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

5

Module

Parameter

Conditions

Symbol

V_ISOL

Value

4.2

Unit

kV

A

Isolation test voltage

RMS, f = 0 Hz, t = 1 sec

T_F= 75°C, T_Ct= 105°C

Maximum RMS module terminal current

Material of module baseplate

Internal isolation

I_tRMS

550

Cu+Ni¹⁾

basic insulation (class 1, IEC 61140)

Si₃N₄

Creepage distance

terminal to heatsink

terminal to terminal

9.0

d_Creep

mm

Clearance

terminal to heatsink

terminal to terminal

4.5

d_Clear

CTI

Comperative tracking index

> 200

min. typ. max.

Pressure drop in cooling circuit

∆V/∆t = 10.0 dm³/min; T_F= 75°C

∆p

64²⁾

mbar

bar

Maximum pressure in cooling circuit

T_baseplate< 40°C

T_baseplate> 40°C

(relative pressure)

2.5

2.0

p

Stray inductance module

Module lead resistance, terminals - chip

Storage temperature

L_sCE

R_CC'+EE'

T_stg

8.0

nH

mΩ

°C

T_F= 25 °C, per switch

0.75

-40

125

Mounting torque for modul mounting

Weight

Screw M4 baseplate to heatsink

M

1.80 2.00 2.20³⁾Nm

G

720

g

¹⁾Ni plated Cu baseplate.

²⁾Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.

³⁾According to application note AN-HPDPERF-ASSEMBLY.

Final Data Sheet

5

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

6

Characteristics Diagrams

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

)

V_GE= 15 V

T_vj= 150°C

600

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

V_GE= 19V

V_GE= 17V

V_GE= 15V

V_GE= 13V

V_GE= 11V

V_GE= 9V

550

500

450

400

350

300

250

200

150

100

50

550

500

450

400

350

300

250

200

150

100

50

0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

V_CE[V]

transfer characteristic IGBT,Inverter (typical)

I_C= f (V_GE

switching losses IGBT,Inverter (typical)

E_on= f (I_C), E_off= f (I_C),

)

V_CE= 20 V

V_GE= +15 V / -8 V, R_Gon= 2.2 Ω, R_Goff= 2.2 Ω, V_CE= 600 V

600

180

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

E_on, T_vj= 125°C

E_off, T_vj= 125°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

550

500

450

400

350

300

250

200

150

100

50

160

140

120

100

80

60

40

20

0

5

0

6

7

8

9

10

11

12

13

0

100

200

300

I_C[A]

400

500

600

V_GE[V]

Final Data Sheet

6

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FS380R12A6T4B

HybridPACK™ Drive Module

switching losses IGBT,Inverter (typical)

E_on= f (R_G), E_off= f (R_G),

transient thermal impedance IGBT,Inverter

Z_thJF= f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol

V_GE= +15V / -8V, I_C= 250 A, V_CE= 600V

Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY

120

1

E_on, T_vj= 125°C

Z_thJF: IGBT

110

100

90

80

70

60

50

40

30

20

10

0

E_off, T_vj= 125°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

0,1

0,01

i:

1

2

3

4

r_i[K/W]: 0,007 0,038 0,05 0,02

τ_i[s]:

0,001 0,03 0,25 1,5

0,001

0

2

4

6

8

10 12 14 16 18 20 22

R_G[Ω]

0,01

0,1

t [s]

1

10

reverse bias safe operating area IGBT,Inverter (RBSOA)

I_C= f (V_CE);

thermal impedance IGBT,Inverter

R_thJF= f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol

V_GE= +15V / -8V, R_Goff= 2.2 Ω, T_vj= 150°C

cooler design according to AN-HPDPERF-ASSEMBLY

800

700

600

500

400

300

0,129

R_thJF: IGBT

0,127

0,125

0,123

0,121

0,119

0,117

0,115

0,113

0,111

0,109

200

I_C, Modul

I_C, Chip

100

0

200

400

600

800

1000

1200

1400

4

5

6

7

8

9

10

11

12

13

14

V_CE[V]

∆V/∆t [dm³/min]

Final Data Sheet

7

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

forward characteristic of Diode, Inverter (typical)

I_F= f (V_F)

switching losses Diode, Inverter (typical)

E_rec= f (I_F),

R_Gon= 2.2 Ω, V_CE= 600 V

600

30,0

T_vj= 25°C

T_vj= 125°C

T_vj= 150°C

E_rec, T_vj= 125°C

E_rec, T_vj= 150°C

550

500

450

400

350

300

250

200

150

100

50

27,0

24,0

21,0

18,0

15,0

12,0

9,0

6,0

3,0

0

0,0

0,3

0,6

0,9

1,2

V_F[V]

1,5

1,8

2,1

2,4

0

100

200

300

I_F[A]

400

500

600

switching losses Diode, Inverter (typical)

E_rec= f (R_G),

transient thermal impedance Diode, Inverter

Z_thJF= f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol

I_F= 250 A, V_CE= 600 V

Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY

24

22

20

18

16

14

12

10

8

1

E_rec, T_vj= 125°C

E_rec, T_vj= 150°C

Z_thJC: Diode

0,1

0,01

6

4

i:

1

2

3

4

r_i[K/W]: 0,015 0,07 0,055 0,02

τ_i[s]:

0,001 0,03 0,25 1,5

2

0

0,001

0

2

4

6

8

10 12 14 16 18 20 22

R_G[Ω]

0,01

0,1

t [s]

1

10

Final Data Sheet

8

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

thermal impedance Diode, Inverter

NTC-Thermistor-temperature characteristic (typical)

R_thJF= f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol

cooler design according to AN-HPDPERF-ASSEMBLY

R = f (T)

0,174

100000

R_thJF: Diode

R_typ

0,172

0,170

0,168

0,166

0,164

0,162

0,160

0,158

0,156

10000

1000

100

4

5

6

7

8

9

10

11

12

13

14

-40 -20

0

20

40

60

T_C[°C]

80 100 120 140 160

∆V/∆t [dm³/min]

pressure drop in cooling circuit

∆p = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol

cooler design according to AN-HPDPERF-ASSEMBLY

120

∆p: Modul

100

80

60

40

20

0

4

5

6

7

8

9

10

11

12

13

14

∆V/∆t [dm³/min]

Final Data Sheet

9

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

7

Circuit diagram

P1

P2

P3

T1

T

C1

C3

C5

T2

G1

E1

G3

E3

G5

E5

T3

U

V

W

T

C2

C4

C6

T4

T5

G2

E2

G4

E4

G6

E6

T

T6

N1

N2

N3

Final Data Sheet

10

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

8

Package outlines

Ø5,3±0,15{

B

n0,6 FG

Ø1,2 DE

6x(N1-N3;P1-P3)

A

j

F

G

6x

n5,5±0,1

6x

14±0,2 _6x

D

6x

22,25±0,4

16,25

9,75±0,4

1±0,15

16±0,2

n0,5 DE

A

j

Ø1,6 BC

Y

B

N2

P2

P1

N1

N3

P3

8x

5±0,4

0

X

0

15,5±0,5

4±0,3

C2

E2

G2

C4

E4 G4

E6 G6

C6

T1

T3

T4

T5

T6

6,35±0,5

T2

G3E3

G5

G1E1

E5

66,5±0,5

C1

C3

C5

A

82

87±0,4

90,75±0,4

98,25

82

C

V

U

W

C

1±0,15

3x

E

3x

104,25±0,4

n5,5±0,1

14±0,2

H

3x

n0,6 H I

A

j

Ø1,2 DE

I ^3x(U;V;W)

B

S

X-Y ( 1 : 1 )

8x

D2

D3

L

D1

8x

D4

Y

N2

P2

N3

N1

P1

P3

n0,8 LM

Ø1,6 B C

9,3±0,2

A

j

0

A

M

c 0,3 CZ

8

6x common zones:

D1-D2

X

18,85

dimensioned for

EJOT Delta PT

WN5451 30 x

E4

G4

E2

C4

G6

C2

C6

^G2Z

E6

D2-D3

origin axis generated by

C2;E2;G2;C4;E4;G4;C6;E6;G6

K

D3-D4

J

D8-D7

D7-D6

R

D6-D5

T

51,85

59,35

67,15

69,85

74,1

82

T1

T3

T4

T5

T6

T2

G1 E1

G3 E3

G5 E5

D5

C3

C1

C5

3,94±0,5

refers

C

D8

U

V

W

to local CZ

D7

D6

Area R;S or T

(19,75)

Z ( 1,5 : 1 )

Drawing: D00138581_04

gen. tolerances

edges

surface

1. DIN

DIN EN ISO

**

KJ

BC

DIN ISO 13715

A

16742-TG4

2. DIN ISO

2768-mK

1302

j

24x

**

E2

C2

G2

All dimensions refer to module in

delivery condition

Pin positions checked

with pin gauge

according to Application

Note AN-HPD-ASSEMBLY

Final Data Sheet

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V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

9

Label Codes

9.1 Module Code

Code Format

Data Matrix

Encoding

ASCII Text

Symbol Size

Standard

16x16

IEC24720 and IEC16022

Code Content

Content

Digit

1 - 5

6 - 11

12 - 19

20 - 21

22 - 23

Example (below)

71549

142846

55054991

15

Module Serial Number

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

30

Example

71549142846550549911530

9.2 Packing Code

Code Format

Code128

Code Set A

34 digits

Encoding

Symbol Size

Standard

IEC8859-1

Code Content

Content

Identifier

X

1T

S

9D

Q

Digit

2 - 9

12 - 19

21 - 25

28 - 31

33 - 34

Example (below)

95056609

2X0003E0

754389

1139

15

Backend Construction Number

Production Lot Number

Serial Number

Date Code

Box Quantity

Example

X950566091T2X0003E0S754389D1139Q15

Final Data Sheet

12

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

Revision History

Major changes since previous revision

Revision History

Reference

V1.0

Date

Description

2017-05-11

2018-08-27

2019-05-09

2019-09-10

Target datasheet

Preliminary datasheet

Final datasheet

V2.0

V3.0

V3.1

Correction of product weight and document cross references

Final Data Sheet

13

V3.1, 2019-09-10

FS380R12A6T4B

HybridPACK™ Drive Module

Terms & Conditions of usage

Edition 2018-08-01

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon

Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office

(http://www.infineon.com)

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the

nearest Infineon Technologies Office.

These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life

support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact

your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review

product requirements and reliability testing.

Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class

III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they

fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Trademarks

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,

DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,

HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,

PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,

SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,

µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of

DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of

Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION

FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor

Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,

MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave

Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun

Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.

TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.

VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of

WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last update

2011-11-11

Final Data Sheet

14

V3.1, 2019-09-10

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG


型号：	FS380R12A6T4B
厂家：	Infineon
描述：	Short Tabs
文件：	总15页 (文件大小：1925K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FS380R12A6T4B [INFINEON]

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