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FS50R07N2E4 [INFINEON]

EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC; EconoPACK2模块海沟/场终止IGBT 4和发射极控制二极管4和NTC

FS50R07N2E4


元器件型号：	FS50R07N2E4
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC EconoPACK2模块海沟/场终止IGBT 4和发射极控制二极管4和NTC 二极管双极性晶体管
PDF文件：	总9页 (文件大小：535K)
下载文档：	下载PDF数据表文档文件
型号参数：FS50R07N2E4参数

FS50R07N2E4_B11

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25

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0 INFINEON

FS50R07N2E4B11BOSA1

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-25

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1 INFINEON

FS50R07N2E4BOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FS50R07U1E4

Insulated Gate Bipolar Transistor,

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0 INFINEON

FS50R07U1E4BPSA1

Insulated Gate Bipolar Transistor,

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0 INFINEON

FS50R07W1E3B11ABOMA1

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-22

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2 INFINEON

FS50R10KF2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)

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26 ETC

FS50R12KE3

HÃ¶chstzulÃ¤ssige Werte / maximum rated values

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210 INFINEON

FS50R12KE3BOSA1

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-28

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1 INFINEON

FS50R12KF

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 50A I(C)

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90 ETC

FS50R12KF2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 50A I(C)

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29 ETC

FS50R12KT3

echnische Information / technical information

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435 EUPEC

FS50R12KT3

EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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65 EUPEC

FS50R12KT3_04

EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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19 EUPEC

FS50R12KT4_B11

EconoPACK2 module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

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38 INFINEON

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