FS75R17W2E4P_B11 [INFINEON]
PressFIT;
| 型号： | FS75R17W2E4P_B11 |
| 厂家： | 
Infineon |
| 描述： | PressFIT |
| 文件： | 总14页 (文件大小：608K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS75R17W2E4P_B11
™
EasyPACK module
™
EasyPACK module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode and PressFIT / NTC / TIM
Features
• Electrical features
- VCES = 1700 V
- IC nom = 75 A / ICRM = 150 A
- Low switching losses
- Low VCE,sat
• Mechanical features
- Al2O3 substrate with low thermal resistance
- PressFIT contact technology
- Rugged mounting due to integrated mounting clamps
- Compact design
- Pre-applied thermal interface material
Potential applications
• UPS systems
• Air conditioning
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
1
2
3
4
5
6
7
8
Datasheet
2
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
4.0
Unit
Isolation test voltage
Internal isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 1 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
11.5
6.3
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
10.0
5.0
Clearance
Comparative tracking
index
> 200
Relative thermal index
(electrical)
RTI
housing
140
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
40
Unit
Min.
Max.
Stray inductance module
LsCE
nH
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
4
mΩ
Storage temperature
Tstg
-40
40
125
125
°C
°C
Maximum baseplate
operation temperature
TBPmax
Mounting force per clamp
Weight
F
80
N
g
G
42
Note:
The current under continuous operation is limited to 25 Arms per connector pin.
Storage and shipment of modules with TIM => see AN2012-07.
2
IGBT, Inverter
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1700
75
Unit
Collector-emitter voltage
VCES
ICN
Tvj = 25 °C
TH = 65 °C
V
A
Implemented collector
current
Continuous DC collector
current
ICDC
Tvj max = 150 °C
45
A
(table continues...)
Datasheet
3
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
2 IGBT, Inverter
Table 3
(continued) Maximum rated values
Symbol Note or test condition
ICRM tp limited by Tvj op
Parameter
Values
Unit
Repetitive peak collector
current
150
A
Gate-emitter peak voltage
VGES
20
V
Table 4
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.95
2.35
2.45
5.80
0.9
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCE sat IC = 75 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
2.30
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 3 mA, VCE = VGE, Tvj = 25 °C
5.35
6.25
V
VGE = 15 V, VCC = 900 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
8.5
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
6.8
nF
nF
Reverse transfer
capacitance
Cres
0.22
Collector-emitter cut-off
ICES
IGES
tdon
VCE = 1700 V, VGE = 0 V
Tvj = 25 °C
35
µA
nA
µs
current
Gate-emitter leakage
current
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
Turn-on delay time
(inductive load)
IC = 75 A, VCC = 900 V,
VGE = 15 V, RGon = 1 Ω
Tvj = 25 °C
0.170
0.188
0.193
0.031
0.035
0.036
0.405
0.532
0.568
0.288
0.526
0.598
17.8
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 75 A, VCC = 900 V,
VGE = 15 V, RGon = 1 Ω
µs
µs
Turn-off delay time
(inductive load)
IC = 75 A, VCC = 900 V,
VGE = 15 V, RGoff = 1 Ω
Fall time (inductive load)
IC = 75 A, VCC = 900 V,
VGE = 15 V, RGoff = 1 Ω
µs
Turn-on energy loss per
pulse
Eon
IC = 75 A, VCC = 900 V,
mJ
L = 35 nH, VGE = 15 V,
σ
24.8
RGon = 1 Ω, di/dt = 1800
27.3
A/µs (Tvj = 150 °C)
(table continues...)
Datasheet
4
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
3 Diode, Inverter
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
15.7
Unit
Min.
Max.
Turn-off energy loss per
pulse
Eoff
IC = 75 A, VCC = 900 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
mJ
L = 35 nH, VGE = 15 V,
σ
25.4
RGoff = 1 Ω, dv/dt = 3050
28.2
V/µs (Tvj = 150 °C)
SC data
ISC
VGE ≤ 15 V, VCC = 1000 V, tP ≤ 10 µs,
VCEmax=VCES-LsCE*di/dt Tvj=150 °C
350
A
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per IGBT, Valid with IFX pre-applied Thermal
Interface Material
0.632 K/W
Temperature under
switching conditions
-40
150
°C
3
Diode, Inverter
Table 5
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
1700
V
Continuous DC forward
current
IF
IFRM
I2t
50
A
A
Repetitive peak forward
current
I2t - value
tP = 1 ms
100
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 150 °C
425
390
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.80
1.90
1.95
145
Unit
Min.
Max.
Forward voltage
VF
IRM
Qr
IF = 50 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
2.20
V
Peak reverse recovery
current
VCC = 900 V, IF = 50 A,
VGE = -15 V, -diF/dt =
1600 A/µs (Tvj = 150 °C)
A
152
154
Recovered charge
VCC = 900 V, IF = 50 A,
VGE = -15 V, -diF/dt =
1600 A/µs (Tvj = 150 °C)
12.6
19
µC
21.6
(table continues...)
Datasheet
5
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
4 NTC-Thermistor
Table 6
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
9.1
Unit
Min.
Max.
Reverse recovery energy
Erec
VCC = 900 V, IF = 50 A,
VGE = -15 V, -diF/dt =
1600 A/µs (Tvj = 150 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
mJ
15.8
17.9
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per diode, Valid with IFX pre-applied
Thermal Interface Material
1.16
150
K/W
°C
Temperature under
switching conditions
-40
4
NTC-Thermistor
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
6
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
5 Characteristics diagrams
5
Characteristics diagrams
Output characteristic (typical), IGBT, Inverter
IC = f(VCE
Output characteristic field (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 150 °C
150
150
135
120
105
90
135
120
105
90
75
60
45
30
15
0
75
60
45
30
15
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
Switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 1 Ω, RGon = 1 Ω, VCC = 900 V, VGE = 15 V
150
80
135
120
105
90
70
60
50
40
30
20
10
0
75
60
45
30
15
0
5
6
7
8
9
10
11
12
13
0
15 30 45 60 75 90 105 120 135 150
Datasheet
7
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
5 Characteristics diagrams
Switching losses (typical), IGBT, Inverter
Transient thermal impedance , IGBT, Inverter
E = f(RG)
Zth = f(t)
IC = 75 A, VCC = 900 V, VGE
=
15 V
40
1
35
30
25
20
15
10
5
0.1
0
0.01
0
1
2
3
4
5
6
7
8
9
10
0.001
0.01
0.1
1
10
Reverse bias safe operating area (RBSOA), IGBT,
Inverter
Forward characteristic (typical), Diode, Inverter
IF = f(VF)
IC = f(VCE
)
RGoff = 1 Ω, VGE = 15 V, Tvj = 150 °C
180
100
75
50
25
0
160
140
120
100
80
60
40
20
0
0
200 400 600 800 1000 1200 1400 1600 1800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Datasheet
8
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
5 Characteristics diagrams
Switching losses (typical), Diode, Inverter
Erec = f(IF)
Switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 900 V, RG = 1 Ω
VCE = 900 V, IF = 50 A
25
20
15
10
5
20
18
16
14
12
10
0
0
10 20 30 40 50 60 70 80 90 100
0
1
2
3
4
5
6
7
8
9
10
Transient thermal impedance, Diode, Inverter
Zth = f(t)
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
1
0.1
100
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
Datasheet
9
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
6 Circuit diagram
6
Circuit diagram
J
Figure 1
Datasheet
10
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
7 Package outlines
7
Package outlines
Infineon
Figure 2
Datasheet
11
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
8 Module label code
8
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
12
Revision 1.00
2022-06-27
FS75R17W2E4P_B11
™
EasyPACK module
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
0.20
1.00
2021-09-21
2022-04-12
2022-06-27
Initial version
Preliminary datasheet
Final datasheet
Datasheet
13
Revision 1.00
2022-06-27
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-06-27
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
a written document signed by
©
2022 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-ABB291-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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