FZ1600R33HE4 [INFINEON]

200% PC;


型号：	FZ1600R33HE4
厂家：	Infineon
描述：	200% PC PC
文件：	总14页 (文件大小：947K)
中文：	中文翻译
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FZ1600R33HE4

IHM-B module

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features

• Electrical features

- V_CES= 3300 V

- I_{C nom}= 1600 A / I_CRM= 3200 A

- High DC stability

- High short-circuit capability

- Low switching losses

- Low V_CE,sat

- T_vj,op= 150°C

- Trench IGBT 4

- Unbeatable robustness

- V_CE,satwith positive temperature coeﬀicient

- High current density

- Low Q_gand C_res

• Mechanical features

- AlSiC base plate for increased thermal cycling capability

- High power density

- Isolated base plate

- Package with CTI > 600

- RoHS compliant

Potential applications

• High-power converters

• Medium-voltage converters

• Motor drives

• Traction drives

• UPS systems

• Active frontend (energy recovery)

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

6.0

Unit

Isolation test voltage

V_ISOL

V_isol

RMS, f = 50 Hz, t = 60 s

Partial discharge

extinction voltage

RMS, f = 50 Hz, Q_PD≤ 10 pC

2.6

DC stability

V_CE(D)T_vj= 25 °C, 100 Fit

2100

AlSiC

Material of module

baseplate

Creepage distance

Clearance

d_Creepterminal to heatsink

d_Clearterminal to heatsink

CTI

32.2

19.1

Comparative tracking

index

> 600

Table 2

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Stray inductance module

L_sCE

Module lead resistance,

terminals - chip

R_AA'+CC'T_C= 25 °C, per switch

0.12

mΩ

Module lead resistance,

terminals - chip

R_CC'+EE'T_C= 25 °C, per switch

0.14

mΩ

Storage temperature

T_stg

-40

150

°C

Mounting torque for

module mounting

- Mounting according to M6, Screw

valid application note

4.25

5.75

Terminal connection

torque

- Mounting according to M4, Screw

1.8

2.1

valid application note

M8, Screw

Weight

800

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

Parameter

Values

3300

Unit

Collector-emitter voltage

T_vj= -40 °C

T_vj= 150 °C

T_C= 100 °C

3300

Continuous DC collector

current

I_CDC

I_CRM

T_{vj max}= 150 °C

1600

Repetitive peak collector

current

t_plimited by T_{vj op}

3200

(table continues...)

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

Parameter

Values

Unit

Gate-emitter peak voltage

V_GES

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

2.40

2.95

3.10

5.80

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_{CE sat}I_C= 1600 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

2.65

3.25

6.40

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 62 mA, V_CE= V_GE, T_vj= 25 °C

5.20

V_GE= 15 V, V_CC= 1800 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

0.75

187

f = 1000 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

Reverse transfer

capacitance

C_res

5.33

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 3300 V, V_GE= 0 V

T_vj= 25 °C

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

400

Turn-on delay time

(inductive load)

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.8 Ω

0.600

0.710

0.760

0.220

0.240

0.250

3.420

3.670

3.740

0.690

1.290

1.470

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.8 Ω

µs

T_vj= 125 °C

T_vj= 150 °C

Turn-oﬀ delay time

(inductive load)

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 3.9 Ω

T_vj= 125 °C

T_vj= 150 °C

Fall time (inductive load)

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

V_GE= 15 V, R_Goﬀ= 3.9 Ω

T_vj= 125 °C

T_vj= 150 °C

Turn-on time (resistive

load)

t_{on_R}

E_on

I_C= 500 A, V_CC= 2000 V, T_vj= 25 °C

V_GE= 15 V, R_Gon= 0.8 Ω

1.18

µs

Turn-on energy loss per

pulse

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

1850

2850

3200

L = 85 nH, V_GE= 15 V,

T_vj= 125 °C

R_Gon= 0.8 Ω, di/dt =

T_vj= 150 °C

5300 A/µs (T_vj= 150 °C)

(table continues...)

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

3 Diode, Inverter

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Turn-oﬀ energy loss per

E_oﬀ

I_C= 1600 A, V_CC= 1800 V, T_vj= 25 °C

2280

2980

3140

6400

pulse

L = 85 nH, V_GE= 15 V,

T_vj= 125 °C

R_Goﬀ= 3.9 Ω, dv/dt =

T_vj= 150 °C

1700 V/µs (T_vj= 150 °C)

SC data

I_SC

V_GE≤ 15 V, V_CC= 2400 V, t_P≤ 10 µs,

V_CEmax=V_CES-L_sCE*di/dt

T_vj≤ 150 °C

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per IGBT

9.30 K/kW

K/kW

Thermal resistance, case to

heat sink

per IGBT

5.60

Temperature under

switching conditions

-40

150

°C

Diode, Inverter

Table 5

Maximum rated values

Symbol Note or test condition

V_RRM

Parameter

Values

3300

Unit

Repetitive peak reverse

voltage

T_vj= -40 °C

T_vj= 150 °C

3300

Continuous DC forward

current

I_F

I_FRM

I²t

1600

Repetitive peak forward

current

I²t - value

t_P= 1 ms

3200

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 150 °C

630

570

kA²s

Maximum power

dissipation

P_RQM

3600

µs

Minimum turn-on time

t_onmin

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

2.90

Unit

Min.

Max.

Forward voltage

V_F

I_F= 1600 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

3.30

2.60

2.50

2.80

(table continues...)

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

3 Diode, Inverter

Table 6

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1470

1650

1700

685

Unit

Min.

Max.

Peak reverse recovery

current

I_RM

V_CC= 1800 V, I_F= 1600 A, T_vj= 25 °C

V_GE= -15 V, -di_F/dt =

T_vj= 125 °C

5300 A/µs (T_vj= 150 °C)

T_vj= 150 °C

Recovered charge

Q_r

V_CC= 1800 V, I_F= 1600 A, T_vj= 25 °C

µC

V_GE= -15 V, -di_F/dt =

5300 A/µs (T_vj= 150 °C)

T_vj= 125 °C

1360

2000

730

T_vj= 150 °C

Reverse recovery energy

E_rec

V_CC= 1800 V, I_F= 1600 A, T_vj= 25 °C

V_GE= -15 V, -di_F/dt =

5300 A/µs (T_vj= 150 °C)

T_vj= 125 °C

1450

1750

T_vj= 150 °C

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per diode

17.5 K/kW

K/kW

Thermal resistance, case to

heat sink

per diode

8.50

Temperature under

switching conditions

-40

150

°C

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

4 Characteristics diagrams

Characteristics diagrams

Output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

V_GE= 15 V

Output characteristic field (typical), IGBT, Inverter

I_C= f(V_CE

T_vj= 150 °C

)

3200

2800

2400

2000

1600

1200

800

2800

2400

2000

1600

1200

800

400

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

V_CE= 20 V

Switching losses (typical), IGBT, Inverter

E = f(I_C)

)

R_Goﬀ= 3.9 Ω, R_Gon= 0.8 Ω, V_CC= 1800 V, V_GE

= 15 V

3200

10000

9000

8000

7000

6000

5000

4000

3000

2000

1000

2800

2400

2000

1600

1200

800

400

400 800 1200 1600 2000 2400 2800 3200

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

4 Characteristics diagrams

Switching losses (typical), IGBT, Inverter

Switching times (typical), IGBT, Inverter

E = f(R_G)

t = f(I_C)

I_C= 1600 A, V_CC= 1800 V, V_GE

15 V

R_Goﬀ= 3.9 Ω, R_Gon= 0.8 Ω, V_CC= 1800 V, V_GE

125 °C

= 15 V, T_vj=

10000

9000

8000

7000

6000

5000

4000

3000

2000

1000

0.1

0.01

400 800 1200 1600 2000 2400 2800 3200

Switching times (typical), IGBT, Inverter

Transient thermal impedance , IGBT, Inverter

t = f(R_G)

Z_th= f(t)

I_C= 1600 A, V_CC= 1800 V, V_GE

= 15 V, T_vj= 125 °C

100

0.1

0.001

0.01

0.1

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

4 Characteristics diagrams

Reverse bias safe operating area (RBSOA), IGBT,

Inverter

Capacity characteristic (typical), IGBT, Inverter

C = f(V_CE

f = 100 kHz, V_GE= 0 V, T_vj= 25 °C

)

I_C= f(V_CE

)

R_Goﬀ= 3.9 Ω, V_GE= 15 V, T_vj= 150 °C

4000

300

3600

3200

2800

2400

2000

1600

1200

800

250

200

150

100

400

500 1000 1500 2000 2500 3000 3500

0.1

100

Gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

Forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

I_C= 1600 A, T_vj= 25 °C

3200

2800

2400

2000

1600

1200

800

-1

-3

-5

-7

-9

-11

-13

-15

400

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

4 Characteristics diagrams

Switching losses (typical), Diode, Inverter

E_rec= f(I_F)

Switching losses (typical), Diode, Inverter

E_rec= f(R_G)

V_CE= 1800 V, R_Gon= R_Gon(IGBT)

V_CE= 1800 V, I_F= 1600 A

2500

2000

1500

1000

500

2500

2000

1500

1000

500

400 800 1200 1600 2000 2400 2800 3200

Transient thermal impedance, Diode, Inverter

Safe operating area (SOA), Diode, Inverter

Z_th= f(t)

I_R= f(V_R)

T_vj= 150 °C

100

3600

3200

2800

2400

2000

1600

1200

800

400

0.1

0.001

500 1000 1500 2000 2500 3000 3500

0.01

0.1

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

5 Circuit diagram

Circuit diagram

Figure 1

Package outlines

Figure 2

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

7 Module label code

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

Example

71549142846550549911530

Figure 3

Datasheet

Revision 1.30

2022-11-22

FZ1600R33HE4

IHM-B module

Revision history

Document revision

Date of release Description of changes

1.00

1.10

1.20

1.30

2021-03-02

2021-04-13

2021-10-28

2022-11-22

Final

Final datasheet

Datasheet

Revision 1.30

2022-11-22

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-11-22

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-AAO543-004

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

FZ1600R33HE4 [INFINEON]

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