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FZ1800R17KE3B2NOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 2850A I(C), 1700V V(BR)CES, N-Channel, MODULE-9;

FZ1800R17KE3B2NOSA1


元器件型号：	FZ1800R17KE3B2NOSA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 2850A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 局域网栅
PDF文件：	总8页 (文件大小：406K)
下载文档：	下载PDF数据表文档文件
型号参数：FZ1800R17KE3B2NOSA1参数

FZ1800R17KF6CB2V

IGBT Module

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48 ETC

FZ18R12K4

IGBT Module

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13 ETC

FZ18R16K4

IGBT Module

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12 ETC

FZ1A100KC

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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20 DBLECTRO

FZ1A100KR

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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7 DBLECTRO

FZ1A100KT

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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9 DBLECTRO

FZ1A100LC

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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11 DBLECTRO

FZ1A100LR

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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10 DBLECTRO

FZ1A100LT

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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10 DBLECTRO

FZ1A100MC

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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6 DBLECTRO

FZ1A100MR

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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3 DBLECTRO

FZ1A100MT

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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3 DBLECTRO

FZ1A101KC

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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4 DBLECTRO

FZ1A101KR

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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-

2 DBLECTRO

FZ1A101KT

CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE

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2 DBLECTRO

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