FZ2400R17HE4B9NPSA1 [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | FZ2400R17HE4B9NPSA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总9页 (文件大小：892K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
IHM-Bꢀ模块
IHM-Bꢀmodule
初步数据ꢀ/ꢀPreliminaryꢀData
VCES = 1700V
IC nom = 2400A / ICRM = 4800A
典型应用
TypicalꢀApplications
• HighꢀPowerꢀConverters
• MotorꢀDrives
• 大功率变流器
• 电机传动
电气特性
ElectricalꢀFeatures
• 提高工作结温ꢀTvjꢀop
• 低开关损耗
• 低ꢀꢀVCEsat
• ExtendedꢀOperationꢀTemperatureꢀTvjꢀop
• LowꢀSwitchingꢀLosses
• LowꢀVCEsat
• Tvjꢀopꢀ=ꢀ150°C
• Tvjꢀopꢀ=ꢀ150°C
机械特性
MechanicalꢀFeatures
• 4ꢀkVꢀ交流ꢀꢀꢀ1分钟ꢀꢀꢀ绝缘
• 封装的ꢀCTIꢀ>ꢀ400
• 高爬电距离和电气间隙
• 高功率密度
• 4ꢀkVꢀACꢀ1minꢀInsulation
• PackageꢀwithꢀCTIꢀ>ꢀ400
• HighꢀCreepageꢀandꢀClearanceꢀDistances
• HighꢀPowerꢀDensity
• IHMꢀBꢀ封装
• IHMꢀBꢀHousing
• 铜基板
• CopperꢀBaseꢀPlate
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
ꢀDigit
ꢀꢀ1ꢀ-ꢀꢀꢀ5
ꢀꢀ6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
DMXꢀ-ꢀCode
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
IC nom
ICRM
Ptot
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1700
2400
4800
15,5
ꢀ
ꢀ
ꢀ
V
A
A
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 100°C, Tvj max = 175°C
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ kW
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 2400 A, VGE = 15 V
IC = 2400 A, VGE = 15 V
IC = 2400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,95 2,30
2,35
2,45
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 96,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,2
5,8
25,0
0,65
195
6,30
ꢀ
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 2400 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,46
0,50
0,53
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 2400 A, VCE = 900 V
VGE = ±15 V
RGon = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,21
0,22
0,23
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 2400 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,40
1,55
1,60
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 2400 A, VCE = 900 V
VGE = ±15 V
RGoff = 0,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,16
0,41
0,50
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 2400 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, di/dt = 11500 A/µs (Tvj = 150°C)Tvj = 125°C
RGon = 0,8 Ω
Tvj = 25°C
510
620
650
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 2400 A, VCE = 900 V, LS = 50 nH
VGE = ±15 V, du/dt = 2500 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 0,8 Ω
Tvj = 25°C
630
920
1000
mJ
mJ
mJ
ꢀ
ꢀ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
ꢀ
tP ≤ 10 µs, Tvj = 150°C
11000
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
9,70 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
6,50
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1700
2400
4800
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
1000
940
kA²s
kA²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 2400 A, VGE = 0 V
IF = 2400 A, VGE = 0 V
IF = 2400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,80 2,20
1,90
1,95
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 2400 A, - diF/dt = 11500 A/µs (Tvj=150°C)Tvj = 25°C
VR = 900 V
VGE = -15 V
1950
A
A
A
Tvj = 125°C
Tvj = 150°C
ꢀ
ꢀ
ꢀ
2450
2600
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 2400 A, - diF/dt = 11500 A/µs (Tvj=150°C)Tvj = 25°C
VR = 900 V
VGE = -15 V
530
960
1100
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 2400 A, - diF/dt = 11500 A/µs (Tvj=150°C)Tvj = 25°C
VR = 900 V
VGE = -15 V
330
660
790
mJ
mJ
mJ
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
7,10
ꢀ
16,5 K/kW
K/kW
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个二极管ꢀ/ꢀperꢀdiode
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
150
°C
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
4,0
Cu
ꢀ kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al2O3
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
32,2
32,2
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
19,1
19,1
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 400
ꢀ
ꢀ
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
LsCE
RCC'+EE'
Tstg
ꢀ
ꢀ
6,0
ꢀ
ꢀ
nH
mΩ
°C
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
0,10
储存温度
Storageꢀtemperature
ꢀ
-40
4,25
ꢀ
150
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
-
5,75 Nm
2,1 Nm
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM4ꢀ根据相应的应用手册进行安装
ScrewꢀM4ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
螺丝ꢀM8ꢀ根据相应的应用手册进行安装
1,8
8,0
-
-
M
G
10
Nm
g
ScrewꢀM8ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
重量
Weight
ꢀ
ꢀ
1900
ꢀ
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
Tvjꢀ=ꢀ150°C
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
400
400
0
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ0.8ꢀΩ,ꢀRGoffꢀ=ꢀ0.8ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
2500
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
2000
1500
1000
500
0
400
0
5
6
7
8
9
10
11
12
13
0
800
1600
2400
IC [A]
3200
4000
4800
VGE [V]
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ2400ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
6000
100
Eon, Tvj = 125°C
ZthJC : IGBT
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
10
1
i:
ri[K/kW]: 0,7537 7,6137 0,9876 0,358
τi[s]: 0,00156 0,0402 0,2618 3,8551
1
2
3
4
0
0,1
0,001
0,0
1,0
2,0
3,0
4,0
RG [Ω]
5,0
6,0
7,0
8,0
0,01
0,1
t [s]
1
10
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ0.8ꢀΩ,ꢀTvjꢀ=ꢀ150°C
5600
4800
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
4800
4000
3200
2400
1600
800
400
0
0
0
200 400 600 800 1000 1200 1400 1600 1800
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
VCE [V]
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ0.8ꢀΩ,ꢀVCEꢀ=ꢀ900ꢀV
IFꢀ=ꢀ2400ꢀA,ꢀVCEꢀ=ꢀ900ꢀV
1200
1000
Erec, Tvj = 125°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 150°C
1100
900
1000
900
800
700
600
500
400
300
200
800
700
600
500
400
300
200
100
0
600 1200 1800 2400 3000 3600 4200 4800
IF [A]
0,0
1,0
2,0
3,0
4,0
RG [Ω]
5,0
6,0
7,0
8,0
瞬态热阻抗ꢀ二极管,逆变器ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
ZthJCꢀ=ꢀfꢀ(t)
100
ZthJC : Diode
10
1
i:
ri[K/kW]: 1,0804 1,568 12,3563 1,2267
τi[s]: 0,0006 0,0045 0,0386 0,5509
1
2
3
4
0,1
0,001
0,01
0,1
t [s]
1
10
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FZ2400R17HE4_B9
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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preparedꢀby:ꢀWB
approvedꢀby:ꢀPL
dateꢀofꢀpublication:ꢀ2013-11-11
revision:ꢀ2.4
9
相关型号：
FZ2400R17HE4PB9HPSA1
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9
INFINEON
FZ2400R17HP4B29BOSA1
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9
INFINEON
FZ2400R17HP4HOSA2
Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
INFINEON
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