GA400TD60U [INFINEON]
HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT; 半桥双IGBT INT -A- PAK超FastTM高速IGBT
| 型号： | GA400TD60U |
| 厂家： | 
Infineon |
| 描述： | HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT |
| 文件： | 总10页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 50059D
GA400TD60U
TM
Ultra-Fast Speed IGBT
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
VCES = 600V
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCE(on) typ. = 1.70V
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
@V = 15V, IC = 400A
GE
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Pulsed Collector Current
400
ICM
800
A
ILM
Peak Switching Current
800
IFM
Peak Diode Forward Current
Gate-to-Emitter Voltage
800
VGE
±20
2500
1250
650
V
VISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
PD @ TC = 25°C
W
PD @ TC = 85°C
TJ
-40 to +150
-40 to +125
°C
TSTG
Thermal / Mechanical Characteristics
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Typ.
—
Max.
0.10
0.20
—
Units
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
—
°C/W
0.1
—
.
6.0
N m
—
5.0
400
—
g
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1
05/15/02
GA400TD60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 1mA
V(BR)CES
VCE(on)
Collector-to-Emitter Breakdown Voltage 600
—
—
Collector-to-Emitter Voltage
Gate Threshold Voltage
—
—
3.0
—
—
—
—
—
—
—
1.7 2.4
VGE = 15V, IC = 400A
VGE = 15V, IC = 400A, TJ = 125°C
IC = 2.5mA
1.8
—
—
6.0
—
V
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
481
—
mV/°C VCE = VGE, IC = 2.5mA
gfe
Forward Transconductance
—
S
VCE = 25V, IC = 400A
ICES
Collector-to-Emitter Leaking Current
2.0
20
—
mA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 400A, VGE = 0V
—
VFM
IGES
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
3.7
3.6
—
V
—
IF = 400A, VGE = 0V, TJ = 125°C
VGE = ±20V
500
nA
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1806 2709
251 376
612 918
VCC = 400V
Qge
Qgc
td(on)
tr
nC IC = 270A ,VGE = 15V
TJ = 25°C
1033
335
688
225
26
—
—
—
—
—
—
89
—
—
—
—
—
—
—
RG1 = 15Ω, RG2 = 0Ω,
Rise Time
ns
IC = 400A
td(off)
tf
Turn-Off Delay Time
VCC = 360V
VGE = ±15V
Fall Time
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
mJ
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
48
74
40136
2509
522
232
141
16292
1641
VGE = 0V
VCC = 30V
ƒ = 1 MHz
IC = 400A
RG1 = 15Ω
Output Capacitance
pF
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
ns
A
Irr
Qrr
nC RG2 = 0Ω
di(rec)M/dt
A/µs VCC = 360V
di/dt=1300A/µs
2
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GA400TD60U
250
200
150
100
50
For both:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
175
Power Dissipation =
W
Sq uare wave:
60% of rated
voltage
I
Ideal diodes
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
°
T = 25 C
J
°
T = 125 C
J
°
T = 125 C
J
100
10
1
100
°
T = 25 C
J
V
= 15V
V
= 25V
CE
GE
80µs PULSE WIDTH
80µs PULSE WIDTH
10
1.0
1.5
2.0
2.5 3.0
5.0
6.0
7.0
8.0 9.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA400TD60U
500
400
300
200
100
0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
=800A
C
I
I
=400A
=200A
C
C
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
C
°
, Junction Temperature ( C)
T
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
0.1
D = 0.50
0.20
0.10
P
DM
0.01
0.05
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
DM
thJC
C
A
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA400TD60U
20
16
12
8
80000
60000
40000
20000
0
V
I
= 400V
= 270A
V
C
= 0V,
f = 1MHz
C SHORTED
ce
CC
C
GE
= C + C
ies
ge
gc
ce
gc ,
C
= C
= C + C
res
C
oes
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
400
800
1200
1600
2000
V
, Collector-to-Emitter Voltage (V)
CE
Q
G
, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
120
100
80
1000
100
10
V
V
= 360V
= 15V
= 125 C
R
=15Ω;R = 0 Ω
= 15V
= 360V
CC
GE
G1 G2
V
GE
°
T
J
C
V
CC
I
= 400A
I
I
= 800A
C
=
=
A
A
400
200
C
60
I
C
40
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (Ω)
°
T , Junction Temperature ( C )
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
GA400TD60U
1000
800
600
400
200
0
200
VG E = 20V
T J = 125°C
VCE measured at terminal (Peak Voltage)
R
=15Ω;RG2 = 0 Ω
G1
°
T
V
= 125 C
J
CC
= 360V
= 15V
V
GE
160
120
80
40
0
SAFE OPERATING AREA
A
0
200
400
600
800
0
200
400
600
800
I
, Collector-to-emitter Current (A)
C
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Reverse Bias SOA
Collector-to-Emitter Current
1000
30000
20000
10000
0
I
I
I
= 800A
= 400A
= 200A
F
F
F
100
T
= 125°C
= 25°C
J
T
J
VR = 360V
TJ = 125°C
TJ = 25°C
10
0.0
2.0
4.0
6.0
500
1000
1500
2000
Forward Voltage Drop - V
(V)
FM
di /dt - (A/µs)
f
Fig. 14 - Typical Stored Charge vs. dif/dt
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
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GA400TD60U
250
200
150
100
50
400
300
200
100
0
I
I
I
= 800A
= 400A
= 200A
F
F
F
I
I
I
= 800A
= 400A
= 200A
F
F
F
VR = 360V
TJ = 125°C
TJ = 25°C
VR = 36 0 V
TJ = 12 5 °C
TJ = 25 °C
0
500
1000
1500
2000
500
1000
1500
2000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
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GA400TD60U
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff =
Vce Ic dt
∫
t1
Fig. 17a - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
E on = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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GA400TD60U
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 17e. Macro Waveforms for Figure 18a's Test Circuit
480V
RL=
L
D.U.T.
4 X IC @25°C
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 19. Pulsed Collector Current
Test Circuit
Figure 18. Clamped Inductive Load Test Circuit
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9
GA400TD60U
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
See fig. 17
For screws M6.
Pulse width 50µs; single shot.
Case Outline — DUAL INT-A-PAK
107.30 4.224
NOTES :
106.30 4.185
[ ]
1. ALL DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: MILLIMETER.
93.30 3.673
92.70 3.650
[ ]
3X M6
8
[.314]
MAX.
28.60 1.126
2X
27.40
[
1.079
]
6.60 .260
4X
5.40 .213
[ ]
6
7
11
10
48.30 1.902
47.70 1.878
[ ]
2
3
1
8
9
5
4
15.59 .614
2X
14.39 .567
[ ]
4X FASTON TAB (110)
2.8 x 0.5 [.110 x .020]
6.80 .267
48.50 1.909
8.00 .315
4X Ø 6.20
[ ]
.244
47.50 1.870
6.60 .260
[ ]
[ ]
31.00 1.220
29.60 1.165
[ ]
5.50 .217
4.50 .177
[ ]
24.00 .945
23.00
[ ]
.906
59.50 2.343
58.50
[ ]
2.303
0.15 [.0059] CONVEX
104.50 4.114
62.70 2.468
61.70 2.429
[ ]
103.50
[ ]
4.075
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
10
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