GA75TS60U [INFINEON]
HALF-BRIDGE IGBT INT-A-PAK; 半桥IGBT INT -A- PAK
| 型号： | GA75TS60U |
| 厂家： | 
Infineon |
| 描述： | HALF-BRIDGE IGBT INT-A-PAK |
| 文件： | 总10页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -50050D
GA75TS60U
TM
Ultra-Fast Speed IGBT
"HALF-BRIDGE" IGBT INT-A-PAK
Features
VCES = 600V
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCE(on) typ. = 1.7V
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
@V = 15V, IC = 75A
GE
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
75
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Pulsed Collector Current•
ICM
150
150
150
±20
2500
285
150
A
ILM
Peak Switching Current‚
IFM
Peak Diode Forward Current
Gate-to-Emitter Voltage
VGE
V
VISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
PD @ TC = 25°C
W
PD @ TC = 85°C
TJ
-40 to +150
-40 to +125
°C
TSTG
Thermal / Mechanical Characteristics
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Typ.
—
Max.
0.44
0.70
—
Units
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
—
°C/W
0.1
—
.
6.0
N m
—
5.0
200
—
g
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1
05/20/02
GA75TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 1mA
V(BR)CES
VCE(on)
Collector-to-Emitter Breakdown Voltage 600
—
—
Collector-to-Emitter Voltage
Gate Threshold Voltage
—
—
3.0
—
—
—
—
—
—
—
1.7 2.2
VGE = 15V, IC = 75A
VGE = 15V, IC = 75A, TJ = 125°C
IC = 0.5mA
1.76
—
—
6.0
—
V
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
83
mV/°C VCE = VGE, IC = 500µA
gfe
Forward Transconductance „
—
S
VCE = 25V, IC = 75A
ICES
Collector-to-Emitter Leaking Current
—
1.0
10
—
mA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 75A, VGE = 0V
—
VFM
IGES
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
3.3
3.1
—
V
—
IF = 75A, VGE = 0V, TJ = 125°C
VGE = ±20V
250
nA
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
340 510
48 72
120 170
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VCC = 400V, VGE = 15V
Qge
Qgc
td(on)
tr
nC IC = 75A
TJ = 25°C
110
94
—
—
—
—
—
—
RG1 = 27Ω, RG2 = 0Ω,
IC = 75A
Rise Time
ns
td(off)
tf
Turn-Off Delay Time
250
180
1.95
4.4
VCC = 360V
Fall Time
VGE = ±15V
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
mJ
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
6.35 12.6
7880
770
98
—
—
—
—
—
—
—
VGE = 0V
VCC = 30V
ƒ = 1 MHz
IC = 75A
Output Capacitance
pF
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
133
94
ns
A
Irr
RG1 = 27Ω
Qrr
6274
2061
nC RG2 = 0Ω
di(rec)M/dt
A/µs VCC = 360V
di/dt =1300A/µs
2
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GA75TS60U
70
60
50
40
30
20
10
0
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Power Dissipation = 65 W
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
T = 125oC
J
100
T = 25oC
J
25o
T = 1C
J
10
T = 25oC
J
V
= 25V
V
= 15V
GE
20µs PULSE WIDTH
CE
80µs PULSE WIDTH
10
1.0
1
5.0
1.5
2.0 2.5
6.0
7.0
8.0 9.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA75TS60U
80
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
60
40
20
0
I
=150A
= 75 A
C
I
I
C
C
37.5A
=
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
T , Junction Temperature (°C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.5 0
0.2 0
0.10
0.05
0.0 2
0.01
P
DM
0.1
t
S ingle P ulse
1
t
(Th erm al Resistance)
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
DM
+ T
thJC
J
C
0.01
0. 0001
0. 001
0. 01
0.1
1
1 0
1 0 0
1 0 0 0
t 1
, Rectangular Pulse Duration (Seconds)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA75TS60U
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
GE
V
I
= 400V
= 75A
CC
C
C
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
oes
res
4
0
1
10
100
0
100
200
300
400
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
9
100
10
1
V
V
= 360V
R
=27Ω;R = 0 Ω
= 15V
= 360V
CC
GE
G1 G2
= 15V
V
GE
125°C
=
T
J
V
CC
I
= 75A
C
I
=
=
A
A
150
75
C
8
I
I
C
7
=37.5A
C
6
5
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
RG1 , Gate Resistance ( Ω )
°
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
GA75TS60U
25
200
160
120
80
R
= 27Ω;RG2 = 0 Ω
G1
V G E = 20V
°
T
= 125 C
J
T J = 125°C
V
V
= 360V
= 15V
GE
CC
V C E measured at terminal (Peak Voltage)
20
15
10
5
SAFE OPERATING AREA
40
0
A
0
0
40
80
120
160
200
240
0
100
200
300
400
500
600
700
I
, Collector-to-emitter Current (A)
C
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Reverse Bias SOA
Collector-to-Emitter Current
1000
12000
10000
8000
6000
4000
2000
0
I
I
I
= 150A
= 75A
= 38A
F
F
F
100
T
T
= 125°C
= 25°C
J
J
VR = 360V
TJ = 125°C
TJ = 25°C
10
1.0
2.0
3.0
4.0
5.0
500
1000
1500
2000
Forward Voltage D rop - V
(V)
di /dt - (A/µs)
FM
f
Fig. 14 - Typical Stored Charge vs. dif/dt
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
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GA75TS60U
200
160
120
80
140
120
100
80
I
I
= 150A
= 75A
= 38A
F
F
F
I
= 150A
F
F
F
I
I
I
= 75A
= 38A
60
40
20
VR = 360V
TJ = 125°C
TJ = 25°C
VR = 360V
TJ = 125°C
TJ = 25°C
40
500
0
1000
1500
2000
500
1000
1500
2000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
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GA75TS60U
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff =
Vce Ic dt
∫
t1
Fig. 17 - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
d(off), tf
t
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t4
∫
Erec =
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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GA75TS60U
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure21. MacroWaveformsforFigure17'sTestCircuit
480V
RL=
4 X IC @25°C
0 - 480V
Figure22.PulsedCollectorCurrent
TestCircuit
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9
GA75TS60U
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
ꢀ
See fig. 17
For screws M6.
For screws M5.
Pulse width 50µs; single shot.
Case Outline — INT-A-PAK
94.70 3.728
93.70 3.689
NOTES :
[
]
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONTROLLING DIMENSION: MILLIMETER.
80.30 3.161
79.70 3.138
[ ]
23.50 .925
2X
4.50 .177
3.50 .138
22.50
[ ]
.886
[
]
11
10
6
7
34.70 1.366
17.50 .689
16.50 .650
33.70 1.327
[ ]
[ ]
1
2
3
8
9
5
4
6.80
2X Ø 6.20
.267
.244
[
]
3X M5
[.314]
MAX.
4X FAST ON TAB (110)
2.8 x 0.5 [.110 x .020]
8.00 .315
8
42.00 1.654
6.60 .260
[ ]
41.00 1.614
[ ]
30.50 1.201
29.00 1.142
[ ]
24.00 .945
23.00 .906
[ ]
13.30 .524
8.65 .341
7.65 .301
2X
0.15 [.0059] CONVEX
92.10 3.626
12.70
[ ]
.500
[ ]
32.00 1.260
31.00 1.220
[ ]
91.10 3.587
[ ]
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
10
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