GB25RF120K [INFINEON]
IGBT PIM MODULE; IGBT PIM模块
| 型号： | GB25RF120K |
| 厂家： | 
Infineon |
| 描述： | IGBT PIM MODULE |
| 文件： | 总13页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94552
GB25RF120K
IGBT PIM MODULE
VCES = 1200V
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
IC = 25A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.40V
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
ECONO2 PIM
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed
Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter
Symbol
VCES
VGES
IC
Test Conditions
Ratings
1200
20
Units
Inverter Collector-to-Emitter Voltage
V
Gate-to-Emitter Voltage
Collector Current
Continuous
25°C / 80°C
25°C
40 / 25
80
ICM
A
IFM
Diode Maximum Forward Current
Power Dissipation
25°C
80
PD
1 device
25°C
198
W
V
Input
Repetitive Peak Reverse Voltage
VRRM
IF(AV)
IFSM
I2t
1600
20
Rectifier Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
50/60Hz sine pulse
80°C
A
Rated VRRM applied, 10ms,
sine pulse
250
A2s
V
316
Brake
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
VCES
VGES
IC
1200
20
Continuous
25°C / 80°C
25°C
25 / 15
50
A
ICM
PD
Power Dissipation
1 device
25°C
104
1200
W
V
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
VRRM
TJ
—
—
—
—
150
°C
TSTG
-40 to +125
Isolation Voltage
VISOL
AC(1min.)
2500
V
Thermal and Mechanical Characteristics
Parameter
Symbol
Min
—
Typical
Maximum
0.63
1.0
Units
°C/W
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Brake Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
—
—
—
—
—
—
—
RTHJC
—
1.2
—
2.3
—
0.85
3.3
2.7
Nm
1
www.irf.com
10/17/02
GB25RF120K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 500µA
BVCES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Inverter
IGBT
1200
—
—
—
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V/°C
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1mA (25°C-125°C)
IC = 25A, VGE = 15V
1.0
—
1,2
4,5
2.40 2.70
2.95 3.30
IC = 40A, VGE = 15V
IC = 25A, VGE = 15V, TJ = 125°C
IC = 40A, VGE = 15V, TJ = 125°C
2.85
3.55
5.0
-10
11
—
—
VGE(th)
∆VGE(th)
ICES
VCE = VGE, IC = 250µA
Gate Threshold Voltage
6.0
—
3,4,5
VCE = VGE, IC = 1mA (25°C-125°C)
Threshold Voltage temp. coefficient
Zero Gate Voltage Collector Current
mV/°C
µA
V
GE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 125°C
VGE 20V
IC = 25A
CC = 400V
100
—
750
—
IGES
Qg
=
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
200
nA
nC
7
175
17.5
81
265
30
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
V
CT1
VGE = 15V
125
IC = 25A, VCC = 600V
VGE = 15V, RG = 10Ω, L = 400µH
TJ = 25°C
2450 4450
2050 3200
4500 7650
3350 5650
2850 3850
6200 9500
CT4
µJ
µJ
ns
IC = 25A, VCC = 600V
9,11
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Ω
VGE = 15V, RG = 10 , L = 400µH
TJ = 125°C
WF1,2
10,12
CT4
IC = 25A, VCC = 600V
VGE = 15V, RG = 10Ω, L = 400µH
TJ = 125°C
Turn-On delay time
80
50
104
70
Rise time
td(off)
tf
Turn-Off delay time
510 1000
WF1
WF2
Fall time
230
2370
455
60
299
—
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
VCC = 30V
6
Output Capacitance
—
pF
µs
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
f = 1.0Mhz
TJ = 150°C, IC = 80A
CT2
FULL SQUARE
Ω
RG = 10 , VGE = +15V to 0V
TJ = 150°C
CT3
VCC = 900V, VP = 1200V
SCSOA
Irr
Short Circuit Safe Operating Area
Diode Peak Reverse Recovery Current
Diode Forward Voltage Drop
10
—
—
35
—
—
WF4
RG = 10Ω, VGE = +15V to 0V
TJ = 125°C
13,14,15
CT4
Inverter
FRED
VCC = 600V, IF = 25A, L = 400µH
A
V
Ω
VGE = 15V, RG = 10
IF = 25A
—
—
—
—
1.90 2.35
2.25 2.80
VFM
IF = 40A
8
IF = 25A, TJ = 125°C
IF = 40A, TJ = 125°C
2.00
2.45
—
—
2
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GB25RF120K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VFM
IRM
IF = 25A
V
mA
17
Input
Maximum Forward Voltage Drop
—
—
—
—
—
1200
—
—
—
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
1.5
0.1
1.0
10.4
0.85
—
TJ = 25°C, VR = 1600V
TJ = 150°C, VR = 1600V
TJ = 150°C
Rectifier
Maximum Reverse Leakage Current
Ω
m
rT
Forward Slope Resistance
VF(TO)
Conduction Threshold Voltage
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
V
BVCES
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 500µA
Brake
IGBT
V
V/°C
V
VGE = 0V, IC = 1mA (25°C-125°C)
IC = 12.5A, VGE = 15V
—
20,21
23,24
2.30 2.50
3.00 3.25
IC = 25A, VGE = 15V
IC = 12.5A, VGE = 15V, TJ = 125°C
IC = 25A, VGE = 15V, TJ = 125°C
2.70
3.70
5.0
-10
8.0
370
—
—
—
VGE(th)
∆VGE(th)
ICES
V
CE = VGE, IC = 250µA
Gate Threshold Voltage
6.0
—
22,23,24
VCE = VGE, IC = 1mA (25°C-125°C)
Threshold Voltage temp. coefficient
Zero Gate Voltage Collector Current
mV/°C
µA
V
GE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 125°C
VGE 20V
IC = 12.5A
CC = 400V
50
—
IGES
Qg
=
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
200
145
70
nA
nC
26
96
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
V
46
CT1
VGE = 15V
10
15
IC = 12.5A, VCC = 600V
VGE = 15V, RG = 22Ω, L = 400µH
TJ = 25°C
1050 1200
750 1000
1800 2200
1350 1500
1100 1250
2450 2750
CT4
µJ
µJ
ns
IC = 12.5A, VCC = 600V
28,30
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Ω
GE = 15V, RG = 22 , L = 400µH
V
TJ = 125°C
WF3,4
29,31
CT4
IC = 12.5A, VCC = 600V
VGE = 15V, RG = 22Ω, L = 400µH
TJ = 125°C
Turn-On delay time
50
36
65
50
Rise time
td(off)
tf
Turn-Off delay time
350
210
2370
460
60
400
275
—
WF3
WF4
Fall time
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
VCC = 30V
25
Output Capacitance
—
pF
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
f = 1.0Mhz
TJ = 150°C, IC = 50A
CT2
CT3
FULL SQUARE
Ω
RG = 22 , VGE = +15V to 0V
TJ = 150°C
V
CC = 900V, VP = 1200V
RG = 22Ω, VGE = +15V to 0V
CC = 600V, IF = 12.5A, L = 400µH
SCSOA
Irr
Short Circuit Safe Operating Area
10
—
—
—
—
µs
A
V
32,33,34
CT4
Brake
Diode
Diode Peak Reverse Recovery Current
24
VGE = 15V, RG = 22Ω, TJ = 125°C
IF = 8.0A
—
—
—
—
1.90 2.10
2.40 2.65
V
VFM
IF = 16A
27
16
Diode Forward Voltage Drop
IF = 8.0A, TJ = 125°C
IF = 16A, TJ = 125°C
TJ = 25°C
2.00
2.65
—
—
NTC
R
B
Resistance
B Value
4538 5000 5495
468.6 493.3 518.0
3307 3375 3443
Ω
TJ = 100°C
TJ = 25 / 50 °C
K
Note:
For UL Applications, TJ is limited to +125°C. (See File E78996).
Power dependent on temperature. TJ not to exceed TJ max.
Energy losses include "tail" and diode reverse recovery.
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3
GB25RF120K
Inverter
50
45
50
45
40
35
30
25
20
15
10
5
V
= 18V
GE
V
= 18V
GE
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 2 - Typ. IGBT Output Characteristics
Fig. 1 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
TJ = 25°C; tp = 80µs
20
18
16
14
12
350
300
250
200
150
100
50
T
= 25°C
J
T
= 125°C
J
I
I
I
= 12.5A
= 25A
CE
CE
CE
10
8
= 50A
6
T
= 125°C
J
4
T
= 25°C
15
2
J
0
0
5
10
15
20
0
5
10
20
V
(V)
V
(V)
GE
GE
Fig. 4 - Typical VCE vs. VGE
Fig. 3 - Typ. Transfer Characteristics
TJ = 25°C
VCE = 50V; tp = 10µs
20
18
16
14
12
10
8
10000
1000
100
Cies
Coes
I
I
I
= 12.5A
= 25A
CE
CE
CE
= 50A
Cres
6
4
2
0
10
0
20
40
60
(V)
80
100
5
10
15
20
V
V
(V)
CE
GE
Fig.5 - Typical VCE vs. VGE
Fig. 6- Typ. Capacitance vs. VCE
TJ = 125°C
VGE= 0V; f = 1MHz
4
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GB25RF120K
Inverter
16
14
12
10
8
100
90
80
70
60
50
40
30
20
10
0
25°C
125°C
400V
600V
6
4
2
0
0
50
100
150
200
0.0
1.0
2.0
(V)
3.0
4.0
Q
, Total Gate Charge (nC)
V
G
F
Fig. 7 - Typical Gate Charge vs. VGE
Fig. 8 - Typ. Diode Forward Characteristics
ICE = 25A; L = 1mH
tp = 80µs
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1000
td
OFF
t
F
E
ON
100
td
ON
E
OFF
t
R
10
0
10
20
30
(A)
40
50
60
0
10
20
30
(A)
40
50
60
I
I
C
C
Fig. 10 - Typ. Switching Time vs. IC
Fig. 9 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 400µH; VCE = 600V,RG = 10Ω;VGE = 15V
TJ = 125°C; L=400µH; VCE= 600V,RG= 10Ω; VGE= 15V
6000
10000
5000
E
ON
td
4000
1000
100
10
OFF
E
OFF
3000
2000
1000
0
t
F
td
ON
t
R
0
10
20
30
40
50
0
10
20
30
40
50
R
( )
Ω
R
( )
Ω
G
G
Fig. 12 - Typ. Switching Time vs. RG
Fig. 11 - Typ. Energy Loss vs. RG
TJ = 125°C; L=400µH; VCE= 600V, ICE= 25A; VGE= 15V
5
TJ = 125°C; L=400µH; VCE= 600V, ICE= 25A; VGE= 15V
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GB25RF120K
Inverter
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
R
4.7 Ω
G =
R
10
22
Ω
Ω
G =
G =
R
R
47
Ω
G =
0
0
0
10
20
30
40
50
0
10
20
30
40
50
60
R
(
Ω)
I
(A)
G
F
Fig. 13 - Typical Diode IRR vs. IF
Fig. 14 - Typical Diode IRR vs. RG
TJ = 125°C
TJ = 125°C; IF = 25A
Thermistor
40
35
30
25
20
15
10
5
14
12
10
8
6
4
2
0
0
0
500
1000
1500
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
di /dt (A/µs)
T
F
J
Fig. 15 - Typical Diode IRR vs. diF / dt
VCC = 600V; VGE = 15V; IF = 25A; TJ = 125°C
Fig. 16 - Thermistor Resistance vs. Temperature
Input Rectifier
100
90
80
70
60
50
40
30
20
10
0
25°C
125°C
0.0
1.0
2.0
3.0
V
(V)
F
Fig. 17 - Typ. Diode Forward Characteristics
tp = 80µs
6
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GB25RF120K
Inverter
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.01
0.120
0.201
0.309
0.000439
0.009470
0.018320
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter IGBT)
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.05
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.140
0.257
0.602
0.000230
0.002752
0.036788
τ
1τ1
τ
2 τ2
3τ3
0.01
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter FRED)
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
45
40
35
30
25
20
15
10
5
tf
tr
TEST CURRENT
90% test current
90% ICE
5% VCE
5% ICE
10% test current
5% VCE
0
Eon Loss
Eoff Loss
-100
-5
-100
-10
-0.60 -0.10 0.40
0.90 1.40
9.40 9.60 9.80 10.00 10.20 10.40
Time(µs)
Time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
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7
GB25RF120K
Brake
50
45
50
45
40
35
30
25
20
15
10
5
V
= 18V
V
= 18V
GE
GE
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 21 - Typ. IGBT Output Characteristics
Fig. 20 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
TJ = 25°C; tp = 80µs
180
20
18
16
14
12
160
140
120
100
80
T
= 25°C
J
T
= 125°C
J
I
I
I
= 6.25A
= 12.5A
= 25A
CE
CE
CE
10
8
60
6
T
= 125°C
40
J
4
20
T
= 25°C
15
2
J
0
0
0
5
10
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 23 - Typical VCE vs. VGE
Fig. 22 - Typ. Transfer Characteristics
TJ = 25°C
VCE = 50V; tp = 10µs
20
18
16
14
12
10
8
10000
1000
100
Cies
I
I
I
= 6.25A
= 12.5A
= 25A
CE
CE
CE
Coes
Cres
6
4
2
0
10
5
10
15
20
0
20
40
60
(V)
80
100
V
(V)
V
GE
CE
Fig.24 - Typical VCE vs. VGE
Fig. 25- Typ. Capacitance vs. VCE
TJ = 125°C
VGE= 0V; f = 1MHz
8
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GB25RF120K
Brake
50
45
40
35
30
25
20
15
10
5
16
14
12
10
8
25°C
125°C
400V
600V
6
4
2
0
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
0
25
Q
50
75
100
125
V
F
, Total Gate Charge (nC)
G
Fig. 26 - Typical Gate Charge vs. VGE
Fig. 27 - Typ. Diode Forward Characteristics
ICE = 12.5A; L = 1mH
tp = 80µs
3000
2500
2000
1500
1000
500
1000
td
OFF
E
ON
t
F
100
td
ON
E
OFF
t
R
0
10
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
C
C
Fig. 28 - Typ. Energy Loss vs. IC
Fig. 29 - Typ. Switching Time vs. IC
TJ = 125°C; L=400µH; VCE= 600V,RG= 22Ω; VGE= 15V
TJ = 125°C; L=400µH; VCE= 600V,RG= 22Ω;VGE= 15V
2000
10000
E
ON
1500
1000
100
10
td
OFF
t
E
OFF
1000
500
0
F
td
t
ON
R
0
50
100
150
0
25
50
75
(
100
125
150
R
(
)
Ω
R
)
Ω
G
G
Fig. 31 - Typ. Switching Time vs. RG
Fig. 30 - Typ. Energy Loss vs. RG
TJ = 125°C; L=400µH; VCE= 600V, ICE= 12.5A; VGE= 15V
9
TJ = 125°C; L=400µH; VCE= 600V, ICE= 12.5A; VGE= 15V
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GB25RF120K
Brake
45
40
35
30
25
20
15
10
5
35
30
25
20
15
10
5
R
4.7 Ω
G =
R
10
Ω
G =
R
22
Ω
G =
G =
R
47
Ω
0
0
0
5
10
15
(A)
20
25
30
0
10
20
30
40
50
I
R
(
Ω)
F
G
Fig. 33- Typical Diode IRR vs. RG
Fig. 32 - Typical Diode IRR vs. IF
TJ = 125°C; IF = 12.5A
TJ = 125°C
35
30
25
20
15
10
5
0
0
500
1000
1500
di /dt (A/µs)
F
Fig. 34 - Typical Diode IRR vs. diF / dt
VCC = 600V; VGE = 15V; IF = 12.5A; TJ = 125°C
10
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GB25RF120K
Brake
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.268
0.642
0.290
0.000469
0.018501
0.056904
τ
1τ1
τ
0.01
0.001
0.0001
2 τ2
3τ3
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT)
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.05
τ
0.1
J τJ
τ
τ
0.714
1.193
0.394
0.000489
0.020644
0.154110
Cτ
0.02
0.01
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode)
900
45
40
35
30
25
20
15
10
5
900
800
700
600
500
400
300
200
100
0
45
40
35
30
25
20
15
10
5
800
700
600
500
400
300
200
100
0
tf
tr
TEST CURRENT
90% test current
90% ICE
5% VCE
5% ICE
10% test current
5% VCE
Eon Loss
Eoff Loss
0
0
-100
-5
-100
-5
-0.60 -0.10 0.40
0.90
1.40
9.80 10.00 10.20 10.40 10.60 10.80
Time(µs)
Time (µs)
Fig. WF3- Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.4
Fig. WF4- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
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11
GB25RF120K
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
VCC
DRIVER
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
12
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GB25RF120K
Econo2 PIM Package Outline
Dimensions are shown in millimeters (inches)
0.25 [.0098] CONVEX
Econo2 PIM Part Marking Information
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/02
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13
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