GB75YF120N [INFINEON]
IGBT FOUR PAK MODULE; 四IGBT模块PAK
| 型号： | GB75YF120N |
| 厂家： | 
Infineon |
| 描述： | IGBT FOUR PAK MODULE |
| 文件： | 总9页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27209 01/06
GB75YF120N
IGBT FOUR PAK MODULE
Features
VCES = 1200V
IC = 75A @ TC = 67°C
VCE(on) typ. = 3.4V
• Square RBSOA
• HEXFRED low Qrr, low Switching Energy
• Positive VCE(on) Temperature Coefficient
• Copper Baseplate
• Low Stray Inductance Design
ECONO2 4PAK
Benefits
• Benchmark Efficiency for SMPS appreciation
in particular HF welding
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink space saving
• PCBSolderableTerminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ Tc=25°C
IC @ Tc=80°C
ICM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
100
67
200
200
40
25
150
A
ILM
IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
±20
V
P
D @ Tc=25°C
Maximum Power Dissipation (IGBT)
Maximum Power Dissipation (IGBT)
Maximum Operating Junction Temperature
Storage Temperature Range
480
270
150
W
PD @ Tc=80°C
TJ
TSTG
VISOL
°C
V
-40 to +125
AC 2500 (MIN)
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Min
Typical
Maximum
Units
RθJC(IGBT)
θJC(Diode)
RθCS(Module)
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
-
-
-
0.26
1.00
-
3.3
-
°C/W
R
-
-
0.05
-
170
2.7
-
N*m
g
1
GB75YF120N
Bulletin I27209 01/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units Conditions
BV(CES)
VCE(ON)
1200
-
-
V
VGE = 0 IC = 500µA
-
-
-
-
3.4
3.8
4.0
4.0
4.5
4.5
V
IC = 75A VGE = 15V
IC = 100A VGE = 15V
IC = 75A VGE = 15V TJ = 125°C
IC = 100A VGE = 15V TJ = 125°C
VCE = VGE IC = 250µA
4.53 5.1
VGE(th)
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage
Thresold Voltage temp. coefficient
Zero Gate Voltage Collector Current
4.0
5.0
-11
7
580 2000
3.9 5.0
4.43 5.8
4.37 5.4
5.02 6.4
6.0
-
250
-
-
-
-
-
-
-
-
mV/°C VCE = VGE IC = 1mA (25°C-125°C)
µA
VGE = 0 VCE = 1200V
VGE = 0 VCE = 1200V Tj = 125°C
IF = 75A
VFM
Diode Forward Voltage Drop
V
IF = 100A
IF = 75A Tj = 125°C
IF = 100A Tj = 125°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
-
± 200 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
QG
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Risetime
Turn-Off delay time
Falltime
-
-
-
-
-
-
-
-
-
-
-
-
-
630
65
250
1505
2411
3916
2248
3351
7599
169
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = 50A
VCC = 600A
VGE = 15V
QGE
QGC
EON
EOFF
ETOT
EON
EOFF
ETOT
td(on)
tr
nC
µJ
IC = 50A VCC = 600V
VGE = 15V RG = 4.7Ω L = 500µH
Tj = 25°C c
IC = 50A VCC = 600V
VGE = 15V RG = 4.7Ω L = 500µH
Tj = 125°C c
IC = 50A VCC = 600V
VGE = 15V RG = 4.7Ω L =500µH
Tj = 125°C
µJ
ns
71
393
136
td(off)
tf
RBSOA
Reverse Bias Safe Operating Area
FULLSQUARE
Tj = 150°C IC = 150A
RG =10Ω VGE = 15V to 0
Tj = 150°C
VCC = 900V VP = 1200V
RG = 10Ω VGE = 15V to 0
Tj = 25°C
SCSOA
Short Circuit Safe Operating Area
10
-
-
µs
A
Irr
Diode Peak Rev. Recovery Current
Diode Rev. Recovery Time
-
-
-
-
-
-
1.45 2.5
2.35 4.0
0.401 0.5
0.655 0.8
0.181 0.4
0.54 1.5
Tj = 125°C
trr
µs
µs
µC
µC
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VCC = 600V IF = 75A
dI/ dt = 10A/µs
Qrr
Total Rev. Recovery Charge
c
Energy losses include "tail" and diode reverse recovery.
2
GB75YF120N
Bulletin I27209 01/06
500
400
300
200
100
0
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160
T (°C)
C
T (°C)
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
100
10
1000
100
10
1
0.1
0.01
1
1
10
100
(V)
1000
10000
10
100
1000
10000
T (°C)
V
C
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3
GB75YF120N
Bulletin I27209 01/06
160
160
140
120
100
80
VGE = 18V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
VGE = 15V
VGE = 12V
VGE = 9V
140
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
V
(V)
CE
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 500µs
TJ = 125°C; tp = 500µs
160
140
120
100
80
20
18
16
14
12
10
8
I
I
= 75A
= 50A
= 25A
CE
25°C
125°C
CE
I
CE
60
6
40
4
20
2
0
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
7
9
11
13
(V)
15
17
19
V (V)
F
V
GE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. Diode Forward Characteristics
TJ = 25°C
tp = 500µs
4
GB75YF120N
Bulletin I27209 01/06
20
18
16
14
12
10
8
300
250
200
150
100
50
I
I
= 75A
= 50A
= 25A
CE
T = 25°C
J
CE
T = 125°C
J
I
CE
6
4
2
0
0
7
9
11
13
(V)
15
17
19
5
6
7
8
9
10
11
12
V
(V)
V
GE
GE
Fig. 10 - Typ. Transfer Characteristics
CE = 20V; tp = 500µs
Fig. 9 - Typical VCE vs. VGE
V
TJ = 125°C
5.5
5
1
0.1
T = 25°C
T = 125°C
J
J
4.5
4
T = 125°C
J
3.5
3
0.01
0.001
T = 25°C
J
2.5
2
400
600
800
1000
1200
0
0.2
0.4
0.6
0.8
1
V
(V)
I (mA)
CES
C
Fig. 11 - Typ Zero Gate Voltage Collector
Fig. 12 - Typ Threshold Voltage
Current
5
GB75YF120N
Bulletin I27209 01/06
1
9
8
7
6
td
OFF
td
ON
E
OFF
5
t
0.1
F
4
3
2
1
0
E
ON
t
R
0.01
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
I (A)
I (A)
C
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 5Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 5Ω; VGE= 15V
12
10
8
800
700
600
500
400
300
200
100
0
125°C
125°C
25°C
6
4
25°C
2
0
0
20
40
60
80
100
0
20
40
60
80
100
dI dt (A/µs)
F/
dI dt (A/µs)
F/
Fig. 16- Typical Diode tRR vs. diF/dt
Fig. 15- Typical Diode IREC vs. diF/dt
VCC= 600V; IF= 50A
VCC= 600V; IF= 50A
6
GB75YF120N
Bulletin I27209 01/06
16
14
12
10
8
1600
1400
1200
1000
800
600
400
200
0
125°C
typical value
6
4
25°C
2
0
0
20
40
60
80
100
0
100 200 300 400 500 600 700
Q , TotalGateCharge(nC)
G
dI dt (A/µs)
F/
Fig. 18 - Typical Gate Charge vs. VGE
Fig. 17- Typical Diode QRR vs. diF/dt
ICE = 5.0A; L = 600µH
V
CC= 600V; IF= 50A
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.001
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig19 -MaximumTransientThermalImpedance, Junction-to-Case(IGBT)
7
GB75YF120N
Bulletin I27209 01/06
10
D = 0.50
0.20
0.10
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.05
0.02
0.01
0.01
0.001
1E-006
1E-005
0.0001
0.001
t , Rectangular Pulse Duration (sec)
1
Fig20 -MaximumTransientThermalImpedance, Junction-to-Case(DIODE)
L
L
VCC
80 V
DUT
DUT
0
1000V
Rg
1K
Fig.C.T.1-GateChargeCircuit(turn-off)
Fig.C.T.2 - RBSOA Circuit
V
CC
CM
diode clamp /
R =
I
DUT
Driver
L
D
- 5V
900V
C
DUT
DUT /
VCC
VCC
DRIVER
DUT
Rg
Rg
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
8
GB75YF120N
Bulletin I27209 01/06
Econo2 4Pak Package Outline
Dimensions are shown in millimeters (inches)
1.25
48,49
21,22
40
41
28
29
15,16,17
5,6,7
INV 600V 15A
(beta sample)
36
37
32
33
46,47
23,24
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
9
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