HF30D120ACE [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, 125 MM, WAFER;
| 型号： | HF30D120ACE |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, 125 MM, WAFER 功效 二极管 |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93875A
HF30D120ACE
Hexfred Die in Wafer Form
Features
• GEN3 Hexfred Technology
1200V
I
F(nom)=15A
• Low VF
• Low IRR
• Low tRR
• Soft Reverse Recovery
VF(typ)= 2.05V @ IF(nom) @ 25°C
Motor Control Antiparallel Diode
125mm Wafer
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
Electrical Characteristics (Wafer Form)
Parameter
Description
Guaranteed (min, max)
Test Conditions
VF
Forward Voltage Drop
1.50V min, 2.05V max IF = 7.5A, TJ = 25°C
BVR
IRM
Reverse Breakdown Voltage
Reverse Leakage Current
1200V min
5µA max
TJ = 25°C, IR = 150µA
TJ = 25°C, VR = 1200V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Cr- Ni - Ag, (1kA - 4kA - 6kA)
99% Al/1% Si, (3µm)
0.115" x 0.155"
Wafer Diameter
125mm, with std. < 100 > flat
310µm, +/-15µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01 - 5365
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
2.92
[.115]
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. DIMENSIONAL TOLERANCES :
BONDING PADS: < 0.635 TOLERANCE
=
+ /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE + /- 0.025
WIDT H
&
2.51
[.099]
3.94
[.155]
=
ANODE
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
OVE R AL L DIE :
WIDT H
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
&
LENGTH
1.50
[.059]
01-5365
www.irf.com
Page 1
7/27/2000
HF30D120ACE
Hexfred Die in Wafer Form
Fig.1 - Typical Diode Recovery
VCC=600V; Rg=10 ; T =125°C;
Ω
J
L=200µH; Driver=IRGC15B120KB
100
0
30
20
10
0
Current
-100
-200
-300
-400
-500
-600
-700
-10
-20
-30
-40
-50
Voltage
-0.10
0.10
0.30
0.50
0.70
0.90
time (µs)
Fig.2 - Typical Diode Forward
Characteristic
Fig. 3 - Diode Recovery Circuit
DUT
tp=300µs
100
90
80
70
60
50
40
30
20
10
0
- 40°C
25°C
125°C
L
DRIVER
VCC
Rg
0
2
4
6
VF (V)
www.irf.com
Page 2
7/27/2000
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