HF50D120ACE [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER;
| 型号： | HF50D120ACE |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, 125 MM, WAFER 功效 二极管 |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93877
HF50D120ACE
Hexfred Die in Wafer Form
Features
GEN3 Hexfred Technology
Low VF
Low IRR
Low tRR
1200V
F(nom)=50A
VF(typ)=1ꢀ78V@IF(nom) @ 25°C
Motor Control Antiparallel Diode
125mm Wafer
I
Soft Reverse Recovery
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
Electrical Characteristics (Wafer Form)
Parameter
Description
Guaranteed (min, max)
TestConditions
V
F
Forward Voltage Drop
1'15V min, 1'47V max IC = 10A, TJ = 25°C
BVR
IRM
Reverse Breakdown Voltage
Reverse Leakage Current
1200Vmin
20µAmax
TJ = 25°C, IR = 150µA
TJ = 25°C, VR = 1200V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Cr- Ni - Ag, (1kA - 4kA - 6kA)
99%Al/1%Si, (3µm)
0'257ꢀ x 0'257"
Wafer Diameter
125mm, with std' < 100 > flat
310µm, +/-15µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg' Number
Minimum Street Width
01 - 5350
100µm
Reject Ink Dot Size
0'25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
NOT ES:
6.53
[.257]
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. DIMENSIONAL TOLERANCES:
BONDING PADS: < 0.635 TOLERANCE
=
+ /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE + /- 0.025
5.21
[.205]
6.53
[.257]
ANODE
WIDT H
&
=
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
OVERALL DIE:
WIDT H
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
5.21
[.205]
01-5350
&
LENGTH
wwwꢀirfꢀcom
4/7/2000
Page 1
HF50D120ACE
Hexfred Die in Wafer Form
Fig.1 - Typical Diode Recovery
VCC=600V; Rg=5 ; T =125°C;
Ω
J
L=200µH; Driver=IRGC50B120KB
100
0
80
60
40
20
0
-100
-200
-300
-400
-500
-600
-700
Current
-20
-40
-60
-80
Voltage
-0.10
0.10
0.30
0.50
0.70
0.90
time (µs)
Fig.2 - Typical Diode Forward
Characteristic
Figꢀ 3 - Diode Recovery Circuit
tp=300µs
100
90
80
70
60
50
40
30
20
10
0
DUT
- 40°C
25°C
125°C
L
DRIVER
VCC
Rg
0
1
2
3
VF (V)
wwwꢀirfꢀcom
4/7/2000
Page 2
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