HFA04TB60STRR [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 4A, Silicon, D2PAK-3;
| 型号： | HFA04TB60STRR |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 4A, Silicon, D2PAK-3 二极管 局域网 超快软恢复二极管 快速软恢复二极管 |
| 文件： | 总6页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD -2.399 rev. A 11/00
HFA04TB60
TM
HEXFRED
Ultrafast,SoftRecoveryDiode
BASE
CATHODE
Features
VR = 600V
VF = 1.8V
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
4
2
• Very Low Qrr
Qrr * = 40nC
•
Specified at Operating Conditions
di(rec)M/dt * = 280A/µs
3
1
Benefits
ANODE
CATHODE
* 125°C
2
• Reduced RFI and EMI
•
Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
•
Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA04TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
TO-220AC
basic ratings of 600 volts and
8 amps per Leg continuous current, the
HFA04TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the t portion of recovery. The
b
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
600
4.0
25
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
A
16
25
10
W
C
-55 to +150
TSTG
Storage Temperature Range
1
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
V
IR = 100µA
IF = 4.0A
IF = 8.0A
1.5 1.8
1.8 2.2
1.4 1.7
0.17 3.0
44 300
4.0 8.0
See Fig. 1
See Fig. 2
Max Forward Voltage
I
F = 4.0A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
CT
LS
Junction Capacitance
Series Inductance
pF
nH
VR = 200V
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5, 6 & 16
Min Typ Max Units
Test Conditions
trr
17
IF = 1.0A, di /dt = 200A/µs, VR = 30V
f
trr1
28
38
42
57
ns TJ = 25°C
TJ = 125°C
trr2
IF = 4.0A
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
2.9 5.2
3.7 6.7
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
VR = 200V
40
60
nC
70 105
280
235
di /dt = 200A/µs
f
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During t See Fig. 11 & 12
A/µs
b
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead!
Lead Temperature
300
5.0
80
°C
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
thJC
"
thA
thS
K/W
#
0.5
2.0
0.07
g
(oz)
Wt
Weight
6.0
5.0
12
10
Kg-cm
lbf•in
Mounting Torque
T
!
"
#
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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HFA04TB60
Bulletin PD-2.399 rev. A 11/00
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
0.1
T = 150°C
J
T = 25°C
J
0.01
0.001
T = 125°C
J
T = 25°C
J
0
100
200
300
400
500
Reverse Voltage - V (V)
Fig. 2 - Typical Reverse CurrentRvs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( V )
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current,
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
0.1
t
1
t
2
Notes:
1. Duty factor D =
t
x
/ t
1
2. Peak T =P
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
50
45
40
35
30
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
I
F
I
I
= 8.0A
= 4.0A
F
F
6
4
25
2
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
0
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1000
200
VR = 200V
TJ = 125°C
TJ = 25°C
VR= 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
4
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HFA04TB60
Bulletin PD-2.399 rev. A 11/00
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
RRM
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by trr
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
2. IRRM - Peak reverse recovery current
Qrr =
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
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5
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and inches
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
6
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