HFA08PB60PBF [INFINEON]

Ultra, Soft Recovery Diode; 超薄,软恢复二极管
HFA08PB60PBF
型号: HFA08PB60PBF
厂家: Infineon    Infineon
描述:

Ultra, Soft Recovery Diode
超薄,软恢复二极管

二极管 软恢复二极管
文件: 总6页 (文件大小:189K)
中文:  中文翻译
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PD-95969  
HFA08PB60PbF  
Ultrafast, Soft Recovery Diode  
HEXFREDTM  
BASE  
CATHODE  
Features  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
VR = 600V  
VF(typ.)* = 1.4V  
IF(AV) = 8.0A  
4
Qrr (typ.)= 65nC  
IRRM = 3.5A  
• Very Low Qrr  
• Specified at Operating Conditions  
• Lead-Free  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
2
trr(typ.) = 18ns  
3
1
CATHODE  
ANODE  
2
di(rec)M/dt (typ.)* = 210A/µs  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA08PB60 is a state of the art center tap ultra fast  
recovery diode. Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 volts and 8 amps continuous current, the HFA08PB60  
is especially well suited for use as the companion diode for IGBTs and  
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line  
features extremely low values of peak recovery current (IRRM) and does not  
TO-247AC(Modified)  
exhibit any tendency to "snap-off" during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the switching transistor.  
These HEXFRED advantages can help to significantly reduce snubbing,  
component count and heatsink sizes. The HEXFRED HFA08PB60 is ideally  
suited for applications in power supplies and power conversion systems (such  
as inverters), motor drives, and many other similar applications where high  
speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max  
Units  
VR  
Cathode-to-Anode Voltage  
Continuous Forward Current  
Continuous Forward Current  
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
600  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
8.0  
60  
24  
36  
14  
A
IFRM  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
W
C
-55 to +150  
TSTG  
Storage Temperature Range  
* 125°C  
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1
12/1/04  
HFA08PB60PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
VBR  
VFM  
Cathode Anode Breakdown Voltage  
600 ––– –––  
––– 1.4 1.7  
––– 1.7 2.1  
––– 1.4 1.7  
––– 0.3 5.0  
––– 100 500  
V
IR = 100µA  
IF = 8.0A  
See Fig. 1  
See Fig. 2  
Max Forward Voltage  
V
IF = 16A  
IF = 8.0A, TJ = 125°C  
VR = VR Rated  
IRM  
Max Reverse Leakage Current  
µA  
TJ = 125°C, VR = 0.8 x VR RatedD Rated  
See Fig. 3  
VR = 200V  
CT  
LS  
Junction Capacitance  
Series Inductance  
––– 10  
25  
pF  
Measured lead to lead 5mm from  
package body  
––– 8.0 –––  
nH  
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Reverse Recovery Time  
See Fig. 5, 10  
Min Typ Max Units  
Test Conditions  
IF = 1.0A, dif/dt = 200A/µs, VR = 30V  
trr  
18  
trr1  
37  
55  
55  
90  
ns TJ = 25°C  
TJ = 125°C  
trr2  
IF = 8.0A  
VR = 200V  
IRRM1  
IRRM2  
Qrr1  
Qrr2  
Peak Recovery Current  
See Fig. 6  
3.5 5.0  
4.5 8.0  
65 138  
124 360  
240  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
A
Reverse Recovery Charge  
See Fig. 7  
nC  
dif/dt = 200A/µs  
di(rec)M/dt1 Peak Rate of Fall of Recovery Current  
See Fig. 8  
A/µs  
di(rec)M/dt2 During tb  
210  
Thermal - Mechanical Characteristics  
Parameter  
Min  
Typ  
Max  
Units  
Tlead  

Lead Temperature  
––––  
––––  
––––  
––––  
––––  
––––  
6.0  
––––  
––––  
––––  
0.25  
6.0  
300  
3.5  
°C  
RθJC  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Case to Heat Sink  
K/W  
RθJA‚  
40  
RθCS  
ƒ
––––  
––––  
––––  
12  
g
Weight  
Wt  
0.21  
––––  
––––  
(oz)  
Kg-cm  
lbf•in  
Mounting Torque  
5.0  
10  

‚
ƒ
0.063 in. from Case (1.6mm) for 10 sec  
Typical Socket Mount  
Mounting Surface, Flat, Smooth and Greased  
2
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HFA08PB60PbF  
100  
10  
1
1000  
100  
10  
T = 150°C  
J
T = 125°C  
J
1
0.1  
T = 25°C  
J
0.01  
0.001  
T = 150°C  
J
T = 125°C  
J
0
100  
200  
300  
400  
500  
600  
T = 25°C  
J
Reverse Voltage - V (V)  
R
Fig. 2 - Typical Reverse Current vs. Reverse  
Voltage  
A
100  
T = 25°C  
J
10  
0.1  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
Forward Voltage Drop - V  
(V)  
FM  
1
Fig. 1 - Maximum Forward Voltage Drop  
1
10  
100  
1000  
vs. Instantaneous Forward Current  
Reverse Voltage - V (V)  
R
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.02  
P
DM  
SINGLE PULSE  
0.01  
0.1  
(THERMAL RESPONSE)  
t
1
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T =P  
x Z  
+ T  
thJC C  
J
DM  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics  
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3
HFA08PB60PbF  
20  
16  
12  
8
80  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 16A  
= 8.0A  
= 4.0A  
F
I
I
F
F
I
I
I
= 16A  
= 8.0A  
= 4.0A  
F
60  
40  
20  
F
F
4
VR = 200V  
TJ = 125°C  
TJ = 25°C  
0
100  
0
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 6 - Typical Recovery Current vs. dif/dt,  
Fig. 5 - Typical Reverse Recovery vs. dif/dt,  
(per Leg)  
(per Leg)  
500  
10000  
1000  
100  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
400  
I
I
= 16A  
= 8.0A  
= 4.0A  
F
F
I
I
= 16A  
F
I
F
= 8.0A  
= 4.0A  
F
300  
200  
100  
0
I
F
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 7 - Typical Stored Charge vs. dif/dt,  
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,  
(per Leg)  
(per Leg)  
4
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HFA08PB60PbF  
3
t
rr  
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT  
4
Q
rr  
V
= 200V  
2
R
I
0.5  
RRM  
I
RRM  
5
di(rec)M/dt  
0.01  
0.75 I  
RRM  
L = 70µH  
1
di /dt  
f
D.U.T.  
4. Qrr - Area under curve defined by trr  
1. dif/dt - Rate of change of current  
through zero crossing  
D
and IRRM  
dif/dt  
trr X IRRM  
ADJUST  
IRFP250  
G
Qrr  
=
2. IRRM - Peak reverse recovery current  
2
3. trr - Reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current  
S
5. di(rec)M/dt - Peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and  
Fig. 9 - Reverse Recovery Parameter Test  
Definitions  
Circuit  
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5
HFA08PB60PbF  
OutlineTable  
Conforms to JEDEC Outline TO-247AC MODIFIED  
Dimensions in millimeters and inches  
*Note:Marking"P"indicatesLead-Free  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 12/04  
6
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