HFA08PB60PBF [INFINEON]
Ultra, Soft Recovery Diode; 超薄,软恢复二极管型号: | HFA08PB60PBF |
厂家: | Infineon |
描述: | Ultra, Soft Recovery Diode |
文件: | 总6页 (文件大小:189K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-95969
HFA08PB60PbF
Ultrafast, Soft Recovery Diode
HEXFREDTM
BASE
CATHODE
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
VR = 600V
VF(typ.)* = 1.4V
IF(AV) = 8.0A
4
Qrr (typ.)= 65nC
IRRM = 3.5A
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
2
trr(typ.) = 18ns
3
1
CATHODE
ANODE
2
di(rec)M/dt (typ.)* = 210A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08PB60 is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 8 amps continuous current, the HFA08PB60
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
TO-247AC(Modified)
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08PB60 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
600
V
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
8.0
60
24
36
14
A
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
W
C
-55 to +150
TSTG
Storage Temperature Range
* 125°C
www.irf.com
1
12/1/04
HFA08PB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
1.4 1.7
1.7 2.1
1.4 1.7
0.3 5.0
100 500
V
IR = 100µA
IF = 8.0A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 16A
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
10
25
pF
Measured lead to lead 5mm from
package body
8.0
nH
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5, 10
Min Typ Max Units
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr
18
trr1
37
55
55
90
ns TJ = 25°C
TJ = 125°C
trr2
IF = 8.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 6
3.5 5.0
4.5 8.0
65 138
124 360
240
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 7
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
See Fig. 8
A/µs
di(rec)M/dt2 During tb
210
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead
Lead Temperature
6.0
0.25
6.0
300
3.5
°C
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
K/W
RθJA
40
RθCS
12
g
Weight
Wt
0.21
(oz)
Kg-cm
lbfin
Mounting Torque
5.0
10
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
HFA08PB60PbF
100
10
1
1000
100
10
T = 150°C
J
T = 125°C
J
1
0.1
T = 25°C
J
0.01
0.001
T = 150°C
J
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
0.01
0.1
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA08PB60PbF
20
16
12
8
80
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
= 8.0A
= 4.0A
F
I
I
F
F
I
I
I
= 16A
= 8.0A
= 4.0A
F
60
40
20
F
F
4
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
0
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt,
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
(per Leg)
500
10000
1000
100
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
I
= 16A
= 8.0A
= 4.0A
F
F
I
I
= 16A
F
I
F
= 8.0A
= 4.0A
F
300
200
100
0
I
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt,
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(per Leg)
(per Leg)
4
www.irf.com
HFA08PB60PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
www.irf.com
5
HFA08PB60PbF
OutlineTable
Conforms to JEDEC Outline TO-247AC MODIFIED
Dimensions in millimeters and inches
*Note:Marking"P"indicatesLead-Free
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/04
6
www.irf.com
相关型号:
HFA08SD60STR
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
INFINEON
HFA08SD60STRL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, SMD-220, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明