HFA08TB120SPBF [INFINEON]

Ultrafast, Soft Recovery Diode ; 超快,软恢复二极管
HFA08TB120SPBF
型号: HFA08TB120SPBF
厂家: Infineon    Infineon
描述:

Ultrafast, Soft Recovery Diode
超快,软恢复二极管

整流二极管 功效 局域网 软恢复二极管
文件: 总4页 (文件大小:146K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-96034  
HFA08TB120SPbF  
HEXFREDTM  
Ultrafast, Soft Recovery Diode  
Features  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
VR = 1200V  
Base  
Cathode  
VF(typ.)* = 2.4V  
2
IF(AV) = 8.0A  
• Very Low Qrr  
Qrr (typ.)=140nC  
• Specified at Operating Conditions  
• Lead-Free  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
IRRM(typ.) = 4.5A  
trr(typ.) = 28ns  
3
1
Anode  
N/C  
di(rec)M/dt (typ.)* = 85A/µs  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA08TB120S is a state of the art ultra fast recovery  
diode. Employing the latest in epitaxial construction and advanced processing  
techniques it features a superb combination of characteristics which result in  
performance which is unsurpassed by any rectifier previously available. With  
basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S  
is especially well suited for use as the companion diode for IGBTs and  
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line  
D2 Pak  
features extremely low values of peak recovery current (IRRM) and does not  
exhibit any tendency to "snap-off" during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the switching transistor.  
These HEXFRED advantages can help to significantly reduce snubbing,  
component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally  
suited for applications in power supplies and power conversion systems (such  
as inverters), motor drives, and many other similar applications where high  
speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
1200  
V
IF @ TC = 100°C  
IFSM  
Continuous Forward Current  
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Power Dissipation  
8.0  
130  
32  
A
IFRM  
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
73.5  
29  
W
°C  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
* 125°C  
1
www.irf.com  
10/07/05  
HFA08TB120SPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
VBR  
VFM  
Cathode Anode Breakdown Voltage  
1200 ––– –––  
––– 2.6 3.3  
––– 3.4 4.3  
––– 2.4 3.1  
––– 0.31 10  
––– 135 1000  
V
IR = 100µA  
IF = 8.0A  
IF = 16A  
Max Forward Voltage  
V
IF = 8.0A, TJ = 125°C  
VR = VR Rated  
TJ = 125°C, VR = 0.8 x VR RatedD Rated  
VR = 200V  
IRM  
Max Reverse Leakage Current  
µA  
CT  
LS  
Junction Capacitance  
Series Inductance  
––– 11  
20  
pF  
Measured lead to lead 5mm from  
package body  
––– 8.0 –––  
nH  
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Reverse Recovery Time  
See Fig. 5  
Min. Typ. Max. Units  
––– 28 –––  
Test Conditions  
IF = 1.0A, dif/dt = 200A/µs, VR = 30V  
trr  
trr1  
––– 63  
95  
ns TJ = 25°C  
TJ = 125°C  
trr2  
––– 106 160  
––– 4.5 8.0  
IF = 8.0A  
VR = 200V  
IRRM1  
IRRM2  
Qrr1  
Qrr2  
Peak Recovery Current  
See Fig. 6  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
A
––– 6.2  
11  
Reverse Recovery Charge  
See Fig. 7  
––– 140 380  
––– 335 880  
––– 133 –––  
––– 85 –––  
nC  
dif/dt = 200A/µs  
di(rec)M/dt1 Peak Rate of Fall of Recovery Current  
See Fig. 8  
A/µs  
di(rec)M/dt2 During tb  
Thermal - Mechanical Characteristics  
Parameter  
Lead Temperature  
Min.  
Typ.  
––––  
––––  
––––  
2.0  
Max.  
300  
Units  
°C  
T

‚
––––  
––––  
––––  
––––  
––––  
lead  
RthJC  
RthJA  
Wt  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Weight  
1.7  
40  
K/W  
––––  
––––  
g
0.07  
(oz)  

‚
0.063 in. from Case (1.6mm) for 10 sec  
Typical Socket Mount  
2
www.irf.com  
HFA08TB120SPbF  
D2PAK Package Outline  
Dimensions are shown in millimeters (inches)  
D2PAK Part Marking Information  
THIS IS A HFA08TB120S  
(K)  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
DAT E CODE  
YY = YEAR  
ASSEMBLY  
LOT CODE  
WW = WE E K  
P = DE S IGNAT E S L E AD-F R E E  
PRODUCT (OPTIONAL)  
(N/C)  
(A)  
www.irf.com  
3
HFA08TB120SPbF  
D2PAK Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualifications Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/05  
4
www.irf.com  

相关型号:

HFA08TB120SPBF_10

HEXFRED Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB120STRL

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
INFINEON

HFA08TB120STRL

暂无描述
VISHAY

HFA08TB120STRLPBF

HEXFRED Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB120STRR

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
INFINEON

HFA08TB120STRRPBF

HEXFRED Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB60

Ultrafast, Soft Recovery Diode
INFINEON

HFA08TB60

Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB60PBF

Ultrafast, Soft Recovery Diode
INFINEON

HFA08TB60PBF

Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB60PBF_11

HEXFRED Ultrafast Soft Recovery Diode, 8 A
VISHAY

HFA08TB60S

Ultrafast, Soft Recovery Diode
INFINEON