HFA12PA120C [INFINEON]

Ultrafast, Soft Recovery Diode; 超快,软恢复二极管
HFA12PA120C
型号: HFA12PA120C
厂家: Infineon    Infineon
描述:

Ultrafast, Soft Recovery Diode
超快,软恢复二极管

整流二极管 局域网 超快软恢复二极管 快速软恢复二极管
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PD -2.362 rev. C 01/2000  
HFA12PA120C  
Ultrafast, Soft Recovery Diode  
TM  
HEXFRED  
Features  
VR = 1200V  
VF(typ.)* = 2.4V  
IF(AV) = 6A  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
• Very Low Qrr  
• GuaranteedAvalanche  
• Specified at Operating Conditions  
Qrr (typ.)=116nC  
IRRM(typ.) = 4.4A  
trr(typ.) = 26ns  
di(rec)M/dt (typ.)* = 100A/µs  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
TO-247AC  
Description  
International Rectifier's HFA12PA120C is a state of the art center tap ultra fast  
recovery diode. Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of characteristics which  
resultsinperformancewhichisunsurpassedbyanyrectifierpreviouslyavailable. The  
HFA12PA120Chasbasicratingsof1200voltsand6ampsperlegcontinuouscurrent.  
In addition to ultra fast recovery time, the HEXFRED product line features extremely  
lowvaluesofpeakrecoverycurrent(IRRM)anddoesnotexhibitanytendencyto"snap-  
off" during the tb portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower switching losses in both  
the diode and the switching transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and heatsink sizes. The HEXFRED  
HFA12PA120C is ideally suited for applications in power supplies and power  
conversion systems (such as inverters, converters, UPS systems, and power factor  
correction circuits), motor drives, and many other similar applications where high  
speed, high efficiency is needed.  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
Continuous Forward Current  
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
1200  
6.0  
80  
V
IF @ TC = 100°C  
A
IFSM  
IFRM  
D @ TC = 25°C  
24  
62.5  
25  
P
W
PD @ TC = 100°C  
TJ  
-55 to +150  
°C  
TSTG  
Storage Temperature Range  
* 125°C  
1
HFA12PA120C  
PD-2.362 rev. C 01/2000  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
IR = 100µA  
VBR  
Cathode Anode Breakdown  
1200 ––– –––  
V
Voltage  
VFM  
Max. Forward Voltage  
––– 2.7 3.0  
––– 3.5 3.9  
––– 2.4 2.8  
IF = 6.0A  
V
IF = 12A  
IF = 6.0A, TJ = 125°C  
VR = VR Rated  
IRM  
Max.Reverse LeakageCurrent ––– 0.26 5.0  
––– 110 500  
µA  
TJ = 125°C, VR = 0.8 x VR RatedD R  
CT  
LS  
JunctionCapacitance  
SeriesInductance  
––– 9.0 14  
––– 8.0 –––  
pF  
nH  
VR = 200V  
Rated  
Measured lead to lead 5mm from pkg body  
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
trr  
ReverseRecoveryTime  
––– 26  
––– 53  
––– 87  
––– 4.4  
––– 5.0  
–––  
80  
IF = 1.0A, dif/dt = 200A/µs, VR = 30V  
trr1  
ns TJ = 25°C  
TJ = 125°C  
trr2  
130  
8.0  
9.0  
IF = 6.0A  
VR = 200V  
IRRM1  
IRRM2  
Qrr1  
Qrr2  
Peak Recovery Current  
ReverseRecoveryCharge  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
A
––– 116 320  
––– 233 585  
––– 180 –––  
––– 100 –––  
nC  
dif/dt = 200A/µs  
di(rec)M/dt1 PeakRateofRecovery  
di(rec)M/dt2 Current During tb  
A/µs  
Thermal - Mechanical Characteristics  
Parameter  
Min.  
Typ.  
Max.  
Units  
Tlead  
RthJC  
RthJA  
LeadTemperature  
––––  
––––  
300  
2.0  
°C  

Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Case to Heat Sink  
Weight  
––––  
––––  
––––  
––––  
––––  
6.0  
––––  
––––  
0.5  
‚
80  
K/W  
RthCS ƒ  
Wt  
––––  
––––  
––––  
12  
2.0  
g
0.07  
––––  
––––  
(oz)  
MountingTorque  
Kg-cm  
lbf•in  
5.0  
10  

0.063 in. from Case (1.6mm) for 10 sec  
‚
ƒ
Typical Socket Mount  
Mounting Surface, Flat, Smooth and Greased  
2
HFA12PA120C  
PD-2.362 rev. C 01/2000  
100  
10  
1
1000  
100  
10  
T
= 150˚C  
J
125˚C  
100˚C  
1
25˚C  
0.1  
0.01  
0
200 400 600 800 1000 1200 1400  
ReverseVoltage-VR (V)  
100  
10  
1
T
= 150˚C  
= 125˚C  
J
T
= 25˚C  
J
T
J
T
J
= 25˚C  
0.1  
0
2
4
6
1
10  
100  
1000  
10000  
Forward Voltage Drop-VFM (V)  
ReverseVoltage-VR(V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
Fig.1-Typical Forward Voltage Drop Characteristics  
10  
D = 0.50  
D = 0.20  
1
D = 0.10  
P
DM  
D = 0.05  
D = 0.02  
D = 0.01  
t
1
t
2
0.1  
Single Pulse  
(Thermal Resistance)  
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T = P x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Fig.4-MaximumThermal Impedance ZthJC Characteristics  
3
HFA12PA120C  
PD-2.362 rev. C 01/2000  
25  
20  
15  
10  
5
110  
100  
90  
I
I
F
F
= 6 A  
= 4 A  
V
R = 200V  
= 125˚C  
T
J
T
=
25˚C  
J
80  
IF = 6 A  
IF = 4 A  
70  
60  
50  
40  
VR = 200V  
TJ = 125˚C  
TJ  
= 25˚C  
30  
20  
100  
0
100  
1000  
1000  
di /dt- (A/µs)  
f
di /dt- (A/µs)  
f
Fig.5-Typical Reverse Recovery  
Vs. dif/dt  
Fig.6-Typical Recovery Current  
Vs. dif/dt  
10000  
1000  
100  
1000  
800  
600  
400  
200  
0
V
= 200V  
= 125˚C  
= 25˚C  
R
T
J
T
J
I
I
F
F
= 6 A  
= 4 A  
IF = 6 A  
IF = 4 A  
VR = 200V  
TJ = 125˚C  
TJ  
= 25˚C  
10  
100  
1000  
100  
1000  
dif/dt- (A/µs)  
Fig.8-TypicalStoredCharge vs.dif/dt  
dif/dt- (A/µs)  
Fig.7-Typical di(REC) M/dt vs.dif/dt  
4
HFA12PA120C  
PD-2.362 rev. C 01/2000  
R EV ER SE R EC O VE RY CIRCU IT  
V
=
2 0 0 V  
R
0 .0 1  
L
= 7 0 µ H  
D .U .T .  
D
d if/d t  
A D JU S T  
IR F P 2 5 0  
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit  
3
t
rr  
I
F
t
t
a
b
0
4
Q
rr  
2
I
0.5 I  
R R M  
R R M  
5
di(rec )M /dt  
0.75  
I
R R M  
1
d i /d t  
f
1. dif/dt - Rate of change of  
current through zero  
crossing  
4. Qrr - Area under curve  
defined by trr and IRRM  
2. IRRM - Peak reverse  
recovery current  
trr X IRRM  
3. trr - Reverse recovery  
Qrr =  
time measured  
from zero  
2
crossing point of negative  
going IF to point where a line 5. di(rec)M/dt - Peak rate of  
passing through 0.75 IRRM  
and 0.50 IRRM  
change of current during tb  
portion of trr  
extrapolated to zero current  
Fig. 10 - Reverse Recovery Waveform and Definitions  
5
HFA12PA120C  
PD-2.362 rev. C 01/2000  
Outline Table  
3 . 6 5 ( 0 . 14 4 )  
5 . 3 0 ( 0 .2 0 9 )  
4 .7 0 0 .1 8 5)  
1 5 . 90 ( 0 .6 2 6  
1 5 . 30 ( 0 .6 0 2  
)
)
9 ) D IA .  
3 . 55 ( 0 .1 3  
(
2. 5  
1 .5  
(
(
0. 09 8 )  
0 .0 5 9 )  
5 . 7 0 ( 0 . 22 5 )  
5. 30  
( 0 .2 0 8 )  
2 0 .3 0 ( 0 . 80 0  
1 9 .7 0 ( 0 . 77 5  
)
)
5. 50  
( 0 .2 1 7 )  
4 . 5 0 ( 0 .1 7 7 )  
( 2 L C S .)  
P
1
2
3
1 4 . 80 ( 0 . 58 3 )  
4 . 3 0 ( 0 .1 7 0 )  
3 . 7 0 ( 0 . 1 4 5 )  
1 4 . 20 ( 0 . 55 9  
)
2. 2 0 ( 0 .0 8 7)  
2 . 40 ( 0 . 09 5 )  
1 . 4 0 ( 0 .0 5 6 )  
1 . 0 0 ( 0 .0 3 9 )  
M
A X .  
M
A X .  
0 .8 0  
( 0 .0 3 2)  
0. 4 0 ( 0 .2 1 3 )  
10 . 9 4  
( 0 .4 30 )  
10 .8 6 ( 0 .4 27  
)
ConformstoJEDECOutlineTO-247AC  
Dimensions in millimeters and inches  
Ordering Information Table  
DeviceCode  
HF  
A
12 PA 120  
C
5
6
1
2
3
4
1
2
-
-
HexfredFamily  
ProcessDesignator  
A = A subs. elec. irrad.  
B = B subs. Platinum  
3
4
5
6
-
-
-
-
Average Current: Code 12 = 12 AMPS  
Package Outline: Code PA = TO-247 3 Lead  
Voltage code : Code 120 = 1200 V  
Configuration : Code C = Center Tap Common Cathode  
6
HFA12PA120C  
PD-2.362 rev. C 01/2000  
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.  
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.  
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.  
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.  
7

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