HFA15PB60PBF [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | HFA15PB60PBF |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95681A
HFA15PB60PbF
Ultrafast, Soft Recovery Diode
VR = 600V
HEXFREDTM
BASE
CATHODE
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
VF(typ.)* = 1.3V
IF(AV) = 15A
4
Qrr (typ.)= 80nC
IRRM (typ.) = 4.0A
trr(typ.) = 19ns
2
3
1
Benefits
ANODE
2
CATHODE
di(rec)M/dt (typ.)* = 160A/µs
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA15PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
TO-247AC(Modified)
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
600
V
IF @ TC = 100°C
15
IFSM
150
60
A
IFRM
PD @ TC = 25°C
74
W
C
PD @ TC = 100°C
29
TJ
-55 to +150
TSTG
Storage Temperature Range
* 125°C
www.irf.com
1
11/2/04
HFA15PB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
IR = 100µA
1.3 1.7
1.5 2.0
1.2 1.6
IF = 15A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 30A
IF = 15A, TJ = 125°C
VR = VR Rated
1.0
10
IRM
Max Reverse Leakage Current
µA
400 1000
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
25
12
50
pF
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
Reverse Recovery Time
19
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
42
60
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 10
trr2
74 120
4.0 6.0
IF = 15A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 6
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
6.5
10
Reverse Recovery Charge
See Fig. 7
80 180
220 600
188
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
160
See Fig. 8
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead
Lead Temperature
300
1.7
40
°C
R
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
thJC
K/W
thJA
0.25
6.0
CS
th
g
Weight
Wt
0.21
(oz)
6.0
5.0
12
10
Kg-cm
lbfin
Mounting Torque
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
HFA15PB60PbF
100
10
1
10000
1000
100
10
T = 150°C
J
T = 125°C
J
1
0.1
T = 150°C
J
T = 25°C
J
A
0.01
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
A
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ro
Forward Voltage D p - VF ( V )
M
A
10
Fig. 1 - Maximum Forward Voltage Drop
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA15PB60PbF
100
25
20
15
10
5
VR= 200V
TJ = 125°C
TJ = 25°C
I
I
I
= 30A
= 15A
= 5.0A
F
F
F
80
60
40
20
I
I
= 30A
= 15A
F
F
I
= 5.0A
F
VR = 200V
TJ = 125°C
TJ = 25°C
A
A
0
100
0
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery Time vs. dif/dt
10000
800
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
600
I
I
= 30A
= 15A
= 5.0A
F
F
I
I
I
= 30A
= 15A
= 5.0A
F
F
F
I
F
1000
400
200
0
A
A
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
www.irf.com
HFA15PB60PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
0.01
Ω
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
1. dif/dt - Rate of change of current
through zero crossing
4. Qrr - Area under curve defined by trr
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
www.irf.com
5
HFA15PB60PbF
Conforms to JEDEC Outline TO-247AC MODIFIED
Dimensions in millimeters and inches
Note: Marking "P" indicates Lead-Free
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
6
www.irf.com
相关型号：
©2020 ICPDF网 联系我们和版权申明